公开(公告)号：US20060054947A1

公开(公告)日：2006-03-16

申请号：US10989339

申请日：2004-11-17

申请人： Yoshiaki Asao ,  Hiroaki Yoda

发明人： Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L29/94

CPC分类号： H01L43/08 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： A magnetic random access memory includes, a lower electrode, a magnetoresistive element which is arranged above the lower electrode and has side surfaces, and a protective film which covers the side surfaces of the magnetoresistive element, has a same planar shape as the lower electrode, and is formed by one of sputtering, plasma CVD, and ALD.

摘要翻译： 磁性随机存取存储器包括下电极，布置在下电极上方并具有侧表面的磁阻元件和覆盖磁阻元件的侧表面的保护膜具有与下电极相同的平面形状， 并且由溅射，等离子体CVD和ALD之一形成。

公开(公告)号：US06934184B2

公开(公告)日：2005-08-23

申请号：US10893915

申请日：2004-07-20

申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

CPC分类号： G11C11/15

摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

摘要翻译： 在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。 磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。 当选择对应的第一和第二布线时，选择每个存储单元。 每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端， 端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于 磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。 第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

公开(公告)号：US06882563B2

公开(公告)日：2005-04-19

申请号：US10305984

申请日：2002-11-29

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C7/00 ,  G11C11/00 ,  G11C11/14 ,  H01L21/77 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/10 ,  H01L27/22 ,  H01L43/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L27/224

摘要： A magnetic memory device includes a first memory portion, the first memory portion having a first wiring extending in a first direction, second wirings extending in a second direction, a first memory element portion in which magneto-resistance elements is connected in series and arranged at intersections between the first and second wirings, and a first switching element connected to one end of the first memory element portion, and a second memory portion which is adjacent to the first memory portion in the first direction and shares the first wiring with the first memory portion, the second memory portion having the first wiring, third wirings extending in the second direction, a second memory element portion in which the magneto-resistance elements are connected in series and arranged at intersections between the first and third wirings, and a second switching element connected to one end of the second memory element portion.

摘要翻译： 磁存储器件包括第一存储器部分，第一存储器部分具有沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，第一存储元件部分，其中磁阻元件串联连接并布置在 第一和第二布线之间的交点以及连接到第一存储元件部分的一端的第一开关元件和与第一存储器部分相邻的第一存储器部分的第二存储器部分，并且与第一存储器共享第一布线 第二存储部分具有第一布线，沿第二方向延伸的第三布线，第二存储元件部分，其中磁阻元件串联连接并布置在第一和第三布线之间的交点处;第二开关 元件连接到第二存储元件部分的一端。

公开(公告)号：US20050024930A1

公开(公告)日：2005-02-03

申请号：US10926047

申请日：2004-08-26

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US06797536B2

公开(公告)日：2004-09-28

申请号：US10767997

申请日：2004-02-02

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： H01L2100

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US06781872B2

公开(公告)日：2004-08-24

申请号：US10330115

申请日：2002-12-30

申请人： Yoshiaki Saito ,  Hiroaki Yoda ,  Yoshiaki Asao

发明人： Yoshiaki Saito ,  Hiroaki Yoda ,  Yoshiaki Asao

IPC分类号： G11C1100

CPC分类号： G11C11/16 ,  G11C11/5607

摘要： A magnetic memory includes first and second magnetoresistance effect elements (C1, C2) stacked on and under a first wiring (BL); and second and third wirings (DL1, DL2) extending perpendicularly to the first wiring (BL), such that one of two values of two-valued information is recorded by supplying a current to the first wiring while supplying a current to the second and third wirings respectively, and thereby simultaneously reverting magnetization in recording layers of the first and second magnetoresistance effect elements to predetermined directions respectively; and a difference between output signals obtained from the first and second magnetoresistance effect elements by supplying a sense current thereto via the first wiring is detected and read out as one of two values of the two-valued information.

摘要翻译： 磁存储器包括堆叠在第一布线（BL）上和之下的第一和第二磁阻效应元件（C1，C2）; 以及垂直于第一布线（BL）延伸的第二和第三布线（DL1，DL2），使得通过向第一和第三布线提供电流来向第一布线提供电流来记录两值信息的两个值中的一个 从而分别同时将第一和第二磁阻效应元件的记录层中的磁化恢复到预定的方向; 并且通过经由第一布线提供感测电流从第一和第二磁阻效应元件获得的输出信号之间的差异被检测和读出作为两值信息的两个值之一。

公开(公告)号：US06590244B2

公开(公告)日：2003-07-08

申请号：US10101702

申请日：2002-03-21

申请人： Yoshiaki Asao ,  Kazumasa Sunouchi ,  Kentaro Nakajima

发明人： Yoshiaki Asao ,  Kazumasa Sunouchi ,  Kentaro Nakajima

IPC分类号： H01L2976

CPC分类号： G11C5/025 ,  B82Y10/00 ,  G11C5/02 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L28/20 ,  H01L43/08

摘要： A memory cell section includes a first wiring which is extended in a first direction, and a second wiring which is extended in a second direction different from the first direction, and a third wiring which is disposed between the first and second wirings, and a first magneto resistive effect element which is disposed at an intersection of the first and second wirings between the first and second wirings, and is connected to the second and third wirings. Further, a peripheral circuit section includes a fourth wiring, and a fifth wiring which is disposed above the fourth wiring, and a second magneto resistive effect element which is disposed between the fourth and fifth wirings and is connected to the fourth and fifth wirings to be used as a resistive element.