Lignin blockers and uses thereof
    111.
    发明授权
    Lignin blockers and uses thereof 有权
    木质素阻滞剂及其用途

    公开(公告)号:US07875444B2

    公开(公告)日:2011-01-25

    申请号:US11229817

    申请日:2005-09-19

    CPC classification number: C12P7/10 C12P7/08 C12P19/02 Y02E50/16 Y02E50/17

    Abstract: Disclosed is a method for converting cellulose in a lignocellulosic biomass. The method provides for a lignin-blocking polypeptide and/or protein treatment of high lignin solids. The treatment enhances cellulase availability in cellulose conversion and allows for the determination of optimized pretreatment conditions. Additionally, ethanol yields from a Simultaneous Saccharification and Fermentation process are improved 5-25% by treatment with a lignin-blocking polypeptide and/or protein. Thus, a more efficient and economical method of processing lignin containing biomass materials utilizes a polypeptide/protein treatment step that effectively blocks lignin binding of cellulase.

    Abstract translation: 公开了一种在木质纤维素生物质中转化纤维素的方法。 该方法提供高木质素固体的木质素阻断多肽和/或蛋白质处理。 该处理增强了纤维素转化中的纤维素酶可用性,并且允许确定优化的预处理条件。 此外,通过用木质素阻断多肽和/或蛋白质处理,来自同时糖化和发酵过程的乙醇产率提高了5-25%。 因此,处理含木质素的生物质材料的更有效和经济的方法利用有效阻断木质素结合纤维素酶的多肽/蛋白质处理步骤。

    Multimerization of HIV-1 Vif protein as a therapeutic target
    115.
    发明授权
    Multimerization of HIV-1 Vif protein as a therapeutic target 有权
    HIV-1 Vif蛋白多聚化作为治疗靶点

    公开(公告)号:US07498138B2

    公开(公告)日:2009-03-03

    申请号:US11809953

    申请日:2007-06-04

    CPC classification number: C07K14/005 A61K38/00 C12N2740/16322 Y10S530/826

    Abstract: The HIV-1 protein Vif comprises a multimerization domain that allows Vif-Vif interaction and Vif multimerization, which is important for Vif function in the HIV-1 life-cycle. A method for screening for an antagonist of Vif comprises contacting the multimerization domain of Vif with a test compound that specifically binds the multimerization domain. Antagonists identified by the screening assay inhibit Vif multimerization. The antagonists inhibit essential functions of Vif and accordingly are useful as inhibitors of HIV-1 replication.

    Abstract translation: HIV-1蛋白Vif包含允许Vif-Vif相互作用和Vif多聚化的多聚化结构域,这对HIV-1生命周期中的Vif功能是重要的。 用于筛选Vif拮抗剂的方法包括使Vif的多聚化结构域与特异性结合多聚化结构域的测试化合物接触。 通过筛选测定鉴定的拮抗剂抑制Vif多聚化。 拮抗剂抑制Vif的基本功能,因此可用作HIV-1复制的抑制剂。

    Image signal processing circuit used in electronic product
    119.
    发明申请
    Image signal processing circuit used in electronic product 审中-公开
    图像信号处理电路用于电子产品

    公开(公告)号:US20080106611A1

    公开(公告)日:2008-05-08

    申请号:US11983019

    申请日:2007-11-05

    CPC classification number: H04N5/23293 H04N5/2628 H04N9/045

    Abstract: An exemplary image signal processing circuit (20) includes an image sensor (22), a drive circuit (28), and a microprocessor (24). The drive circuit includes an image signal processor (25) and a data processor (26). The microprocessor is provided to send control signals to the image sensor, the image signal processor, and the data processor. The image sensor is provided to receive exterior light beams and to convert the light beams into image signals. The image signal processor is provided to turn on the image sensor and convert the image signals received from the image sensor into image signals of a predetermined type and having a predetermined resolution. The data processor is provided to receive the image signals converted by the image signal processor and to process the converted image signals to be applied to a display device such that the display device displays corresponding images.

    Abstract translation: 示例性图像信号处理电路(20)包括图像传感器(22),驱动电路(28)和微处理器(24)。 驱动电路包括图像信号处理器(25)和数据处理器(26)。 提供微处理器以向图像传感器,图像信号处理器和数据处理器发送控制信号。 图像传感器被提供以接收外部光束并将光束转换成图像信号。 提供图像信号处理器以打开图像传感器并将从图像传感器接收的图像信号转换成预定类型并具有预定分辨率的图像信号。 提供数据处理器以接收由图像信号处理器转换的图像信号,并处理要应用于显示装置的转换图像信号,使得显示装置显示相应的图像。

    III-V power field effect transistors
    120.
    发明授权
    III-V power field effect transistors 有权
    III-V功率场效应晶体管

    公开(公告)号:US07180103B2

    公开(公告)日:2007-02-20

    申请号:US10948897

    申请日:2004-09-24

    CPC classification number: H01L29/4983 H01L29/812

    Abstract: A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel. The overlapping gate/field plate or p-type pocket extend into the drift region of the device, controlling the electrical potential of the device in a manner that provides the desired control of the electrical potential in the drift region.

    Abstract translation: 公开了一种配置用于大功率应用的场效应晶体管及其制造方法。 场效应晶体管由III-V材料形成,并且被配置为具有对大功率应用有利的击穿电压。 通过确定该工作电压的工作电压和期望的击穿电压来配置场效应晶体管。 然后识别与工作电压和期望的击穿电压相关联的峰值电场。 然后将该器件配置为在该工作电压下呈现鉴定的峰值电场。 通过选择控制器件漂移区域中的电位的器件特征来实现该器件的配置。 这些特征包括使用重叠的栅极或场板结合覆盖器件沟道的势垒层,或形成在器件沟道下形成的单晶III-V材料区域中的p型阱。 重叠的栅极/场板或p型阱延伸到器件的漂移区域中,以提供对漂移区域中的电势的期望控制的方式控制器件的电位。

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