公开(公告)号：US20050274325A1

公开(公告)日：2005-12-15

申请号：US11099987

申请日：2005-04-05

申请人： Akira Kuibira ,  Hirohiko Nakata ,  Kenji Shinma

发明人： Akira Kuibira ,  Hirohiko Nakata ,  Kenji Shinma

IPC分类号： G01R31/26 ,  C23C16/00 ,  G01R31/30 ,  H01L21/00 ,  H01L21/02 ,  H01L21/66 ,  H01L21/68 ,  H01L21/683 ,  H05B3/06 ,  H05B3/10 ,  H05B3/20 ,  H05B3/68 ,  H05B3/74

CPC分类号： H01L21/67109 ,  H01L21/67103

摘要： The present invention provides a semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The present invention is a semiconductor heating apparatus, comprising a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.

摘要翻译： 本发明提供一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，并且其它芯片在低温待机。 本发明是一种半导体加热装置，包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。 多个加热部和支撑部接合在一起。 多个加热部的工件安装面优选构成为同一平面。 此外，优选地，分布在支撑部分下方的绝热材料。 加热部件优选为陶瓷加热器。

公开(公告)号：US07491432B2

公开(公告)日：2009-02-17

申请号：US10605764

申请日：2003-10-24

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： B32B9/00

CPC分类号： H01L21/67103 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/68735 ,  H05B3/143 ,  Y10T428/131

摘要： For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).

摘要翻译： 对于半导体制造设备，在加热晶片的过程中不发生开裂的陶瓷基座抑制来自放置在陶瓷基座上的晶片的圆周表面的热辐射，以提高晶片表面的等温质量。 在陶瓷基板（2a，2b）的表面或内部包括电阻加热元件（3）的半导体制造设备陶瓷基座（1）具有由可以容纳地携带晶片的凹部构成的晶片槽（5）。 晶片槽（5）的周边内表面和底面形成的角度超过90°和170°或更小，和/或底部周缘的曲率，其中周边内表面和底面 的口袋连接为0.1mm以上。 此外，等离子体电极可以设置在陶瓷基座（1）的陶瓷基板（2a，2b）的表面或内部。

公开(公告)号：US6122170A

公开(公告)日：2000-09-19

申请号：US343167

申请日：1999-06-29

申请人： Yoshiyuki Hirose ,  Kazutaka Sasaki ,  Mitsuru Shimazu ,  Hirohiko Nakata

发明人： Yoshiyuki Hirose ,  Kazutaka Sasaki ,  Mitsuru Shimazu ,  Hirohiko Nakata

IPC分类号： H01L23/12 ,  H01L23/13 ,  H01L23/373 ,  H01L23/538 ,  H01L25/07 ,  H01L25/18 ,  H05K7/20

CPC分类号： H01L23/5386 ,  C04B35/581 ,  C04B35/584 ,  C04B35/62625 ,  C04B35/634 ,  C04B37/026 ,  H01L23/13 ,  H01L25/072 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3873 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/604 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/555 ,  C04B2237/72 ,  H01L2924/0002 ,  H01L2924/13055

摘要： A ceramic base plate of aluminum nitride ceramics, for example, as a power module board has a metal layer on a surface of the ceramic base plate at a fixing portion at which the ceramic base plate is fixed onto a heat radiating plate. Further, a metal film is provided entirely on the rear surface of the ceramic base plate. An IGBT chip or the like is fixed onto the ceramic base plate with a conductive layer interposed therebetween, to form a power module board. Therefore, it is possible to avoid the generation of cracks when the ceramic base plate is mechanically fixed onto the heat radiating plate without using solder, and heat radiation from the ceramic base plate to the heat radiating plate can be improved.

摘要翻译： 作为功​​率模块基板的氮化铝陶瓷的陶瓷基板在陶瓷基板的固定部分具有在陶瓷基板的表面上固定有散热板的金属层。 此外，金属膜整体设置在陶瓷基板的后表面上。 IGBT导体等固定在陶瓷基板上，形成电源模块基板。 因此，在不使用焊锡的情况下将陶瓷基板机械地固定在散热板上时，可以避免产生裂缝，能够提高从陶瓷基板向散热板的散热。

公开(公告)号：US20070068921A1

公开(公告)日：2007-03-29

申请号：US11559389

申请日：2006-11-13

申请人： Akira Kuibira ,  Hirohiko Nakata

发明人： Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B3/68

CPC分类号： H01L21/67109

摘要： Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1a for controlled heating of a wafer placed on its top face, and block part 3a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1a by abutting on or separating from the reverse surface of heater part 1a. By having the heat capacity of block part 3a be 20% or more of the total heat capacity of heater part 1a and block part 3a, the heater cooling speed can be made 10°C./min or more.

