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133 条记录 (耗时 0.031 秒)

    Magnetic recording-reproducing apparatus
    102.
    发明授权
    Magnetic recording-reproducing apparatus 有权
    磁记录再现装置

    公开(公告)号：US07054087B2

    公开(公告)日：2006-05-30

    申请号：US10944882

    申请日：2004-09-21

    申请人： Tadashi Kai ,  Akira Kikitsu ,  Toshihiko Nagase ,  Tomoyuki Maeda ,  Junichi Akiyama

    发明人： Tadashi Kai ,  Akira Kikitsu ,  Toshihiko Nagase ,  Tomoyuki Maeda ,  Junichi Akiyama

    IPC分类号： G11B5/02 ,  G11B5/66

    CPC分类号： G11B5/7325 ,  G11B5/00 ,  G11B5/012 ,  G11B5/127 ,  G11B5/64 ,  G11B13/045 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021

    摘要： A magnetic recording-reproducing apparatus has a magnetic recording medium having a nonmagnetic substrate, and a functional layer and a recording layer formed on the nonmagnetic substrate, the recording layer exhibiting a magnetic anisotropy energy density KuRL, the functional layer developing ferromagnetism upon irradiation with light so as to exhibit a magnetic anisotropy energy density KuFL lower than the magnetic anisotropy energy density KuRL and the functional layer serving to lower the magnetic anisotropy energy density of the recording layer through exchange coupling interaction with the recording layer when the functional layer is irradiated with light, a light source which irradiates the functional layer with light, and a magnetic head having a writing head writing signal magnetization by applying a magnetic field to the recording layer and a reading head reading the signal magnetization recorded in the recording layer.

    摘要翻译： 磁记录再现装置具有磁记录介质，其具有非磁性基板，以及在非磁性基板上形成的功能层和记录层，所述记录层呈现磁各向异性能量密度Ku <！ - SIPO 的功能层，而功能层用于降低 当功能层被光照射时通过与记录层的交换耦合相互作用的记录层的磁各向异性能量密度，用光照射功能层的光源以及具有写入头写入信号磁化的磁头通过施加 记录层的磁场和读取记录在记录层中的信号磁化的读取头。

    Iron sulfide and process for producing the same
    105.
    发明授权
    Iron sulfide and process for producing the same 失效
    硫化铁及其制造方法

    公开(公告)号：US6056935A

    公开(公告)日：2000-05-02

    申请号：US952591

    申请日：1997-11-24

    申请人： Tadashi Kai ,  Yuji Matsue ,  Masaaki Sakurai ,  Kunihiro Imada ,  Kenji Inokuchi

    发明人： Tadashi Kai ,  Yuji Matsue ,  Masaaki Sakurai ,  Kunihiro Imada ,  Kenji Inokuchi

    IPC分类号： B01J27/043 ,  C01G49/12 ,  C10G1/08

    CPC分类号： B01J27/043 ,  C01G49/12 ,  C10G1/086

    摘要： The invention provides an iron sulfide characterized in that it comprises FeS.sub.2, Fe.sub.1-x S, Fe.sub.3 O.sub.4 and FeSO.sub.4, and that the secondary particles thereof, have a 50% volume-cumulative particle diameter of from 20 to 300 .mu.m. The invention also provides a process for producing an iron sulfide comprising the steps of introducing (a) ferrous sulfate monohydrate having a d.sub.50 of from 20 to 300 .mu.m and (b) not less than stoichiometric amount of at least one sulfur compound selected from elemental sulfur and hydrogen sulfide into the fluidized bed of a furnace and then fluidizing, burning, and reacting the ingredients at a temperature of from 350 to less than 630.degree. C., a superficial velocity of 0.1 m/sec or higher, and a pressure of 1 atm or higher using air as a fluidizing gas.

