Codeword automatic repeat request/decoding method and transmission/reception apparatus using feedback information
    111.
    发明申请
    Codeword automatic repeat request/decoding method and transmission/reception apparatus using feedback information 失效
    Codeword自动重发请求/解码方法和使用反馈信息的发送/接收装置

    公开(公告)号:US20070136633A1

    公开(公告)日:2007-06-14

    申请号:US11635791

    申请日:2006-12-08

    Abstract: A codeword retransmission/decoding method and transmission/receiving apparatus uses feedback information. When a failure to decode data received from a receiving node occurs, the feedback information including success/failure information of the decoding and retransmission information are transmitted to a transmission node. The retransmission success probability may be increased when the retransmission feedback information is configured by the receiving apparatus repeating code-bits of the codeword just previously transmitted so as to demodulate the retransmission part.

    Abstract translation: 码字重发/解码方法和发送/接收装置使用反馈信息。 当发生从接收节点接收到的数据解码失败时,包括解码和重传信息的成功/失败信息的反馈信息被发送到发送节点。 当重发反馈信息由接收装置配置重复先前发送的码字的码比特以解调重传部分时,可以增加重传成功概率。

    Home network system
    112.
    发明申请
    Home network system 审中-公开
    家庭网络系统

    公开(公告)号:US20070130278A1

    公开(公告)日:2007-06-07

    申请号:US10558433

    申请日:2004-02-12

    CPC classification number: H04B1/202 H04L12/2818

    Abstract: The present invention discloses a home network system which can achieve communication between a home master device and a remote control server by using a predetermined message structure. The home network system includes a home master device connected to a plurality of home appliances, and a remote control server connected to the home master device through a first network, for transmitting/receiving a message between a user terminal and the home master device. The message transmitted/received between the home master device and the remote control server includes at least a product code unit of the corresponding home appliance, a message code unit for notifying a transmission/reception direction of the message, parameter units under the definition of the message, and a number unit of parameters.

    Abstract translation: 本发明公开了一种家庭网络系统,其可以通过使用预定的消息结构来实现家庭主设备和远程控制服务器之间的通信。 家庭网络系统包括连接到多个家用电器的家庭主设备和通过第一网络连接到家庭主设备的远程控制服务器,用于在用户终端和家庭主设备之间发送/接收消息。 在家庭主设备和远程控制服务器之间发送/接收的消息至少包括相应家用电器的产品代码单元,用于通知消息的发送/接收方向的消息代码单元, 消息和一个单位的参数。

    Home network system
    113.
    发明申请
    Home network system 失效
    家庭网络系统

    公开(公告)号:US20060251086A1

    公开(公告)日:2006-11-09

    申请号:US10558434

    申请日:2004-05-14

    Abstract: The present invention discloses a home network using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, when the protocol includes an application layer for handling a message for controlling and monitoring the electric device, a network layer for network-connecting the electric device to the network manager, a data link layer for accessing shared transmission medium, and a physical layer for providing a physical interface between the electric device and the network manager, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code for network security when accessing the dependent transmission medium.

    Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络。 家庭网络系统包括:基于预定协议的网络; 至少电气设备连接到网络; 以及连接到网络的用于控制和/或监视电子设备的网络管理器,当协议包括用于处理用于控制和监视电子设备的消息的应用层时,网络层将电气设备网络连接到 网络管理器,用于访问共享传输介质的数据链路层,以及用于在电气设备和网络管理器之间提供物理接口的物理层,其中物理层还包括用于向从属传输介质提供接口的特殊协议, 并且所述网络层还包括用于在访问所述依赖传输介质时管理用于网络安全性的归属代码的归属代码控制子层。

    Self-aligned split-gate nonvolatile memory structure and a method of making the same

    公开(公告)号:US07078295B2

    公开(公告)日:2006-07-18

    申请号:US10834082

    申请日:2004-04-29

    CPC classification number: H01L27/11521 H01L27/115 H01L29/42324 H01L29/7885

    Abstract: Provided are non-volatile split-gate memory cells having self-aligned floating gate and the control gate structures and exemplary processes for manufacturing such memory cells that provide improved dimensional control over the relative lengths and separation of the split-gate elements. Each control gate includes a projecting portion that extends over at least a portion of the associated floating gate with the size of the projecting portion being determined by a first sacrificial polysilicon spacer that, when removed, produces a concave region in an intermediate insulating structure. The control gate is then formed as a polysilicon spacer adjacent the intermediate insulating structure, the portion of the spacer extending into the concave region determining the dimension and spacing of the projecting portion and the thickness of the interpoly oxide (IPO) separating the upper portions of the split-gate electrodes thereby providing improved performance and manufacturability.

    Split gate type nonvolatile semiconductor memory device, and method of fabricating the same

    公开(公告)号:US20060128098A1

    公开(公告)日:2006-06-15

    申请号:US11349402

    申请日:2006-02-07

    Abstract: A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.

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