公开(公告)号：US20110110172A1

公开(公告)日：2011-05-12

申请号：US12929349

申请日：2011-01-18

Applicant: Kwang Jin Lee ,  Du Eung Kim ,  Hye Jin Kim

Inventor： Kwang Jin Lee ,  Du Eung Kim ,  Hye Jin Kim

IPC: G11C7/22 ,  G11C7/10

CPC classification number: G11C13/0064 ,  G11C7/1078 ,  G11C7/1096 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C15/00 ,  G11C2013/0078 ,  G11C2211/5621 ,  G11C2211/5642 ,  G11C2211/5643

Abstract: At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.

公开(公告)号：US20110043647A1

公开(公告)日：2011-02-24

申请号：US12859543

申请日：2010-08-19

Applicant: Hye-jin Kim ,  Hyun-sik Yu

Inventor： Hye-jin Kim ,  Hyun-sik Yu

IPC: H04N5/228

CPC classification number: H04N5/23248 ,  H04N5/23212 ,  H04N5/23254

Abstract: A method and apparatus for determining a shaken image by using auto focusing. The method includes calculating a maximum AF value of a preview image and a maximum AF value of a captured image that is down-sampled according to the preview image and comparing the maximum AF value of the preview with the maximum AF value of the captured image to determine whether the captured image is shaken or not.

Abstract translation: 一种通过使用自动聚焦来确定摇动图像的方法和装置。 该方法包括根据预览图像计算预览图像的最大AF值和下采样的拍摄图像的最大AF值，并将预览的最大AF值与拍摄图像的最大AF值进行比较， 确定捕获的图像是否被摇动。

公开(公告)号：US20110032377A1

公开(公告)日：2011-02-10

申请号：US12852210

申请日：2010-08-06

Applicant: Hye-jin Kim ,  Jun-ho Choi ,  Dong-kyu Cha

Inventor： Hye-jin Kim ,  Jun-ho Choi ,  Dong-kyu Cha

IPC: H04N5/228 ,  H04N5/222

CPC classification number: H04N5/23293 ,  G03B17/20 ,  H04N5/232 ,  H04N5/23219 ,  H04N5/23222 ,  H04N2101/00

Abstract: Provided are a digital photographing apparatus capable of taking a self-shot, a method of controlling the same, and a recording medium storing a program to execute the method. A digital photographing apparatus includes a shooting unit, configured to generate a live image of a subject; a main display unit, configured to display the generated image; an auxiliary display unit mounted on a front of the digital photographing apparatus and configured to display the generated image; a determination unit configured to determine whether the auxiliary display unit is switched on or off; and a self-shot setting unit configured to set a self-shot mode when the auxiliary display unit is switched from an ‘off’ state to an ‘on’ state.

Abstract translation: 提供一种能够拍摄自拍的数字摄影装置，其控制方法以及存储执行该方法的程序的记录介质。 数字拍摄装置包括拍摄单元，被配置为产生被摄体的实时图像; 主显示单元，被配置为显示所生成的图像; 辅助显示单元，安装在数字摄影设备的前面并被配置为显示所生成的图像; 确定单元，被配置为确定辅助显示单元是否被接通或断开; 以及自拍设定单元，被配置为当辅助显示单元从“关闭”状态切换到“打开”状态时设置自拍模式。

公开(公告)号：US20100220521A1

公开(公告)日：2010-09-02

申请号：US12724679

申请日：2010-03-16

Applicant: Hye-jin KIM ,  Kwang-jin LEE ,  Du-eung KIM

Inventor： Hye-jin KIM ,  Kwang-jin LEE ,  Du-eung KIM

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C13/0064 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0092

Abstract: A method of operating a phase change random access memory (PRAM) device comprises performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.

Abstract translation: 一种操作相变随机存取存储器（PRAM）装置的方法包括执行程序操作以将数据存储在所述装置的所选择的PRAM单元中，其中所述程序操作包括多个顺序程序循环。 该方法还包括在编程操作的中间暂停编程操作，并且在暂停编程操作之后，响应于恢复命令恢复程序操作。

公开(公告)号：US20100134948A1

公开(公告)日：2010-06-03

申请号：US12617848

申请日：2009-11-13

Applicant: Hyun-Chul PARK ,  Hye-Jin KIM ,  Woon-Bong HWANG ,  Young-Deuk KIM ,  Kun-Hong LEE

