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126 条记录 (耗时 0.038 秒)

    Nonvolatile memory device and method for fabricating the same
    101.
    发明授权
    Nonvolatile memory device and method for fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08928059B2

    公开(公告)日：2015-01-06

    申请号：US13605213

    申请日：2012-09-06

    申请人： Sung-Jin Whang ,  Dong-Sun Sheen ,  Seung-Ho Pyi ,  Min-Soo Kim

    发明人： Sung-Jin Whang ,  Dong-Sun Sheen ,  Seung-Ho Pyi ,  Min-Soo Kim

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11556 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/7889

    摘要： A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes alternately formed along the channel layer; floating gate electrodes interposed between the tunnel dielectric layer and the plurality of control gate electrodes, the floating gate electrodes comprising a metal-semiconductor compound; and a charge blocking layer interposed between each of the plurality of control gate electrodes and each of the plurality of floating gate electrodes.

    摘要翻译： 非易失性存储器件包括：衬底; 从所述基板的表面在垂直于所述表面的方向上突出的沟道层; 围绕所述沟道层的隧道介电层; 多个层间电介质层和沿沟道层交替形成的多个控制栅电极; 插入在隧道介电层和多个控制栅电极之间的浮置栅电极，浮置栅电极包括金属 - 半导体化合物; 以及插入在所述多个控制栅极电极和所述多个浮栅电极中的每一个之间的电荷阻挡层。

    Nonvolatile memory device and method for fabricating the same
    102.
    发明授权
    Nonvolatile memory device and method for fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08860119B2

    公开(公告)日：2014-10-14

    申请号：US13604073

    申请日：2012-09-05

    申请人： Min-Soo Kim ,  Dong-Sun Sheen ,  Seung-Ho Pyi ,  Sung-Jin Whang

    发明人： Min-Soo Kim ,  Dong-Sun Sheen ,  Seung-Ho Pyi ,  Sung-Jin Whang

    IPC分类号： H01L29/78 ,  H01L21/283

    CPC分类号： H01L27/11582

    摘要： A nonvolatile memory device includes a substrate including a surface, a channel layer formed on the surface of the substrate, which protrudes perpendicularly from the surface, and a plurality of interlayer dielectric layers and a plurality of gate electrode layers alternately stacked along the channel layer, wherein the plurality of gate electrode layers protrude from the plurality of interlayer dielectric layers.

    摘要翻译： 非易失性存储器件包括：衬底，其包括表面，形成在所述衬底的表面上的从所述表面垂直突出的沟道层，以及沿所述沟道层交替堆叠的多个层间电介质层和多个栅极电极层， 其中所述多个栅极电极层从所述多个层间电介质层突出。

    Aromatic ring-containing compound for a resist underlayer and resist underlayer composition
    104.
    发明授权
    Aromatic ring-containing compound for a resist underlayer and resist underlayer composition 有权
    用于抗蚀剂底层和抗蚀剂下层组合物的芳香族环化合物

    公开(公告)号：US08637219B2

    公开(公告)日：2014-01-28

    申请号：US12980584

    申请日：2010-12-29

    申请人： Sung-Wook Cho ,  Hwan-Sung Cheon ,  Min-Soo Kim ,  Seung-Bae Oh ,  Jee-Yun Song

    发明人： Sung-Wook Cho ,  Hwan-Sung Cheon ,  Min-Soo Kim ,  Seung-Bae Oh ,  Jee-Yun Song

    IPC分类号： G03F7/004 ,  C07C13/24

    CPC分类号： C07C33/26 ,  C07C33/36 ,  C07C2601/14 ,  C07C2603/54 ,  G03F7/091

    摘要： An aromatic ring-containing compound for a resist underlayer and a resist underlayer composition, the aromatic ring-containing compound being represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, R1 to R6 are each independently a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C5 to C20 aromatic ring group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C3 to C20 cycloalkenyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, or a substituted or unsubstituted C2 to C20 heterocycloalkyl group, X1 to X6 are each independently hydrogen, a hydroxy group (—OH), a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted alkoxy group, or an amino group (—NH2), n1 to n6 are each independently 0 or 1, and 1≦n1+n2+n3+n4+n5+n6≦6.