摘要翻译： 加热器模块和使用加热器模块的半导体制造设备，用于提高后加热加热器的冷却速度，其显着地比传统的更高，并且可以有助于改善和提高生产率，而不伴随增加和成本增加 在半导体制造设备中。 加热器模块配备有加热器部分1a，用于受控加热放置在其顶面上的晶片，以及块部分3a，其被设置为可相对于所述加热器部件移动，用于通过邻接加热器部分1a来改变总体上的热容量 在加热器部分1a的反面上或与其分离。 通过使块部3a的热容量为加热器部1a和块部3a的总热容量的20％以上，加热器冷却速度可以为10℃/分钟以上。

公开(公告)号：US20060177697A1

公开(公告)日：2006-08-10

申请号：US10605764

申请日：2003-10-24

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： B32B13/04 ,  B32B9/00 ,  B32B19/00

CPC分类号： H01L21/67103 ,  C23C16/4581 ,  C23C16/4586 ,  H01L21/68735 ,  H05B3/143 ,  Y10T428/131

摘要： For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).

摘要翻译： 对于半导体制造设备，在加热晶片的过程中不发生开裂的陶瓷基座抑制来自放置在陶瓷基座上的晶片的圆周表面的热辐射，以提高晶片表面的等温质量。 在陶瓷基板（2a，2b）的表面或内部包括电阻加热元件（3）的半导体制造设备陶瓷基座（1）具有晶片槽（5），该凹槽由可容纳地携带 晶圆。 晶片槽（5）的周边内表面和底面形成的角度超过90°和170°或更小，和/或底部周缘的曲率，其中周边内表面和底面 的口袋连接为0.1mm以上。 此外，等离子体电极可以设置在陶瓷基座（1）的陶瓷基板（2a，2b）的表面或内部。

公开(公告)号：US20050167422A1

公开(公告)日：2005-08-04

申请号：US10500736

申请日：2003-03-20

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B3/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/687 ,  H05B3/10 ,  H05B3/12 ,  H05B3/14 ,  H05B3/18 ,  H05B3/74

CPC分类号： H01L21/68757 ,  H01L21/67103 ,  H05B3/143

摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which the temperature uniformity in the surface of a wafer during heating operations is enhanced by keeping fluctuations in the shape of the susceptor—particularly in the outer diameter along the thickness at normal temperature—under control. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3) on a surface of or inside ceramic substrates (2a), (2b). The difference between the maximum outer diameter and minimum outer diameter along the thickness of the ceramic susceptor when not heating is 0.8% or less of the average diameter along the wafer-support side. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a), (2b) of the ceramic susceptor (1). The ceramic substrates (2a), (2b) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.

摘要翻译： 对于半导体制造设备，可以提供陶瓷感受体，其中通过保持基座形状的波动（特别是在正常温度下的厚度的外径）来控制加热操作期间晶片表面的温度均匀性 - 在控制下 。 用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2a），（2b）的表面上或内部具有电阻加热元件（3）。 沿着不加热时的陶瓷基座的厚度的最大外径和最小外径之间的差异为晶片支撑侧的平均直径的0.8％以下。 等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a），（2b）的表面上或内部。 陶瓷基板（2a），（2b）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

公开(公告)号：US06569524B2

公开(公告)日：2003-05-27

申请号：US09886617

申请日：2001-06-22

申请人： Chihiro Kawai ,  Hirohiko Nakata

发明人： Chihiro Kawai ,  Hirohiko Nakata

IPC分类号： D02G300

CPC分类号： H01L23/3733 ,  B22F2998/00 ,  C22C32/00 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/181 ,  Y10T428/2933 ,  Y10T428/2982 ,  C22C32/0052 ,  C22C32/0084 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a composite material having comparatively high thermal conductivity and a small coefficient of thermal expansion, which is low cost and preferable as a heatsink material. A graphite powder and an alloy powder, whose main constituent is Ag and Cu, and including Ti, etc., which is selected from the elements belonging to 4A, 5A and 6A groups, are blended together, and are heated at a higher temperature than the melting point of the alloy in a vacuum state or in a gas atmosphere of He, Ar or hydrogen. A coating layer of metal carbide such as TiC is formed on the surface of the graphite grains, and at the same time, they are transformed into a sintered body. The composite material thus obtained is such that the relative density thereof is 70% or more, thermal conductivity thereof is 220 W/m·K or more at room temperature, and the mean coefficient of thermal expansion from the room temperature to 200° C. is 5 through 15×10−6/°C. Therefore, the composite material is best suitable as heatsink members for semiconductors. In addition, carbide powder such as carbon fibers or SiC may be used instead of graphite powder.

