Display pixel structure and display apparatus
    101.
    发明授权
    Display pixel structure and display apparatus 有权
    显示像素结构和显示装置

    公开(公告)号:US07923915B2

    公开(公告)日:2011-04-12

    申请号:US11958393

    申请日:2007-12-18

    Abstract: A pixel structure of display apparatus includes a first substrate and a second substrate. Several cathode structure layers are disposed on the first substrate. The second substrate is a light-transmissive material. Several anode structure layers are disposed on the second substrate, and are light-transmissive conductive materials. The first substrate faces to the second substrate, so that the cathode structure layers are respectively aligned with the anode structure layers. A separation structure is disposed between the first substrate and the second substrate, for respective partitioning the anode structure layers and the cathode structure layers to form several spaces. Several fluorescent layers are respectively disposed between the anode structure layers and the cathode structure layers. A low-pressure gas is respectively filled into the spaces. The low-pressure gas has an electron mean free path, allowing at least sufficient amount of electrons to directly impinge the fluorescent layer under an operation voltage.

    Abstract translation: 显示装置的像素结构包括第一基板和第二基板。 多个阴极结构层设置在第一基板上。 第二基板是透光材料。 多个阳极结构层设置在第二基板上,并且是透光导电材料。 第一衬底面向第二衬底,使得阴极结构层分别与阳极结构层对准。 分离结构设置在第一基板和第二基板之间,用于相应地分隔阳极结构层和阴极结构层以形成几个空间。 阳极结构层和阴极结构层之间分别设置有几个荧光层。 低压气体分别装入空间。 低压气体具有电子平均自由程,允许至少足够量的电子在操作电压下直接冲击荧光层。

    Plasma Producing Device Comprising Magnesium Oxide Microparticles Having Specific Cathodoluminescence Characteristics
    102.
    发明申请
    Plasma Producing Device Comprising Magnesium Oxide Microparticles Having Specific Cathodoluminescence Characteristics 审中-公开
    包含具有特定阴极发光特性的氧化镁微粒的等离子体生产装置

    公开(公告)号:US20080309238A1

    公开(公告)日:2008-12-18

    申请号:US12024407

    申请日:2008-02-01

    CPC classification number: H01J11/40 H01J11/12 H01J2201/32

    Abstract: A plasma producing device of the present invention comprising magnesium oxide (MgO) microparticles whose cathodoluminescence emission shows no peak at around a wavelength of 300 nm or less, but exhibits a peak at a wavelength in the range of 350 to 500 nm as well as at least one peak at wavelengths in the ranges of 550 to 650 nm and 700 to 800 nm upon excitation by an electron beam exhibits improved discharge characteristics.

    Abstract translation: 本发明的等离子体制造装置,其包含氧化镁(MgO)微粒,其阴极发光发射在波长在300nm以下的波长附近不表现出峰值,但在350〜500nm的范围内呈现峰值, 在通过电子束激发时在550至650nm和700至800nm范围内的波长处的至少一个峰表现出改进的放电特性。

    Magnetron with diamond coated cathode
    104.
    发明申请
    Magnetron with diamond coated cathode 有权
    带金刚石涂层阴极的磁控管

    公开(公告)号:US20020125827A1

    公开(公告)日:2002-09-12

    申请号:US09802585

    申请日:2001-03-08

    CPC classification number: H01J23/05 H01J2201/30457 H01J2201/32

    Abstract: A radio frequency magnetron device for generating radio frequency power includes a cathode at least partially formed from a diamond material. An anode is disposed concentrically around the cathode. An electron field is provided radially between the anode and the cathode. First and second oppositely charged pole pieces are operatively connected to the cathode for producing a magnetic field in a direction perpendicular to the electric field. A filament is provided within the electron tube which when heated produces primary electrons. Alternatively, a voltage is applied to the anode which causes primary electrons to emit from the diamond coated cathode. A portion of the primary electrons travel in a circular path and induce radio frequency power. Another portion of the primary electrons spiral back and collide with the cathode causing the emission of secondary electrons. The secondary electron emission sustains operation of the magnetron device once the device has been started.

    Abstract translation: 用于产生射频功率的射频磁控管装置包括至少部分由金刚石材料形成的阴极。 阳极围绕阴极同心地设置。 在阳极和阴极之间径向设置电子场。 第一和第二相对带电的极片可操作地连接到阴极,以在垂直于电场的方向上产生磁场。 在电子管内提供一根灯丝,当加热时产生一次电子。 或者,向阳极施加电压,其使一次电子从金刚石涂覆的阴极发射。 一部分一次电子以圆形路径行进并且感应射频功率。 一次电子的另一部分螺旋回来并与阴极碰撞引起二次电子的发射。 一旦装置启动,二次电子发射就能维持磁控管装置的操作。

    Luminescent display device with protective barrier layer
    105.
    发明授权
    Luminescent display device with protective barrier layer 有权
    具有保护屏障层的发光显示装置