    摘要翻译： PCT No.PCT / JP96 / 01395 Sec。 371日期：1997年11月24日 102（e）日期1997年11月24日PCT提交1996年5月24日PCT公布。 公开号WO96 / 37296 日期：1996年11月28日本发明提供一种硫化铁，其特征在于，其包含FeS 2，Fe 1-xS，Fe 3 O 4和FeSO 4，并且其二次粒子具有20〜300μm的体积累积粒径的50％。 本发明还提供一种生产硫化铁的方法，包括以下步骤：（a）d50为20-300μm的硫酸亚铁一水合物，和（b）不少于化学计量的至少一种选自元素的硫化合物 硫和硫化氢进入炉的流化床，然后在350至小于630℃，表面速度为0.1m / sec或更高的温度下流化，燃烧和反应成分，压力为 1大气压或更高，使用空气作为流化气体。

    Electronic device
    106.
    发明授权
    Electronic device 有权

    公开(公告)号：US09720828B2

    公开(公告)日：2017-08-01

    申请号：US14562443

    申请日：2014-12-05

    申请人： Sung-Joon Yoon ,  Tadashi Kai

    发明人： Sung-Joon Yoon ,  Tadashi Kai

    IPC分类号： H01L43/08 ,  G06F12/08 ,  H01L27/22

    CPC分类号： G06F12/08 ,  G11C11/161 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

    摘要： An electronic device includes a first magnetic layer pinned in its magnetization direction, a third magnetic layer pinned in its magnetization direction, a second magnetic layer interposed between the first magnetic layer and the third magnetic layer, and changeable in its magnetization direction, a barrier layer interposed between the first magnetic layer and the second magnetic layer, and a dielectric layer interposed between the second magnetic layer and the third magnetic layer, wherein the first magnetic layer has a width 1.5 to 5 times wider than a width of the second magnetic layer.

    Magnetoresistive memory device and manufacturing method of the same
    107.
    发明授权
    Magnetoresistive memory device and manufacturing method of the same 有权
    磁阻存储器件及其制造方法相同

    公开(公告)号：US09590174B2

    公开(公告)日：2017-03-07

    申请号：US14629120

    申请日：2015-02-23

    申请人： Masaru Toko ,  Kuniaki Sugiura ,  Yutaka Hashimoto ,  Katsuya Nishiyama ,  Tadashi Kai

    发明人： Masaru Toko ,  Kuniaki Sugiura ,  Yutaka Hashimoto ,  Katsuya Nishiyama ,  Tadashi Kai

    IPC分类号： H01L21/02 ,  H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    摘要： According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

    摘要翻译： 根据一个实施例，磁阻存储器件的制造方法包括在衬底上形成第一磁性层，在第一磁性层上形成磁阻效应元件，在磁阻效应元件的一部分上形成掩模，选择性地蚀刻磁阻 使用该掩模，在通过蚀刻暴露的磁阻效应元件的侧壁上形成侧壁绝缘膜，使用掩模和侧壁绝缘膜选择性地蚀刻第一磁性层，并在侧壁上形成含有磁性材料的沉积层 的第一磁性层和侧壁绝缘膜，并将离子引入沉积层。

    Magnetoresistive element and magnetic memory using the same
    108.
    发明授权
    Magnetoresistive element and magnetic memory using the same 有权
    磁阻元件和使用其的磁存储器

    公开(公告)号：US08659103B2

    公开(公告)日：2014-02-25

    申请号：US13424136

    申请日：2012-03-19

    申请人： Daisuke Watanabe ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Koji Ueda ,  Tadashi Kai

    发明人： Daisuke Watanabe ,  Katsuya Nishiyama ,  Toshihiko Nagase ,  Koji Ueda ,  Tadashi Kai

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.

    摘要翻译： 根据一个实施例，磁阻元件包括以下构造。 第一磁性层具有不变的磁化。 第二磁性层具有可变磁化强度。 在第一和第二磁性层之间提供非磁性层。 第一磁性层具有堆叠第一，第二和第三磁性材料膜和非磁性材料膜的结构。 第一磁性材料膜设置成与非磁性层接触，非磁性材料膜设置成与第一磁性材料膜接触，第二磁性材料膜设置成与非磁性材料膜接触，并且第三磁性材料膜 设置成与第二磁性材料膜接触。 第二磁性材料膜的Co浓度高于第一磁性材料膜。