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    Magnetic random access memory
    2.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US07376003B2

    公开(公告)日：2008-05-20

    申请号：US10465616

    申请日：2003-06-20

    申请人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

    发明人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.

    摘要翻译： 使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转 元件。 当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头 在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

    Magnetic memory device and method of manufacturing the same
    3.
    发明授权
    Magnetic memory device and method of manufacturing the same 有权
    磁记忆体装置及其制造方法

    公开(公告)号：US07291506B2

    公开(公告)日：2007-11-06

    申请号：US11171323

    申请日：2005-07-01

    申请人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    发明人： Kentaro Nakajima ,  Minoru Amano ,  Tomomasa Ueda ,  Shigeki Takahashi

    IPC分类号： H01L21/00

    CPC分类号： C23F4/00 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/308 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

    摘要翻译： 一种制造磁存储器件的方法包括在衬底上形成绝缘层，在绝缘层上形成下电极，在下电极的上表面上形成磁阻膜，该磁阻膜包括绝缘屏障 层和层叠在绝缘阻挡层的两侧的多个磁性膜，使用掩模层作为掩模将掩模层堆叠在磁阻膜上，对磁阻膜进行离子蚀刻，从而形成磁 电阻元件，在掩模的上表面，磁阻元件和下电极上形成绝缘膜，并用离子束蚀刻绝缘膜，使得磁阻元件的侧表面露出。

    Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof
    7.
    发明授权
    Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof 失效
    具有虚拟磁阻效应元件的磁存储装置及其制造方法

    公开(公告)号：US06916677B2

    公开(公告)日：2005-07-12

    申请号：US10798571

    申请日：2004-03-12

    申请人： Kentaro Nakajima ,  Minoru Amano

    发明人： Kentaro Nakajima ,  Minoru Amano

    IPC分类号： H01L27/105 ,  G11C7/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16

    摘要： A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.

    摘要翻译： 磁存储器件包括存储单元部分，位于存储单元部分附近的外围电路部分，多个第一磁阻效应元件，被布置在存储单元部分中并用作存储元件，并且多个第二 磁阻效应元件布置在外围电路部分的至少一部分中并用作虚拟物，其中第二磁阻效应元件的占据面积的总和为外围电路部分的5％至80％。

    Semiconductor memory device
    8.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US06803619B2

    公开(公告)日：2004-10-12

    申请号：US10615920

    申请日：2003-07-10

    申请人： Keiji Hosotani ,  Kentaro Nakajima

    发明人： Keiji Hosotani ,  Kentaro Nakajima

    IPC分类号： H01L2976

    CPC分类号： H01L27/228 ,  B82Y10/00

    摘要： A magnetic memory device capable of achieving high reliability and superior operation characteristics of tunneling magneto-resistive (TMR) elements is provided. This magnetic memory device includes a semiconductor substrate, a transistor which is formed above the semiconductor substrate, and a TMR element which is formed on or above an interlayer dielectric film that covers the transistor of the substrate. The device also includes a first wiring line which is buried in the interlayer dielectric film and connected to a source/drain diffusion layer of the transistor, a second wiring line which is buried under the TMR element while overlying the first wiring line within the interlayer dielectric film and which is used to apply a current-created magnetic field to the TMR element during writing, and a third wiring line connected to an upper surface of the TMR element and provided to cross the second wiring line. The third wiring line is for applying a current magnetic field to the TMR element during writing and also for causing a cell current to flow during reading. The second wiring line is formed by patterning techniques so that its both edges are placed outside of a pattern of the TMR element.

    摘要翻译： 提供了能够实现隧道磁阻（TMR）元件的高可靠性和优异的操作特性的磁存储器件。 该磁存储器件包括半导体衬底，形成在半导体衬底上方的晶体管，以及形成在覆盖衬底晶体管的层间绝缘膜上或之上的TMR元件。 该器件还包括埋在层间电介质膜中并连接到晶体管的源极/漏极扩散层的第一布线，埋在TMR元件下面的第二布线，同时覆盖层间电介质中的第一布线 并且其用于在写入期间向TMR元件施加电流产生的磁场，以及第三布线，连接到TMR元件的上表面并且被提供以跨越第二布线。 第三布线用于在写入期间向TMR元件施加电流磁场，并且还用于在读取期间使单元电流流动。 第二布线通过图案化技术形成，使得它的两个边缘被放置在TMR元件的图案之外。