    公开(公告)号:US6111353A

    公开(公告)日:2000-08-29

    申请号:US311083

    申请日:1999-05-13

    Inventor: John L. Janning

    Abstract: Cathodoluminescent field emission display devices feature phosphor biasing, amplification material layers for secondary electron emissions, oxide secondary emission enhancement layers, and ion barrier layers of silicon nitride, to provide high-efficiency, high-brightness field emission displays with improved operating characteristics and durability. The amplification materials include copper-barium, copper-beryllium, gold-barium, gold-calcium, silver-magnesium and tungsten-barium-gold, and other high amplification factor materials fashioned to produce high-level secondary electron emissions within a field emission display device. For enhanced secondary electron emissions, an amplification material layer can be coated with a near mono-molecular film consisting essentially of an oxide of barium, beryllium, calcium, magnesium or strontium. Use of a high amplification factor film as a phosphor biasing electrode, and variability of the phosphor biasing potential to achieve brightness or gray scale control are further described in the disclosure.

    Abstract translation: 阴极发光场致发射显示装置具有荧光偏置,用于二次电子发射的放大材料层,氧化物二次发射增强层和氮化硅的离子阻挡层,以提供具有改进的操作特性和耐久性的高效率,高亮度场致发射显示器。 扩增材料包括铜 - 钡,铜 - 铍,金 - 钡,金 - 钙,银 - 镁和钨 - 钡 - 金,以及其他高放大因子材料,用于在场发射显示器内产生高级二次电子发射 设备。 对于增强的二次电子发射,可以用基本上由钡,铍,钙,镁或锶的氧化物组成的近单分子膜涂覆扩增材料层。 在本公开中进一步描述了使用高放大因子膜作为荧光体偏置电极,以及荧光体偏置电位的变化以实现亮度或灰度级控制。

    Method for fabrication of discrete dynode electron multipliers
    106.
    发明授权
    Method for fabrication of discrete dynode electron multipliers 失效
    离散倍增电子倍增器的制造方法

    公开(公告)号:US5618217A

    公开(公告)日:1997-04-08

    申请号:US506611

    申请日:1995-07-25

    CPC classification number: H01J9/125 H01J2201/32

    Abstract: A method for manufacturing a discrete dynode electron multiplier includes employing micromachining and thin film techniques to produce tapered apertures in an etchable substrate, bonding the substrates together and activating the internal surfaces of the etched substrate using chemical vapor deposition or oxidizing and nitriding techniques.

    Abstract translation: 用于制造分立倍增电子倍增器的方法包括采用微加工和薄膜技术在可蚀刻衬底中产生锥形孔,将衬底粘合在一起并使用化学气相沉积或氧化和氮化技术激活蚀刻衬底的内表面。

    Thin film continuous dynodes for electron multiplication
    108.
    发明授权
    Thin film continuous dynodes for electron multiplication 失效
    用于电子倍增的薄膜连续倍增极

    公开(公告)号:US5378960A

    公开(公告)日:1995-01-03

    申请号:US089771

    申请日:1993-07-12

    Abstract: A continuous thin film dynode includes a substrate with at least one channel having a channel wall, an isolation layer overlying the channel wall, and a thin film overlying the isolation layer. The thin film includes a current carrying portion and an electron emissive portion overlying the current carrying portion. The electron emissive portion is essentially free of a material which is silica-rich, alkali-rich, and lead-poor. The current carrying portion is essentially free of a material which is lead-rich.

    Abstract translation: 连续薄膜倍增极包括具有至少一个通道的衬底,其具有通道壁,覆盖通道壁的隔离层和覆盖隔离层的薄膜。 薄膜包括载流部分和覆盖载流部分的电子发射部分。 电子发射部分基本上不含富二氧化硅,富碱和贫铅的材料。 载流部分基本上不含富铅的材料。

    Method of manufacturing microchannel electron multipliers
    109.
    发明授权
    Method of manufacturing microchannel electron multipliers 失效
    制造微通道电子倍增器的方法

    公开(公告)号:US5205902A

    公开(公告)日:1993-04-27

    申请号:US789975

    申请日:1991-11-12

    Abstract: A microchannel plate and method is disclosed. In a preferred embodiment the microchannel plate is a water of anisotropically etchable material having been subjected to a directionally applied flux of reactive particles against at least one face of the wafer in selected areas corresponding to microchannel locations. The flux removes material from the selected areas to produce microchannels in the wafer in accordance with the directionality of the applied flux.

    Abstract translation: 公开了一种微通道板和方法。 在优选实施例中,微通道板是各向异性可蚀刻材料的水,其已经在对应于微通道位置的选定区域中经过定向施加的反应性颗粒的流量抵靠晶片的至少一个面。 通量从选定区域去除材料,以根据施加的焊剂的方向性在晶片中产生微通道。

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