摘要:
A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
摘要:
A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.
摘要:
A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.
摘要:
A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices. wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).
摘要:
A key input device combined with a key display unit and a digital appliance having the same are disclosed. The key input device includes a key display unit for displaying a character or an image that identifies a key, a touch sensing unit that moves down and up by a pressure applied to this key, and a signal generation unit for generating an electric signal in accordance with the pressure applied to the key, wherein the character or the image displayed on the key display unit can be changed.
摘要:
The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.
摘要:
A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, andR.sup.2 and R.sup.3 are each independently a perfluorinated C.sub.1-4 alkyl group.
摘要:
A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
摘要:
The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要:
A key input device combined with a key display unit and a digital appliance having the same are disclosed. The key input device includes a key display unit for displaying a character or an image that identifies a key, a touch sensing unit that moves down and up by a pressure applied to this key, and a signal generation unit for generating an electric signal in accordance with the pressure applied to the key, wherein the character or the image displayed on the key display unit can be changed.