Abstract:
A codeword retransmission/decoding method and transmission/receiving apparatus uses feedback information. When a failure to decode data received from a receiving node occurs, the feedback information including success/failure information of the decoding and retransmission information are transmitted to a transmission node. The retransmission success probability may be increased when the retransmission feedback information is configured by the receiving apparatus repeating code-bits of the codeword just previously transmitted so as to demodulate the retransmission part.
Abstract:
The present invention discloses a home network system which can achieve communication between a home master device and a remote control server by using a predetermined message structure. The home network system includes a home master device connected to a plurality of home appliances, and a remote control server connected to the home master device through a first network, for transmitting/receiving a message between a user terminal and the home master device. The message transmitted/received between the home master device and the remote control server includes at least a product code unit of the corresponding home appliance, a message code unit for notifying a transmission/reception direction of the message, parameter units under the definition of the message, and a number unit of parameters.
Abstract:
The present invention discloses a home network using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, when the protocol includes an application layer for handling a message for controlling and monitoring the electric device, a network layer for network-connecting the electric device to the network manager, a data link layer for accessing shared transmission medium, and a physical layer for providing a physical interface between the electric device and the network manager, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code for network security when accessing the dependent transmission medium.
Abstract:
A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
Abstract:
Provided are non-volatile split-gate memory cells having self-aligned floating gate and the control gate structures and exemplary processes for manufacturing such memory cells that provide improved dimensional control over the relative lengths and separation of the split-gate elements. Each control gate includes a projecting portion that extends over at least a portion of the associated floating gate with the size of the projecting portion being determined by a first sacrificial polysilicon spacer that, when removed, produces a concave region in an intermediate insulating structure. The control gate is then formed as a polysilicon spacer adjacent the intermediate insulating structure, the portion of the spacer extending into the concave region determining the dimension and spacing of the projecting portion and the thickness of the interpoly oxide (IPO) separating the upper portions of the split-gate electrodes thereby providing improved performance and manufacturability.
Abstract:
A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.
Abstract:
A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.
Abstract:
A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolates the first and second adjacent floating gates from one another. A control gate is formed on the oxide layer on the first and second adjacent floating gates. Related devices are also disclosed.
Abstract:
The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0≦x
Abstract:
Disclosed is a broadcasting and communication combining system based on an Ethernet and a method thereof for providing an Internet service and a multi-channel broadcasting service. The broadcasting and communication combining system and method based on an Ethernet uses Ethernet broadcasting frames on a data communication network to provide a wideband Internet service and a multi-channel digital broadcasting service. To support both Internet and broadcasting with one wavelength, the broadcasting traffic is converted to Ethernet data and multiplexed, and the multiplexed broadcasting traffic comprising the same band (one wavelength) of Internet data is transferred to a subscriber network. The subscriber terminal unit discriminates between Internet traffic and broadcasting traffic and outputs the Internet traffic and the broadcasting traffic to the final receiver.