公开(公告)号：US20070259513A1

公开(公告)日：2007-11-08

申请号：US11381219

申请日：2006-05-02

Applicant: David Wu ,  Mark Michael

Inventor： David Wu ,  Mark Michael

IPC: H01L21/44

CPC classification number: H01L21/76819 ,  H01L21/76802 ,  H01L21/76834 ,  H01L29/7843

Abstract: The present invention is directed to methods of forming contact openings. In one illustrative embodiment, the method includes forming a feature above a semiconducting substrate, forming a layer stack comprised of a plurality of layers of material above the feature, the layer stack having an original height, reducing the original height of the layer stack to thereby define a reduced height layer stack above the feature, forming an opening in the reduced height layer stack for a conductive member that will be electrically coupled to the feature and forming the conductive member in the opening in the reduced height layer stack.

Abstract translation: 本发明涉及形成接触开口的方法。 在一个说明性实施例中，该方法包括在半导体衬底上形成特征，形成由特征上方的多层材料构成的层叠层，层堆叠具有原始高度，从而降低层堆叠的原始高度 在所述特征之上限定减小的高度层堆叠，在所述减小的高度层堆叠中形成用于导电构件的开口，所述导电构件将电耦合到所述特征并且在所述还原高度层堆叠中的所述开口中形成所述导电构件。

公开(公告)号：US07272199B2

公开(公告)日：2007-09-18

申请号：US10057133

申请日：2002-01-24

Applicant: Andrew Storm ,  David Wu

Inventor： Andrew Storm ,  David Wu

IPC: H04B1/10 ,  H03H7/30

CPC classification number: H04L25/03012 ,  H04L25/03019 ,  H04L25/03159 ,  H04L2025/03414 ,  H04L2025/03445 ,  H04L2025/03522

Abstract: An update mechanism and approach are provided for configuring a communications receiver. According to the approach, a time domain equalizer and a frequency domain equalizer in a communications receiver are dynamically updated based upon performance data that indicates the performance of a communications channel from which the communications receiver receives data. This approach accounts for changes in the communications channel attributable to changes in the transmission medium or changes in interference sources.

Abstract translation: 提供了一种用于配置通信接收机的更新机制和方法。 根据该方法，基于指示通信接收机从其接收数据的通信信道的性能的性能数据，动态地更新通信接收机中的时域均衡器和频域均衡器。 这种方法考虑了由于传输介质的变化或干扰源的变化引起的通信信道的变化。

公开(公告)号：US07253045B1

公开(公告)日：2007-08-07

申请号：US10889026

申请日：2004-07-13

Applicant: Derick J. Wristers ,  David Wu ,  Hormuzdiar E. Nariman

Inventor： Derick J. Wristers ,  David Wu ,  Hormuzdiar E. Nariman

IPC: H01L27/092 ,  H01L29/786

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L29/1054

Abstract: A method of manufacturing a semiconductor device includes forming a silicon germanium layer and a N-channel transistor and a P-channel transistor over the silicon germanium layer. A beta ratio of the N-channel transistor to the P-channel transistor is about 1.8 to about 2.2. A semiconductor device is also disclosed.

Abstract translation: 制造半导体器件的方法包括在硅锗层上形成硅锗层和N沟道晶体管以及P沟道晶体管。 N沟道晶体管与P沟道晶体管的β比率为约1.8至约2.2。 还公开了一种半导体器件。

公开(公告)号：USD539523S1

公开(公告)日：2007-04-03

申请号：US29240461

申请日：2005-10-14

Applicant: David Wu

Designer： David Wu

公开(公告)号：US07176095B1

公开(公告)日：2007-02-13

申请号：US10790939

申请日：2004-03-01

Applicant: Akif Sultan ,  David Wu ,  Wen-Jie Qi ,  Mark Fuselier

Inventor： Akif Sultan ,  David Wu ,  Wen-Jie Qi ,  Mark Fuselier

IPC: H01L21/336

CPC classification number: H01L21/26586 ,  H01L29/6659 ,  H01L29/7833

Abstract: Methods of fabricating halo regions are provided. In one aspect, a method is provided of fabricating a first halo region and a second halo region for a circuit device of a first conductivity type and having a gate structure with first and second sidewalls. The first halo region of a second conductivity type is formed by implanting the substrate with impurities in a first direction toward the first sidewall of the gate structure. The second halo region of the second conductivity type is formed by implanting the substrate with impurities in a second direction toward the second sidewall of the gate structure. The first and second halo regions are formed without implanting impurities in a direction substantially perpendicular to the first and second directions.

