Abstract:
To provide a light-emitting device or an input/output device with little unevenness in display luminance or high reliability and to provide an input/output device with high detection sensitivity, a light-emitting device is configured to include a first substrate, a light-emitting element over the first substrate, a first conductive layer over the light-emitting element, a first insulating layer over the first conductive layer, a second conductive layer over the first insulating layer, and a second substrate over the second conductive layer. The light-emitting element includes a first electrode over the first substrate, a layer containing a light-emitting organic compound over the first electrode, and a second electrode over the layer containing a light-emitting organic compound. The second electrode is electrically connected to the first and second conductive layers. The first conductive layer and the second electrode transmit light emitted from the light-emitting element. The resistance of the second conductive layer is lower than that of the second electrode.
Abstract:
Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected to two gate lines. One of the gate lines is electrically connected to a gate of a transistor included in each of the two subpixels, and the other gate line is electrically connected to a gate of a transistor included in the other subpixel. Display elements of the three subpixels are arranged in the same direction. Three pixel electrodes of the three subpixels are arranged in the same direction.
Abstract:
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.
Abstract:
Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.
Abstract:
A display device includes a plurality of pulse output circuits each of which outputs signals to one of the two kinds of scan lines and a plurality of inverted pulse output circuits each of which outputs, to the other of the two kinds of scan lines, inverted or substantially inverted signals of the signals output from the pulse output circuits. Each of the plurality of inverted pulse output circuits operates with at least two kinds of signals used for the operation of the plurality of pulse output circuits. Thus, through current generated in the inverted pulse output circuits can be reduced.
Abstract:
A low-power semiconductor device is provided. The semiconductor device includes a movable portion, a plurality of scan line driver circuits, and a control portion. The movable portion includes a plurality of regions driven by the plurality of scan line driver circuits. One of the scan line driver circuits is electrically connected to another one of the scan line driver circuits adjacent to the scan line driver circuit through a switch. The control portion has a function of supplying a start pulse to one scan line driver circuit selected from the plurality of scan line driver circuits. The movable portion can be folded between the plurality of regions.
Abstract:
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.
Abstract:
Transistors each include a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A driver circuit portion includes first to third wirings formed in the same step as the gate electrode, fourth to sixth wirings formed in the same step as the source electrode and the drain electrode, a seventh wiring formed in the same step as a pixel electrode, a first region where the second wiring intersects with the fifth wiring, and a second region where the third wiring intersects with the sixth wiring. The first wiring is connected to the fourth wiring through the seventh wiring. A distance between the wirings in the second region is longer than that in the first region.
Abstract:
A highly reliable semiconductor device in which a shift in the threshold voltage of a transistor due to deterioration is prevented is provided. The semiconductor device is formed using a sequential circuit including: a first transistor controlling the electrical connection between a first wiring and a second wiring; a second transistor and a third transistor in each of which a source and a drain are electrically connected to each other and which control the electrical connection between the second wiring and a third wiring; and a switch group controlling the electrical connection between a gate of the first transistor and the third wiring or a fourth wiring, the electrical connection between a gate of the second transistor and the third wiring or the fourth wiring, and the electrical connection between a gate of the third transistor and the third wiring or the fourth wiring in response to a control signal.
Abstract:
A semiconductor device which has reduced power consumption and includes a selection transistor is provided. A semiconductor device in which the number of wirings and terminals for inputting a power supply potential is reduced and which operates at high speed is provided. A buffer circuit connected to a gate line connected to a gate of the selection transistor has a function of generating a potential higher than a high power supply potential by using the high power supply potential and outputs the potential depending on the selection signal. A bootstrap circuit boosts a high power supply potential that is input to an inverter that is the closest to an output side among a plurality of inverters included in a buffer circuit. Further, by providing a delay circuit in the buffer circuit, the bootstrap circuit starts to boost a potential at the timing later than the input of the selection signal.