Inventor： Hyun-Chul PARK ,  Hye-Jin KIM ,  Woon-Bong HWANG ,  Young-Deuk KIM ,  Kun-Hong LEE

IPC: H01G5/012 ,  B05D5/12 ,  G03F7/20

CPC classification number: G01N27/223

Abstract: Disclosed are a humidity sensor and a fabricating method thereof. The humidity sensor includes a substrate, an anodic aluminum oxide layer formed on the substrate and having a plurality of holes, and electrodes formed on the anodic aluminum oxide layer, in order to improve sensitivity and accuracy of the humidity sensor. Further, the fabricating method of a humidity sensor includes preparing an aluminum substrate, forming an anodic aluminum oxide layer by oxidizing the aluminum substrate, and forming electrodes on the anodic aluminum oxide layer.

Abstract translation: 公开了一种湿度传感器及其制造方法。 为了提高湿度传感器的灵敏度和精度，湿度传感器包括基板，形成在基板上并具有多个孔的阳极氧化铝层和形成在阳极氧化铝层上的电极。 此外，湿度传感器的制造方法包括制备铝基板，通过氧化铝基板形成阳极氧化铝层，以及在阳极氧化铝层上形成电极。

公开(公告)号：US20100124103A1

公开(公告)日：2010-05-20

申请号：US12591238

申请日：2009-11-13

Applicant: Hye-jin Kim ,  Kwang-ho Kim ,  Young-kug Moon ,  Byung-gil Choi

Inventor： Hye-jin Kim ,  Kwang-ho Kim ,  Young-kug Moon ,  Byung-gil Choi

IPC: G11C11/00 ,  G11C11/36 ,  G11C7/00

CPC classification number: G11C13/0023 ,  G11C7/12 ,  G11C8/12 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/0028

Abstract: A resistance-change random access memory device includes a resistance-change memory cell array having a plurality of resistance-change memory cells, where a plurality of word lines are connected to respective first terminals of the plurality of resistance-change memory cells. A plurality of bit lines are disposed perpendicular to the word lines and connected to respective second terminals of the plurality of resistance-change memory cells. The device also includes a plurality of discharge elements that are capable of connecting or disconnecting respective bit lines from a discharge voltage, where the discharge elements connect the respective bit lines to the discharge voltage before write and read operations.

Abstract translation: 电阻变化随机存取存储器件包括具有多个电阻变化存储单元的电阻变化存储单元阵列，其中多个字线连接到多个电阻变化存储单元的相应第一端子。 多个位线垂直于字线布置并连接到多个电阻变化存储单元的相应的第二端子。 该装置还包括能够将各个位线与放电电压连接或断开的多个放电元件，其中放电元件在写入和读取操作之前将各个位线连接到放电电压。

公开(公告)号：US07701757B2

公开(公告)日：2010-04-20

申请号：US11834845

申请日：2007-08-07

Applicant: Hye-jin Kim ,  Kwang-jin Lee ,  Du-eung Kim

Inventor： Hye-jin Kim ,  Kwang-jin Lee ,  Du-eung Kim

IPC: G11C11/00

CPC classification number: G11C13/0064 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0092

Abstract: A method of operating a phase change random access memory (PRAM) device comprises performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.

Abstract translation: 一种操作相变随机存取存储器（PRAM）装置的方法包括执行程序操作以将数据存储在所述装置的所选择的PRAM单元中，其中所述程序操作包括多个顺序程序循环。 该方法还包括在编程操作的中间暂停编程操作，并且在暂停编程操作之后，响应于恢复命令恢复程序操作。

公开(公告)号：US20100061146A1

公开(公告)日：2010-03-11

申请号：US12556787

申请日：2009-09-10

Applicant: Byung-Gil Choi ,  Hye-Jin Kim

Inventor： Byung-Gil Choi ,  Hye-Jin Kim

IPC: G11C11/00 ,  G11C7/04 ,  G11C5/14

CPC classification number: G11C8/08 ,  G11C13/0004 ,  G11C13/0028 ,  G11C2213/72

Abstract: A nonvolatile memory device may include a memory cell array having a plurality of nonvolatile memory cells arranged in a matrix including a plurality of rows of the nonvolatile memory cells. Each of a plurality of word lines may be coupled with nonvolatile memory cells of a respective row of the matrix. A row decoder may be coupled to the plurality of word lines with the row decoder being configured to disable at least one of the word lines using a row bias having a level that is adjusted responsive to changes in temperature. Such a nonvolatile memory device may operate with reduced standby currents.

