公开(公告)号：US11227960B2

公开(公告)日：2022-01-18

申请号：US16819686

申请日：2020-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: H01L31/0232 ,  H01L27/144 ,  H01L31/0224

Abstract: One illustrative optical device disclosed herein includes a base layer comprising a semiconductor material and a photodetector-coupler that comprises a detector-coupler element. The device also includes a first diode structure that is positioned in the detector-coupler element and a second diode structure that is positioned in the base layer, wherein the second diode structure is positioned vertically below at least a portion of detector-coupler element.

公开(公告)号：US11215756B2

公开(公告)日：2022-01-04

申请号：US16859347

申请日：2020-04-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen Nummy ,  Kevin K. Dezfulian ,  Bo Peng

IPC: G02B6/122 ,  G02B6/13

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.

公开(公告)号：US20210333474A1

公开(公告)日：2021-10-28

申请号：US16859347

申请日：2020-04-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen Nummy ,  Kevin K. Dezfulian ,  Bo Peng

IPC: G02B6/122 ,  G02B6/13

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core, and a shaped layer is positioned over a portion of the waveguide core. The waveguide core is comprised of a first material, and the shaped layer is comprised of a second material different in composition from the first material. The first material may be, for example, single-crystal silicon, and the second material may be, for example, silicon nitride.

公开(公告)号：US20210288191A1

公开(公告)日：2021-09-16

申请号：US16819686

申请日：2020-03-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: H01L31/0232 ,  H01L31/0224 ,  H01L27/144

Abstract: One illustrative optical device disclosed herein includes a base layer comprising a semiconductor material and a photodetector-coupler that comprises a detector-coupler element. The device also includes a first diode structure that is positioned in the detector-coupler element and a second diode structure that is positioned in the base layer, wherein the second diode structure is positioned vertically below at least a portion of detector-coupler element.

公开(公告)号：US20210278598A1

公开(公告)日：2021-09-09

申请号：US16807942

申请日：2020-03-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/35 ,  G02B6/293 ,  G02B6/42 ,  G02B6/36

Abstract: One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

公开(公告)号：US20210263348A1

公开(公告)日：2021-08-26

申请号：US16799100

申请日：2020-02-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02F1/01

Abstract: Structures for a polarization switch and methods of fabricating a structure for a polarization switch. A waveguide core is located on a substrate. The waveguide core is composed of silicon nitride. An active layer is positioned proximate to a section of the waveguide core. The active layer composed of a phase change material having a first state with a first refractive index and a second state with a second refractive index.

公开(公告)号：US20210202778A1

公开(公告)日：2021-07-01

申请号：US16727321

申请日：2019-12-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: H01L31/107 ,  H01L31/028 ,  H01L31/18

Abstract: One illustrative photodiode disclosed herein includes an N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.

公开(公告)号：US20210202764A1

公开(公告)日：2021-07-01

申请号：US16729930

申请日：2019-12-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

Abstract: One illustrative photodiode disclosed herein includes an N-doped anode region, an N-doped impact ionization region positioned above the N-doped anode region and at least one P-doped charge region positioned above the N-doped impact ionization region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and a P-doped cathode region positioned above the at least one P-doped charge region.

公开(公告)号：US20210199887A1

公开(公告)日：2021-07-01

申请号：US16727400

申请日：2019-12-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/126 ,  G02B6/122 ,  G02B6/13

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A first waveguide core includes a section and a taper connected to the section. A second waveguide core is laterally positioned adjacent to the taper of the first waveguide core. An absorber is connected to the section of the first waveguide core. The absorber is composed of germanium.

公开(公告)号：US20210109283A1

公开(公告)日：2021-04-15

申请号：US16597323

申请日：2019-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Colleen Meagher ,  Karen Nummy ,  Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/122 ,  G02B6/136

Abstract: Structures including a waveguide core and methods of fabricating a structure that includes a waveguide core. A dielectric layer including a trench with a first sidewall and a second sidewall, and a waveguide core positioned inside the trench between the first and second sidewalls of the trench. The waveguide core has a first width, and the trench has a second width between the first and second sidewalls that is greater than the first width.