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    Fluorescence correlation spectroscopy analyzer
    111.
    发明申请
    Fluorescence correlation spectroscopy analyzer 有权
    荧光相关光谱分析仪

    公开(公告)号：US20080174776A1

    公开(公告)日：2008-07-24

    申请号：US12000732

    申请日：2007-12-17

    Applicant: Takayuki Inoue ,  Tadashi Maruno ,  Fumio Iwase

    Inventor： Takayuki Inoue ,  Tadashi Maruno ,  Fumio Iwase

    IPC: G01N21/64

    CPC classification number: G01N21/6456 ,  G01J3/2803 ,  G01J3/2823 ,  G01J3/2889 ,  G01J3/4406 ,  G01J2003/2813 ,  G01J2003/282 ,  G01N21/645 ,  G01N2021/6417 ,  G01N2021/6423 ,  H04N5/3454 ,  H04N5/372

    Abstract: A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal. The data analyzer 16 inputs the detection signals based on the charges generated at the pixels, among the pixels of the CCD camera 15, that belong to an analyzed pixel set and computes autocorrelation functions of the input detection signals according to each pixel. A fluorescence correlation spectroscopy analyzer, which is enabled to perform fluorescence correlation spectroscopy analysis on multiple points of a measured sample simultaneously and at high speed, is thus provided.

    Abstract translation: 荧光相关光谱分析仪1配备有激发光照明光学系统21，荧光成像光学系统22，CCD照相机15和数据分析器16.激发光照射光学系统21将激发光照射到 测量样品S.荧光成像光学系统22将在测量样品S处产生的荧光图像成像到CCD照相机15的光电检测表面上。CCD照相机15根据照相机15对入射到光电检测表面上的荧光进行光电转换 并输出由光电转换产生的电荷作为来自输出端的检测信号。 数据分析器16基于在CCD摄像机15的像素中产生的属于分析像素组的像素产生的电荷输入检测信号，并根据每个像素计算输入检测信号的自相关函数。 因此，提供了可以同时进行高速度地对多个点进行荧光相关光谱分析的荧光相关光谱分析仪。

    Semiconductor device
    112.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20080001825A1

    公开(公告)日：2008-01-03

    申请号：US11812618

    申请日：2007-06-20

    Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

    Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

    IPC: H01Q1/38

    CPC classification number: G06K19/07749

    Abstract: In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

    Abstract translation: 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

    Cyclic tetrapeptide compound and use thereof
    113.
    发明申请
    Cyclic tetrapeptide compound and use thereof 审中-公开
    环状四肽化合物及其用途

    公开(公告)号：US20060229236A1

    公开(公告)日：2006-10-12

    申请号：US10500113

    申请日：2002-12-27

    Applicant: Shigeki Satoh ,  Yasuharu Urano ,  Kazuhiko Osoda ,  Mitsuru Hosaka ,  Kozo Sawada ,  Takayuki Inoue ,  Hiroaki Mori ,  Shoji Takagaki ,  Takao Fujimura ,  Hideaki Matsuoka ,  Katsuhiko Yoshizawa

    Inventor： Shigeki Satoh ,  Yasuharu Urano ,  Kazuhiko Osoda ,  Mitsuru Hosaka ,  Kozo Sawada ,  Takayuki Inoue ,  Hiroaki Mori ,  Shoji Takagaki ,  Takao Fujimura ,  Hideaki Matsuoka ,  Katsuhiko Yoshizawa

    IPC: A61K38/12 ,  C07K5/12

    CPC classification number: C07K5/126 ,  A61K38/12

    Abstract: A cyclic tetrapeptide compound of the formula (I): wherein R1 is hydrogen; R2 is lower alkyl, aryl, optionally substituted ar(lower)alkyl, heterocyclic(lower)alkyl, cyclo(lower)alkyl(lower)alkyl, lower alkylcarbamoyl(lower)alkyl or arylcarbamoyl(lower)alkyl; R3 and R4 are each independently hydrogen, lower alkyl, optionally substituted ar(lower)alkyl, optionally substituted heterocyclic(lower)alkyl or cyclo(lower)alkyl(lower)alkyl, or R3 and R4 are linked together to form lower alkylene or condensed ring, or one of R3 and R4 is linked to the adjacent nitrogen atom to form a ring; R5 is lower alkylene or lower alkenylene, Y is [wherein RY1 is hydrogen, halogen or optionally protected hydroxy, RY2 is hydrogen, halogen, lower alkyl or phenyl, and RY3 is hydrogen or lower alkyl]; R8 is hydrogen or lower alkyl; and n is an integer of 1 or 2, or a salt thereof.