    摘要翻译： 用于抗蚀剂底层的芳香族含环化合物和抗蚀剂下层组合物，所述含芳环的化合物由以下化学式1表示：其中，在化学式1中，R 1〜R 6各自独立地为取代或未取代的C1〜 取代或未取代的C 3至C 20芳环，取代或未取代的C 3至C 20环烷基，取代或未取代的C 3至C 20环烯基，取代或未取代的C 2至C 20杂芳基，或取代或未取代的 C2〜C20杂环烷基，X1〜X6各自独立地为氢，羟基（-OH），取代或未取代的烷基胺基，取代或未取代的烷氧基或氨基（-NH2），n1〜n6分别为 各自独立地为0或1，以及1 @ n1 + n2 + n3 + n4 + n5 + n6 @ 6。

    Mobile terminal
    107.
    发明授权
    Mobile terminal 有权
    移动终端

    公开(公告)号：US08456847B2

    公开(公告)日：2013-06-04

    申请号：US12491028

    申请日：2009-06-24

    申请人： Yong-Jin Hwang ,  Min-Soo Kim ,  Won-Seok Joo

    发明人： Yong-Jin Hwang ,  Min-Soo Kim ,  Won-Seok Joo

    IPC分类号： H05K5/00 ,  H04M1/00

    CPC分类号： H04M1/0254 ,  G06F1/1615 ,  G06F1/1626 ,  G06F1/1658 ,  G06F1/1686 ,  H04M1/0249 ,  H04M1/0264 ,  H04M1/03 ,  H04M1/236 ,  H04M2250/22 ,  H04M2250/52

    摘要： A mobile terminal includes: a display unit that displays information; and a frame that fixedly surrounds the display unit and is fixed to a terminal case, wherein the frame includes at least one supplementary module mounting unit allowing a supplementary module that performs a different function from that of the display unit to be integrally mounted thereon. A supplementary module different from the display unit is integrally mounted on a frame constituting a display assembly, so handling and assembling can be facilitated and production cost can be reduced.

    摘要翻译： 移动终端包括：显示单元，显示信息; 以及固定在所述显示单元上并固定到终端壳体的框架，其中所述框架包括至少一个辅助模块安装单元，其允许执行与所述显示单元的功能不同的功能的辅助模块整体地安装在所述辅助模块安装单元上。 与显示单元不同的辅助模块一体地安装在构成显示组件的框架上，因此可以方便处理和组装，并且可以降低生产成本。

    NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    108.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20120170368A1

    公开(公告)日：2012-07-05

    申请号：US13308972

    申请日：2011-12-01

    申请人： Ki-Hong Lee ,  Kwon Hong ,  Min-Soo Kim

    发明人： Ki-Hong Lee ,  Kwon Hong ,  Min-Soo Kim

    IPC分类号： G11C16/04

    CPC分类号： H01L27/11565 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/7926

    摘要： Provided are a nonvolatile memory device and a method for fabricating the same, which can secure the structural stability of a three-dimensional nonvolatile memory device. The nonvolatile memory device includes one or more columnar channel plugs, a plurality of word lines and a plurality of dielectric layers stacked alternately to surround the columnar channel plug, a memory layer disposed between the word line and the columnar channel plug, a plurality of word line connection portions, each of the word line connection portions connecting ends of word lines of a common layer from among the plurality of word lines, and a plurality of word line extension portions extending from the word line connection portions.

    摘要翻译： 提供一种非易失性存储器件及其制造方法，其可以确保三维非易失性存储器件的结构稳定性。 非易失性存储装置包括一个或多个柱状通道插头，多个字线和多个电介质层，交替堆叠以包围柱状通道插头，设置在字线和柱状通道插头之间的存储层，多个字 每个字线连接部分从多个字线中连接公共层的字线的端部，以及从字线连接部分延伸的多个字线延伸部分。