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    Display device
    101.
    发明授权
    Display device 有权

    公开(公告)号：US10395593B2

    公开(公告)日：2019-08-27

    申请号：US15869724

    申请日：2018-01-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei Toyotaka

    IPC: G09G3/20 ,  G09G3/3233

    Abstract: A display device includes a plurality of pulse output circuits each of which outputs signals to one of the two kinds of scan lines and a plurality of inverted pulse output circuits each of which outputs, to the other of the two kinds of scan lines, inverted or substantially inverted signals of the signals output from the pulse output circuits. Each of the plurality of inverted pulse output circuits operates with at least two kinds of signals used for the operation of the plurality of pulse output circuits. Thus, through current generated in the inverted pulse output circuits can be reduced.

    Semiconductor device
    102.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10256255B2

    公开(公告)日：2019-04-09

    申请号：US15239006

    申请日：2016-08-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

    IPC: G11C19/00 ,  H01L27/12 ,  G11C19/28 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/36 ,  H01L29/786 ,  G09G3/3266 ,  G09G3/3275

    Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

    DISPLAY DEVICE
    105.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20180137822A1

    公开(公告)日：2018-05-17

    申请号：US15869724

    申请日：2018-01-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei Toyotaka

    IPC: G09G3/3233 ,  G09G3/20

    CPC classification number: G09G3/3233 ,  G09G3/20 ,  G09G2300/0809 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021

    Abstract: A display device includes a plurality of pulse output circuits each of which outputs signals to one of the two kinds of scan lines and a plurality of inverted pulse output circuits each of which outputs, to the other of the two kinds of scan lines, inverted or substantially inverted signals of the signals output from the pulse output circuits. Each of the plurality of inverted pulse output circuits operates with at least two kinds of signals used for the operation of the plurality of pulse output circuits. Thus, through current generated in the inverted pulse output circuits can be reduced.

    Semiconductor device, driver circuit, and display device
    106.
    发明授权
    Semiconductor device, driver circuit, and display device 有权
    半导体器件，驱动器电路和显示器件

    公开(公告)号：US09553205B2

    公开(公告)日：2017-01-24

    申请号：US15147168

    申请日：2016-05-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kouhei Toyotaka

    IPC: G09G3/36 ,  G11C19/28 ,  H01L29/786 ,  H01L27/12

    CPC classification number: G11C19/28 ,  G02F1/136277 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/0297 ,  H01L27/1225 ,  H01L29/7869

    Abstract: To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.

    Abstract translation: 提供具有高孔径比的半导体器件，并且包括具有高电荷电容的电容器。 提供具有窄边框的半导体器件。 衬底上的晶体管; 在其上提供晶体管的栅电极的表面上的第一导电膜; 在其上提供晶体管的一对电极的表面上的第二导电膜; 并且包括与第一导电膜和第二导电膜电连接的第一透光性导电膜。 第二导电膜与第二导电膜和第一导电膜之间的晶体管的栅极绝缘膜与第一导电膜重叠。

    Semiconductor circuit having switching element, capacitor and operational amplifier circuit
    110.
    发明授权
    Semiconductor circuit having switching element, capacitor and operational amplifier circuit 有权
    具有开关元件，电容器和运算放大器电路的半导体电路

    公开(公告)号：US09160291B2

    公开(公告)日：2015-10-13

    申请号：US14454791

    申请日：2014-08-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kouhei Toyotaka

    IPC: G11C27/02 ,  G06F7/64 ,  H03F3/45 ,  H03F3/00

    CPC classification number: H03F3/45071 ,  H03F3/005 ,  H03F3/45 ,  H03F3/45475 ,  H03F2203/45551

    Abstract: A semiconductor circuit which can have stable input output characteristics is provided. Specifically, a semiconductor circuit in which problems caused by the leakage current of a switching element are suppressed is provided. A field-effect transistor in which a wide band gap semiconductor, such as an oxide semiconductor, is used in a semiconductor layer where a channel is formed is used for a switching element included in a switched capacitor circuit. Such a transistor has a small leakage current in an off state. When the transistor is used as a switching element, a semiconductor circuit which has stable input output characteristics and in which problems caused by the leakage current are suppressed can be fabricated.

    Abstract translation: 提供了可以具有稳定的输入输出特性的半导体电路。 具体地说，提供了抑制由开关元件的漏电流引起的问题的半导体电路。 在形成沟道的半导体层中使用诸如氧化物半导体的宽带隙半导体的场效应晶体管用于开关电容电路中所包含的开关元件。 这种晶体管在断开状态下具有小的漏电流。 当晶体管用作开关元件时，可以制造出具有稳定的输入输出特性并且由漏电流引起的问题被抑制的半导体电路。

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