    Abstract translation: 式（I）的环状四肽化合物：其中R 1是氢; R 2是低级烷基，芳基，任选取代的芳（低级）烷基，杂环（低级）烷基，环（低级）烷基（低级）烷基，低级烷基氨基甲酰基（低级）烷基或芳基氨基甲酰基 烷基; R 3和R 4各自独立地为氢，低级烷基，任选取代的芳（低级）烷基，任选取代的杂环（低级）烷基或环（低级）烷基（低级） ）烷基或R 3和R 4连接在一起形成低级亚烷基或稠环，或者R 3和R 3中的一个 > 4 与相邻的氮原子连接形成环; R 5是低级亚烷基或低级亚烯基，Y是[其中R Y1是氢，卤素或任选保护的羟基，R Y2是氢， 卤素，低级烷基或苯基，R 3 Y 3是氢或低级烷基]。 R 8是氢或低级烷基; n为1或2的整数，或其盐。

    High electron mobility epitaxial substrate
    114.
    发明申请
    High electron mobility epitaxial substrate 有权
    高电子迁移率外延衬底

    公开(公告)号：US20060076576A1

    公开(公告)日：2006-04-13

    申请号：US10540514

    申请日：2003-12-19

    Applicant: Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    Inventor： Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    IPC: H01L31/0328 ,  H01L21/336

    CPC classification number: H01L29/7785

    Abstract: A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9, wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.

    Abstract translation: 一种用于应变通道高电子迁移率场效应晶体管的化合物半导体外延基板，包括作为应变通道层6的InGaAs层和包含n型杂质的AlGaAs层作为背面侧和前侧电子供给层3和9，其中 通过优化应变通道层6的In组成和厚度，将77K处的应变通道层6的发射峰值波长设定为1030nm以上。

    Curved surface machining method and an apparatus thereof
    115.
    发明授权
    Curved surface machining method and an apparatus thereof 失效
    曲面加工方法及其装置

    公开(公告)号：US06955585B2

    公开(公告)日：2005-10-18

    申请号：US10934293

    申请日：2004-09-03

    Applicant: Mamoru Mitsuishi ,  Shinichi Warisawa ,  Kouichi Kuramoto ,  Takayuki Inoue

    Inventor： Mamoru Mitsuishi ,  Shinichi Warisawa ,  Kouichi Kuramoto ,  Takayuki Inoue

    IPC: B24C3/00 ,  B24C1/04 ,  B24C3/22 ,  B24C5/02 ,  B24C7/00 ,  B24C1/08

    CPC classification number: B24C1/04 ,  B24C3/22 ,  B24C5/02 ,  B24C7/0007

    Abstract: A curved surface machining method that performs finishing of the surface of a workpiece into a curved surface. The method includes the steps of: setting a workpiece in a rotating or stationary state in a water tank filled with an abrasive-containing solution into which an abrasive with a grain size of less than 1 μm has been admixed; and spraying a high-speed fluid in the abrasive-containing solution while a position, direction, and angle thereof is controlled relative to the workpiece, thus grinding and finishing the surface of the workpiece to an intended surface roughness and profile accuracy.

    Abstract translation: 一种曲面加工方法，其将工件的表面精加工成曲面。 该方法包括以下步骤：在填充有磨料的溶液的水箱中将旋转或静止状态的工件设置在其中混合了粒度小于1μm的磨料的混合物; 并将高速流体喷射到含磨料的溶液中，同时相对于工件控制其位置，方向和角度，从而将工件的表面研磨和精加工到预期的表面粗糙度和轮廓精度。

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