公开(公告)号：US20220223786A1

公开(公告)日：2022-07-14

申请号：US17667948

申请日：2022-02-09

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/06 ,  H01L43/08 ,  H03B15/00 ,  G11B5/39 ,  H01L29/82 ,  H01L27/105 ,  H01F10/32 ,  G11C11/18 ,  G11C11/16 ,  H01L43/04 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09

Abstract: A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

公开(公告)号：US20220109102A1

公开(公告)日：2022-04-07

申请号：US17488436

申请日：2021-09-29

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G01R33/09 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.

公开(公告)号：US20220077386A1

公开(公告)日：2022-03-10

申请号：US17463716

申请日：2021-09-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/04 ,  H01L43/06 ,  H01L27/22 ,  G11C11/16

Abstract: A magnetoresistance effect element includes: a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction; a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction. The thickness of the second ferromagnetic layer in the first direction is thinner than the minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction. The thickness of the magnetic body in the first direction is thicker than the minimum length of the magnetic body in a plane orthogonal to the first direction.

公开(公告)号：US20220006004A1

公开(公告)日：2022-01-06

申请号：US17269056

申请日：2020-03-05

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/04 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G06N3/063

Abstract: A magnetic recording array according to the present embodiment includes a plurality of spin elements, a first reference cell, and a second reference cell, wherein the plurality of spin elements, the first reference cell, and the second reference cell each have a wiring and a stacked body including a first ferromagnetic layer stacked on the wiring, wherein the electrical resistance of the wiring of the first reference cell is higher than the electrical resistance of the wiring of each spin element, and wherein the electrical resistance of the wiring of the second reference cell is lower than the electrical resistance of the wiring of each spin element.

公开(公告)号：US20210383853A1

公开(公告)日：2021-12-09

申请号：US17408707

申请日：2021-08-23

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  G06F7/544 ,  G06N3/063

Abstract: A magnetic recording array includes domain wall motion elements and wirings, the domain wall motion elements includes first, second, and third elements, each having a magnetic wall motion layer with first and second end portions, the second element has the second end portion closest to the first end portion of the first element, the third element has the second end portion closest or second closest to the first end portion of the first element, a first distance between the first end portion of the first element and the second end portion of the second element and a second distance between the first end portion of the first element and the second end portion of the third element are shorter than a third distance between the first end portion of the first element and the first end portion closest to the first end portion of the first element.

公开(公告)号：US20210351341A1

公开(公告)日：2021-11-11

申请号：US17282647

申请日：2019-04-08

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic element includes a first ferromagnetic layer, and a first wiring that faces the first ferromagnetic layer in a first direction. The first wiring has a wiring portion extending in a second direction different from the first direction, and a wide width portion having a wider width than the wiring portion in a third direction intersecting the second direction when viewed from the first direction. A center position of the wiring portion in the third direction and a center position of the first ferromagnetic layer in the third direction are different from each other.

公开(公告)号：US20210305498A1

公开(公告)日：2021-09-30

申请号：US17345084

申请日：2021-06-11

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Eiji KOMURA ,  Keita SUDA

IPC: H01L43/10 ,  G11C11/18 ,  G11C11/16 ,  H01L43/08 ,  H01L43/06

Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

公开(公告)号：US20210134503A1

公开(公告)日：2021-05-06

申请号：US17123514

申请日：2020-12-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01F10/32 ,  G01R33/09 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.

公开(公告)号：US20210083175A1

公开(公告)日：2021-03-18

申请号：US16629895

申请日：2018-08-31

Applicant: TDK CORPORATION

Inventor： Keita SUDA ,  Tomoyuki SASAKI

IPC: H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02

Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

公开(公告)号：US20210050266A1

公开(公告)日：2021-02-18

申请号：US17089194

申请日：2020-11-04

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Tomoyuki SASAKI

IPC: H01L21/8239 ,  G01R33/09 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.