公开(公告)号：US20090323228A1

公开(公告)日：2009-12-31

申请号：US12553864

申请日：2009-09-03

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909

摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.

摘要翻译： 隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。 铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。 铁磁底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。 铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

公开(公告)号：US07502206B2

公开(公告)日：2009-03-10

申请号：US11492375

申请日：2006-07-24

申请人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

发明人： Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero ,  Bruce Alexander Wilson

IPC分类号： G11B5/33

CPC分类号： G11B5/3948 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR sensor that is capable of reading two separate tracks of data simultaneously. The EMR sensor has a semiconductor structure with an electrically conductive shunt structure at one side. The other side of the semiconductor structure is connected with a pair of current leads. Each of the current leads is disposed between a pair of voltage leads. Each pair of voltage leads is capable of independently reading a magnetic signal by measuring the voltage potential change across the pair of voltage leads. The EMR structure minimizes the number of leads needed to read two magnetic signals by using a single pair of current leads to read two tracks of data.

摘要翻译： 一个非凡的磁阻器件EMR传感器，能够同时读取两个独立的数据轨迹。 EMR传感器具有在一侧具有导电分流结构的半导体结构。 半导体结构的另一侧与一对电流引线连接。 每个电流引线设置在一对电压引线之间。 每对电压引线可以通过测量一对电压引线上的电压电位变化来独立读取磁信号。 EMR结构通过使用单对电流引线读取两个数据轨迹来最小化读取两个磁信号所需的引线数量。

公开(公告)号：US07436634B2

公开(公告)日：2008-10-14

申请号：US11615840

申请日：2006-12-22

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC分类号： G11B5/10 ,  G11B5/39

CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magnetic shield for use in a magnetic head. The magnetic shield has a magnetic anisotropy associated with a magnetic easy axis of magnetization oriented substantially parallel with the air bearing surface. The magnetic anisotropy of the shield is induced by an anisotropic surface texture. This anisotropic surface texture can be formed in a surface of one or more magnetic layers of the shield, or can be formed in a surface of an under-layer on which the shield is deposited. The shield could also be constructed as a lamination of magnetic layers separated by non-magnetic layers, with the anisotropic surface texture being formed on one or more of the non-magnetic layers.

摘要翻译： 用于磁头的磁屏蔽。 磁屏蔽具有与磁性易磁化轴相关联的磁各向异性，该磁性易磁化轴基本上平行于空气轴承表面定向。 屏蔽的磁各向异性由各向异性表面纹理引起。 这种各向异性表面纹理可以形成在屏蔽的一个或多个磁性层的表面中，或者可以形成在其上沉积有屏蔽层的下层的表面中。 屏蔽也可以被构造为由非磁性层分离的磁性层的叠层，各向异性表面纹理形成在一个或多个非磁性层上。

公开(公告)号：US07382586B2

公开(公告)日：2008-06-03

申请号：US11177990

申请日：2005-07-07

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

IPC分类号： G11B5/39

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

公开(公告)号：US07382580B2

公开(公告)日：2008-06-03

申请号：US11144243

申请日：2005-06-04

申请人： Stefan Maat

发明人： Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G11B5/105 ,  B82Y10/00 ,  G11B5/127 ,  G11B5/314 ,  G11B5/54 ,  G11B5/58 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021 ,  H05B3/12

摘要： An electrically resistive heater is formed of a chemically disordered CrxV100-x alloy. The alloy exhibits a high temperature coefficient of resistance (TCR) so that the heater temperature can be inferred from its resistance, minimal resistance vs. temperature hysteresis upon heating and cooling, a high melting point, and temporal stability of resistance at elevated temperatures. The resistive heater is used in data storage systems, including magnetic recording hard disk drives that uses heaters to thermally assist the recording or induce protrusion of the write head pole tips to reduce the head-disk spacing, and atomic force microscopy (AFM) based systems that use “nanoheaters” on cantilever tips for either thermally-assisted recording on magnetic media or thermo-mechanical recording on polymer-based media.