公开(公告)号：US5023147A

公开(公告)日：1991-06-11

申请号：US387430

申请日：1989-07-31

申请人： Hirohiko Nakata ,  Takao Nishioka ,  Nobuya Oooka ,  Kenya Motoyoshi

发明人： Hirohiko Nakata ,  Takao Nishioka ,  Nobuya Oooka ,  Kenya Motoyoshi

IPC分类号： C04B37/02

CPC分类号： C04B37/026 ,  C04B37/023 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/365 ,  C04B2237/368 ,  C04B2237/406 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/76 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/12806 ,  Y10T428/1284 ,  Y10T428/12896

摘要： A ceramics-metal joined body which excels in high temperature characteristics and joint strength is formed by metallizing the surface of ceramics such as oxides, carbides, borides, nitrides, and composites thereof, and joining a metallic member through a solder to the metallized surface.

公开(公告)号：US20050241584A1

公开(公告)日：2005-11-03

申请号：US10501791

申请日：2003-03-20

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B3/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/687 ,  H05B3/10 ,  H05B3/12 ,  H05B3/14 ,  H05B3/74 ,  C23C16/00

CPC分类号： H01L21/68757 ,  H01L21/67103 ,  H05B3/143

摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which by optimizing the inter-wiring-line separation in the resistive heating element, damage due to shorting between resistive heating element lines during heating operations is prevented while wafer-surface temperature uniformity is maintained. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3a) on a surface of or inside ceramic substrate (2), with the smallest angle θ formed by the bottom and lateral sides of the resistive heating element (3a) In a section of the resistive heating element (3a) being 5° or greater. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a) of the ceramic susceptor (1). The ceramic substrates (2a) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.

摘要翻译： 对于半导体制造设备，可以提供陶瓷感受体，其中通过优化电阻加热元件中的布线间隔离，防止在加热操作期间电阻加热元件线之间短路导致的损坏，同时保持晶片表面温度均匀性。 用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2）的表面或内部具有电阻加热元件（3a），其中由电阻加热元件（3）的底部和侧面形成的最小的角度θ a）电阻加热元件（3a）的一部分为5°或更大。 等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a）的表面上或内部。 陶瓷基板（2a）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

公开(公告)号：US20050184054A1

公开(公告)日：2005-08-25

申请号：US10501744

申请日：2003-03-20

申请人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

发明人： Yoshifumi Kachi ,  Akira Kuibira ,  Hirohiko Nakata

IPC分类号： H05B3/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/3065 ,  H05B3/10 ,  H05B3/12 ,  H05B3/14 ,  H05B3/74 ,  H05B3/02

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： Affords ceramic susceptors, for semiconductor manufacturing equipment, in which wafer-surface isothermal quality during heating operations is heightened by enhancing the degree of planarization of the susceptor wafer-carrying face in its high-temperature region where wafers are processed in the course of manufacturing semiconductors. Ceramic susceptor (1) for semiconductor manufacturing equipment has in the surface or interior of ceramic substrates (2a) and (2b) resistive heating element (3), and a non-heating (ordinary-temperature) arched contour in its wafer-carrying face is a concavity of 0.001 to 0.7 mm per 300 mm. A plasma electrode furthermore may be disposed in ceramic susceptor 1, in the surface or interior of ceramic substrates (2a) and (2b). Preferably, moreover, ceramic substrates (2a) and (2b) are at least one ceramic selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.

摘要翻译： 提供用于半导体制造设备的陶瓷感受器，其中在加热操作期间的晶片表面等温质量通过提高在制造半导体的过程中处理晶片的高温区域中的基座晶片承载面的平坦化程度来提高 。 用于半导体制造设备的陶瓷基座（1）在陶瓷基板（2a）和（2b）电阻加热元件（3）的表面或内部，以及在其晶片制造设备中的非加热（常温） 承载面为0.001〜0.7mm / 300mm的凹度。 此外，等离子体电极可以设置在陶瓷基座1中，陶瓷基板（2a）和（2b）的表面或内部。 此外，优选地，陶瓷基板（2a）和（2b）是选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种陶瓷。