Abstract translation: 提供制造晕圈的方法。 在一个方面，提供了一种制造用于第一导电类型的电路器件的第一卤素区域和第二卤素区域的方法，并具有具有第一和第二侧壁的栅极结构。 第二导电类型的第一晕区是通过沿着第一方向将杂质注入栅极结构的第一侧壁而形成的。 第二导电类型的第二晕区是通过向栅极结构的第二侧壁向第二方向注入具有杂质的衬底形成的。 形成第一和第二晕圈，而不在基本上垂直于第一和第二方向的方向上植入杂质。

公开(公告)号：USD535220S1

公开(公告)日：2007-01-16

申请号：US29241236

申请日：2005-10-26

Applicant: David Wu

Designer： David Wu

公开(公告)号：US07134305B2

公开(公告)日：2006-11-14

申请号：US10938622

申请日：2004-09-13

Applicant: David Wu

Inventor： David Wu

IPC: B21F35/02

CPC classification number: B21F3/02 ,  B21F3/08 ,  B21F23/00 ,  B21F35/00

Abstract: A wire feeder driving mechanism capable of driving a wire feeder of a spring manufacturing machine to perform a three-dimensional movement. The spring manufacturing machine includes a machine base and a work table. The work table has an opening and a plurality of tool seats. The opening provides the feeding chuck of the wire feeder a moving space. The tool seat is provided to install a tool set to move back and forth on the work table. The wire feeder is assembled with a plurality of axial driving devices. The axial driving device is able to receive power and to move perpendicular to each other. The metal wire led through the wire feeder is thereby able to approach the tool seat in a three-dimensional manner. The spring manufacturing machine is therefore able to produce various complicated springs.

Abstract translation: 一种送丝机驱动机构，其能够驱动弹簧制造机器的送丝机进行三维运动。 弹簧制造机包括机座和工作台。 工作台具有开口和多个工具座。 开口为送丝机的进给卡盘提供移动空间。 提供刀座用于安装工具组以在工作台上来回移动。 送丝器组装有多个轴向驱动装置。 轴向驱动装置能够接收动力并且彼此垂直地移动。 通过送丝机引导的金属丝能够以三维方式接近工具座。 因此，弹簧制造机能够生产各种复杂的弹簧。

公开(公告)号：US06864516B2

公开(公告)日：2005-03-08

申请号：US10085903

申请日：2002-02-28

Applicant: Andy Wei ,  Akif Sultan ,  David Wu

Inventor： Andy Wei ,  Akif Sultan ,  David Wu

IPC: H01L21/265 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786 ,  H01L29/74

CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/3221 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/78612 ,  H01L29/78618 ,  H01L29/78621

Abstract: Various circuit devices incorporating junction-traversing dislocation regions and methods of making the same are provided. In one aspect, a method of processing is provided that includes forming an impurity region in a device region of a semiconductor-on-insulator substrate. The impurity region defines a junction. A dislocation region is formed in the device region that traverses the junction. The dislocation region provides a pathway to neutralize charge lingering in a floating body of a device.

Abstract translation: 提供了结合穿越位错区域的各种电路装置及其制造方法。 一方面，提供了一种处理方法，其包括在绝缘体上半导体衬底的器件区域中形成杂质区域。 杂质区限定了一个结。 在穿过结的器件区域中形成位错区域。 位错区域提供了中和装置的浮体中滞留电荷的途径。

公开(公告)号：US20050022723A1

公开(公告)日：2005-02-03

申请号：US10838908

申请日：2004-05-03

Applicant: David Marr ,  Tieying Gong ,  David Wu

Inventor： David Marr ,  Tieying Gong ,  David Wu

IPC: C30B7/00 ,  C30B29/54

CPC classification number: C30B7/00 ,  C30B29/54

Abstract: The methods provided use external fields such as light and electricity as a means of directing the crystallization of concentrated colloidal systems. Not only can nucleation be directed, crystal melting can be carefully controlled and light-induced crystal diffraction used as a means of directing light propagation. A number of factors play a significant role on the crystallization rate and location, including the intensity of the light field, the magnitude of the electric field, the colloid concentration, the colloid size, and the colloid composition. In varying these parameters, kinetics in these processes are extremely fast when compared to traditional colloidal crystallization approaches.

Abstract translation: 提供的方法使用诸如光和电的外部领域作为指导浓缩胶体体系的结晶的手段。 成核不仅可以引导，晶体熔化也可以小心控制，光诱导的晶体衍射用作引导光传播的手段。 许多因素对结晶速率和位置都起着重要的作用，包括光场强度，电场强度，胶体浓度，胶体尺寸和胶体组成。 在改变这些参数时，与传统的胶体结晶方法相比，这些方法中的动力学非常快。

公开(公告)号：USD479164S1

公开(公告)日：2003-09-02

申请号：US29169829

申请日：2002-10-28

Applicant: David Wu

Designer： David Wu