摘要翻译： 电阻加热器由化学无序的Cr x 100> x合金形成。 该合金表现出高的电阻温度系数（T CR），使得加热器温度可以从其电阻，加热和冷却时的最小电阻对温度滞后，高熔点和时间推断 在高温下的电阻稳定性。 电阻加热器用于数据存储系统，包括磁记录硬盘驱动器，其使用加热器热辅助记录或引起写入磁头尖端的突出以减小磁头 - 磁盘间距，以及基于原子力显微镜（AFM）的系统 在磁性介质上进行热辅助记录或在基于聚合物的介质上进行热机械记录的悬臂尖上使用“纳米级”。

公开(公告)号：US20080100964A1

公开(公告)日：2008-05-01

申请号：US11553215

申请日：2006-10-26

申请人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

发明人： Eric Edward Fullerton ,  Stefan Maat ,  Ian Robson McFadyen ,  Jan-Ulrich Thiele

IPC分类号： G11B5/82 ,  G11B5/65

CPC分类号： G11B5/64 ,  G11B5/1278 ,  G11B5/3103

摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.

摘要翻译： 磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。 因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。 在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H

公开(公告)号：US07298597B2

公开(公告)日：2007-11-20

申请号：US11093342

申请日：2005-03-29

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Stefan Maat

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3932 ,  H01L43/08

摘要： A magnetoresistive sensor based on the spin accumulation effect has an in-stack biasing structure with a ferromagnetic biasing layer that is magnetically-coupled orthogonally with the sensor free ferromagnetic layer across a spacer layer. The sensor has an electrically conductive strip with a first tunnel barrier and a free ferromagnetic layer on the front or sensing end of the strip and second tunnel barrier and a fixed ferromagnetic layer on the back end of the strip. A magnetically-coupling spacer layer is formed on the free layer and the ferromagnetic biasing layer is formed on the spacer layer. The magnetically-coupling layer induces direct orthogonal magnetic coupling between the in-plane magnetization directions of the biasing layer and the free layer.

摘要翻译： 基于自旋累积效应的磁阻传感器具有堆叠偏置结构，其中铁磁偏置层与穿过间隔层的传感器自由铁磁层正交地磁耦合。 传感器具有导电条带，其具有第一隧道势垒和在条带的前部或感测端上的自由铁磁层和第二隧道势垒以及带的后端上的固定铁磁层。 在自由层上形成磁耦合间隔层，并且在间隔层上形成铁磁偏置层。 磁耦合层在偏置层的面内磁化方向和自由层之间引起直接正交磁耦合。

公开(公告)号：US07295406B2

公开(公告)日：2007-11-13

申请号：US10897454

申请日：2004-07-22

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39

CPC分类号： G11C11/14 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/3993 ,  G11B5/4853

摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.

摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。

公开(公告)号：US20070247763A1

公开(公告)日：2007-10-25

申请号：US11411606

申请日：2006-04-25

申请人： Thomas Boone ,  Liesl Folks ,  Stefan Maat

发明人： Thomas Boone ,  Liesl Folks ,  Stefan Maat

IPC分类号： G11B5/33

CPC分类号： G11B5/3993 ,  G11B2005/0016 ,  G11C11/14

摘要： An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

摘要翻译： 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。 异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

公开(公告)号：US07203036B2

公开(公告)日：2007-04-10

申请号：US10909122

申请日：2004-07-30

申请人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

发明人： Amitava Chattopadhyay ,  Robert E. Fontana, Jr. ,  Bruce A. Gurney ,  Stefan Maat ,  Ernesto E. Marinero

IPC分类号： G11B5/39 ,  G01R33/02 ,  G01R27/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G01R33/095

摘要： An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

摘要翻译： 非常大的磁阻（EMR）传感器具有平面分流和平面引线，形成在传感器的顶部并向下延伸到半导体有源区域中。 诸如Au或AuGe的导电材料首先沉积在传感器顶部的光刻定义的窗口中。 在光致抗蚀剂剥离之后，快速热退火工艺使得导电材料向下扩散到半导体材料中并与活性区电接触。 传感器的轮廓由反应性蚀刻或其他合适的蚀刻技术限定。 沉积诸如Al氧化物的回填材料的绝缘以保护EMR传感器和有源区域的边缘。 结构的化学机械抛光导致没有暴露的有源区边缘的平面传感器。