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    Elevationally-extending string of memory cells and methods of forming an elevationally-extending string of memory cells
    113.
    发明授权
    Elevationally-extending string of memory cells and methods of forming an elevationally-extending string of memory cells 有权

    公开(公告)号：US11616075B2

    公开(公告)日：2023-03-28

    申请号：US17156241

    申请日：2021-01-22

    Applicant: Micron Technology, Inc.

    Inventor： John D. Hopkins ,  David Daycock

    IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/10

    Abstract: A method that is part of a method of forming an elevationally-extending string of memory cells comprises forming an intervening structure that is elevationally between upper and lower stacks that respectively comprise alternating tiers comprising different composition materials. The intervening structure is formed to comprise an elevationally-extending-dopant-diffusion barrier and laterally-central material that is laterally inward of the dopant-diffusion barrier and has dopant therein. Some of the dopant is thermally diffused from the laterally-central material into upper-stack-channel material. The dopant-diffusion barrier during the thermally diffusing is used to cause more thermal diffusion of said dopant into the upper-stack-channel material than diffusion of said dopant, if any, into lower-stack-channel material. Other embodiments, including structure independent of method, are disclosed.

    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    114.
    发明申请
    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20230062084A1

    公开(公告)日：2023-03-02

    申请号：US17475057

    申请日：2021-09-14

    Applicant: Micron Technology, Inc.

    Inventor： John D. Hopkins ,  Haoyu Li

    IPC: H01L27/11582 ,  H01L27/11556

    Abstract: A memory array comprising strings of memory cells comprises conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprising a vertical stack comprises alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Conducting material of a lower of the conductive tiers directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. The conducting material in the lower conductive tier comprises upper conductively-doped semiconductive material, lower conductively-doped semiconductive material, and intermediate material vertically there-between. Other embodiments, including method, are disclosed.

    METHODS OF FORMING MICROELECTRONIC DEVICES
    115.
    发明申请
    METHODS OF FORMING MICROELECTRONIC DEVICES 有权

    公开(公告)号：US20230061327A1

    公开(公告)日：2023-03-02

    申请号：US18047245

    申请日：2022-10-17

    Applicant: Micron Technology, Inc.

    Inventor： John D. Hopkins ,  Jordan D. Greenlee ,  Nancy M. Lomeli

    IPC: H01L27/11556 ,  H01L27/11582 ,  H01L23/538 ,  G11C5/06 ,  G11C5/02 ,  H01L27/11575

    Abstract: A method of forming a microelectronic device comprises forming a sacrificial material over a base structure. Portions of the sacrificial material are replaced with an etch-resistant material. A stack structure is formed over the etch-resistant material and remaining portions of the sacrificial material. The stack structure comprises a vertically alternating sequence of insulative material and additional sacrificial material arranged in tiers, and at least one staircase structure horizontally overlapping the etch-resistant material and having steps comprising horizontal ends of the tiers. Slots are formed to vertically extend through the stack structure and the remaining portions of the sacrificial material. The sacrificial material and the additional sacrificial material are selectively replaced with conductive material after forming the slots to respectively form lateral contact structures and conductive structures. Microelectronic devices, memory devices, and electronic systems are also described.

    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    116.
    发明申请
    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20230055422A1

    公开(公告)日：2023-02-23

    申请号：US17409476

    申请日：2021-08-23

    Applicant: Micron Technology, Inc.

    Inventor： Jordan D. Greenlee ,  John D. Hopkins ,  M. Jared Barclay ,  Andrew Li ,  Aireus Christensen

    IPC: G11C16/04 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

    Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. Laterally-spaced memory-block regions are formed that individually comprise a vertical stack comprising alternating first tiers and second tiers are formed directly above the conductor tier. Material of the first tiers is sacrificial and of different composition from material of the first tiers. Channel-material strings extend through the first tiers and the second tiers. Conducting material in a lowest of the first tiers is formed that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. A horizontally-elongated trench is formed between immediately-laterally-adjacent of the memory-block regions. The trenches extend downwardly into the conducting material. After forming the trenches, lateral-sidewall regions of the conducting material that are aside the individual trenches in the lowest first tier is doped with an impurity. The sacrificial material is etched from the first tiers through the trenches selectively relative to the doped lateral-sidewall regions of the conducting material. Other embodiments, including structure, are disclosed.

    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    117.
    发明申请
    Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20230054920A1

    公开(公告)日：2023-02-23

    申请号：US17409434

    申请日：2021-08-23

    Applicant: Micron Technology, Inc.

    Inventor： John D. Hopkins ,  Jordan D. Greenlee

    IPC: H01L27/11582 ,  H01L27/11556

    Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material-string constructions that extend through the insulative tiers and the conductive tiers into the conductor tier. The channel material of the channel-material-string constructions directly electrically couples to conductor material of the conductor tier. The conductor tier comprises islands comprising material of different composition from that of the conductor material of the conductor tier that surrounds individual of the islands. The islands are directly against bottoms of the channel-material-string constructions. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. Other aspects, including method, are disclosed.

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