Abstract translation: 非易失性存储器件可以包括存储单元阵列，该存储单元阵列具有以矩阵形式布置的多个非易失性存储单元，包括多行非易失性存储单元。 多个字线中的每一个可以与矩阵的相应行的非易失性存储器单元耦合。 行解码器可以耦合到多个字线，其中行解码器被配置为使用具有响应于温度变化来调整的电平的行偏置来禁用至少一个字线。 这种非易失性存储器件可以以减少的待机电流工作。

公开(公告)号：US20090303243A1

公开(公告)日：2009-12-10

申请号：US12318023

申请日：2008-12-19

Applicant: Jong Hee Hwang ,  Hye Jin Kim ,  Ju Seong Park

Inventor： Jong Hee Hwang ,  Hye Jin Kim ,  Ju Seong Park

IPC: G06T1/60

CPC classification number: G09G3/20 ,  G09G3/2055 ,  G09G3/3648 ,  G09G2320/0233 ,  G09G2320/0285 ,  G09G2330/08 ,  G09G2330/10

Abstract: Circuit for compensating a display defect in a video display device of the present invention includes a memory having position information on a plurality of regular patterned defective regions of a display panel, gray scale section information, a defect level data on each of the regular patterned defective regions, and a plurality of compensation data on each of the defect level data stored therein, a first compensation unit, upon reception of data to be displayed on the regular patterned defective regions, for determining defect level data on the regular patterned defective regions of the data to be displayed, selecting a compensation data set on the defect level data determined thus, and selecting a compensation data on the data to be displayed from the compensation data selected thus, for compensating the data to be displayed, and a second compensator for distributing the data compensated thus at the first compensation unit spatially and temporally by using dither patterns for making fine compensation, thereby suppressing size increase of the compensation data.

Abstract translation: 用于补偿本发明的视频显示装置中的显示缺陷的电路包括具有关于显示面板的多个规则图案化缺陷区域的位置信息的存储器，灰度区段信息，每个常规图案化缺陷的缺陷水平数据 区域，以及存储在其中的每个缺陷级数据的多个补偿数据，第一补偿单元，在接收到要在正常图案化缺陷区域上显示的数据时，用于确定有缺陷级别数据的正常图案化缺陷区域 要显示的数据，选择对由此确定的缺陷级数据设置的补偿数据，并从由此选择的补偿数据中选择要显示的数据的补偿数据，以补偿要显示的数据，以及用于分配的第二补偿器 通过使用用于makin的抖动图案，在空间和时间上在第一补偿单元处补偿的数据 g精细补偿，从而抑制补偿数据的大小增加。

公开(公告)号：US20090296459A1

公开(公告)日：2009-12-03

申请号：US12476875

申请日：2009-06-02

Applicant: Hye-Jin Kim ,  Byung-Gil Choi ,  Du-Eung Kim

Inventor： Hye-Jin Kim ,  Byung-Gil Choi ,  Du-Eung Kim

IPC: G11C11/00 ,  G11C8/10 ,  G11C7/06

CPC classification number: G11C13/0023 ,  G11C8/10 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0026

Abstract: A nonvolatile memory device may include a memory cell array with a plurality of nonvolatile memory cells arranged in an array of rows and columns. Each of a plurality of bit lines may be coupled to nonvolatile memory cells in a respective one of the columns of the array, and each of a plurality of column selection switches may be coupled to a respective one of the bit lines. A column decoder may be coupled to the plurality of column selection switches, and the column decoder may be configured to select a first one of the bit lines using a first column selection signal having a first signal level applied to a first one of the column selection switches. The column decoder may be further configured to select a second one of the bit lines using a second column selection signal having a second signal level applied to a second one of the column selection switches with the second signal level being different than the first signal level.

Abstract translation: 非易失性存储器件可以包括具有排列成行和列阵列的多个非易失性存储单元的存储单元阵列。 多个位线中的每一个可以耦合到阵列的各个列中的非易失性存储器单元，并且多个列选择开关中的每一个可以耦合到相应的一个位线。 列解码器可以耦合到多个列选择开关，并且列解码器可以被配置为使用具有施加到列选择中的第一个的第一信号电平的第一列选择信号来选择位线中的第一位 开关。 列解码器还可以被配置为使用具有第二信号电平的第二列选择信号来选择位线中的第二位，其中第二信号电平施加到第二信号电平不同于第一信号电平的列选择开关中的第二信号电平。