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公开(公告)号：US08438585B2
公开(公告)日：2013-05-07
申请号：US13366554
申请日：2012-02-06
申请人： Daisuke Takasaka , Tetsuya Tamura , Masaki Nakatani , Katsuo Ichinohe , Rikiya Ueshima , Tomohiro Kobayashi , Yoshiyuki Nakagawa , Yasuhide Mizuta
发明人： Daisuke Takasaka , Tetsuya Tamura , Masaki Nakatani , Katsuo Ichinohe , Rikiya Ueshima , Tomohiro Kobayashi , Yoshiyuki Nakagawa , Yasuhide Mizuta
IPC分类号： G11B21/02
CPC分类号： G11B7/08582 , G11B7/22
摘要： A drive device for an optical disc apparatus, wherein the tooth comprises a tooth body fixed to an optical pickup; support pieces projecting from the tooth body toward a lead screw; resin spring pieces extending from the support pieces in a direction orthogonal to the axial direction of the lead screw; a plate part formed in a direction parallel to the axial direction of the lead screw from the resin spring pieces; meshing cogs formed on the plate part on the side near the lead screw; a cover projecting above the lead screw from the plate part disposed above the meshing cogs, straddling the lead screw, and bending sharply downward at the distal end; and a handle projecting from the tooth body.
摘要翻译： 一种用于光盘装置的驱动装置，其中所述齿包括固定到光拾取器的齿体; 从齿体向导螺杆突出的支撑件; 在与所述导螺杆的轴向正交的方向上从所述支撑片延伸的树脂弹簧片; 从所述树脂弹簧片沿与所述导螺杆的轴向平行的方向形成的板部; 啮合齿形成在靠近导螺杆的一侧的板部分上; 从设置在啮合齿轮上方的板部分的导螺杆上方突出的盖子，跨越导螺杆，并在远端处向下弯曲; 以及从牙体突出的手柄。
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112.发明申请ORGANIC EL ELEMENT AND METHOD FOR MANUFACTURING THE ORGANIC EL ELEMENT AND ORGANIC EL ELEMENT EVALUATING METHOD 审中-公开有机EL元件和有机EL元件的制造方法和有机EL元件评估方法公开(公告)号：US20100314995A1
公开(公告)日：2010-12-16
申请号：US12526268
申请日：2008-02-08
申请人： Tomiki Ikeda , Motoi Kinoshita , Tomohiro Kobayashi , Kyoko Yamamoto , Shin-ya Tanaka , Fumihiro Sakano
发明人： Tomiki Ikeda , Motoi Kinoshita , Tomohiro Kobayashi , Kyoko Yamamoto , Shin-ya Tanaka , Fumihiro Sakano
CPC分类号： H01L51/5275 , G02B19/0028 , G02B19/0061 , H01L51/0076
摘要： Provided are an organic EL device having improved conductivity of an anode compared with conventional organic EL devices, and a method for manufacturing such organic EL device. The organic EL device is provided with a layer-like optical element (40), which at least contains a liquid crystal material and a dye, has a refractive index distribution based on orientation of liquid crystal molecules constituting the liquid crystal material, and has the refractive index distribution fixed; a substrate (11) which can transmit visible light; a light emitting layer (60) composed of an organic EL material; a cathode (70); and an anode (50). Each of the cathode (70) and the anode (60) is formed layer-like. The organic EL device is further provided with an alignment film (12), and the alignment film (12) and the optical element (40) are in contact with each other.
摘要翻译： 提供一种与常规有机EL器件相比具有改善的阳极电导率的有机EL器件，以及制造这种有机EL器件的方法。 有机EL元件设置有至少包含液晶材料和染料的层状光学元件（40），其具有基于构成液晶材料的液晶分子的取向的折射率分布，并且具有 折射率分布固定; 可透射可见光的基板（11）; 由有机EL材料构成的发光层（60） 阴极（70）; 和阳极（50）。 阴极（70）和阳极（60）中的每一个都是层状的。 有机EL器件还设置有取向膜（12），并且取向膜（12）和光学元件（40）彼此接触。
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公开(公告)号：US20100136482A1
公开(公告)日：2010-06-03
申请号：US12628794
申请日：2009-12-01
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041
摘要： A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.
摘要翻译： 提供了抗蚀剂组合物，其包含（A）酰基保护的六氟醇结构的添加剂聚合物，（B）具有衍生自内酯环，羟基和/或马来酸酐的结构的基础聚合物，所述基础聚合物在碱性显影剂中变得可溶 酸的作用，（C）光致酸发生剂，和（D）有机溶剂。 添加剂聚合物对波长高达200nm的辐射是透明的，并且其性质可以通过选择聚合物结构来定制。
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公开(公告)号：US07601479B2
公开(公告)日：2009-10-13
申请号：US10936753
申请日：2004-09-09
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38 , C08F224/00
CPC分类号： G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1) to (4) wherein R1, R3, R4 and R7 are hydrogen or methyl, R2 is an acid labile group, R5 and R6 are hydrogen or hydroxyl, and R8 is a lactone structure group and having a Mw of 1,000-50,000 is provided. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and etching resistance and lends itself to lithographic micropatterning with electron beams or deep UV.
摘要翻译： 包含式（1）至（4）的重复单元的聚合物，其中R1，R3，R4和R7是氢或甲基，R2是酸不稳定基团，R5和R6是氢或羟基，R8是内酯结构基团， 提供Mw为1,000-50,000的Mw。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和耐蚀刻性，并且使其自身适用于具有电子束或深紫外线的光刻微图案。
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公开(公告)号：US20090208873A1
公开(公告)日：2009-08-20
申请号：US12371455
申请日：2009-02-13
IPC分类号： G03F7/20 , C08F118/02 , G03F7/039
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0392 , G03F7/0397
摘要： A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects.
摘要翻译： 通过使具有羟基部分被保护的六氟醇侧基的单体和具有酸不稳定基团的单体的共聚合得到的聚合物可用作浸渍光刻用光致抗蚀剂组合物的添加剂。 当通过浸渍光刻处理时，抗蚀剂组合物表现出良好的拒水性和水滑动，并且产生很少的显影缺陷。
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116.发明授权Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method 有权光生酸化合物，化学放大阳性抗蚀剂材料和图案形成方法公开(公告)号：US07303852B2
公开(公告)日：2007-12-04
申请号：US10375773
申请日：2003-02-27
CPC分类号： G03F7/0045 , C07C311/48 , C07D333/46 , C07D335/02 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/114 , Y10S430/115
摘要： The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.
摘要翻译： 本发明提供了一种高分辨率抗蚀剂材料，其包括相对于300nm以下的高能量射线具有高灵敏度和高分辨率的酸发生剂，具有小的线边缘粗糙度，并且具有优异的热稳定性和储存稳定性 ，并提供使用该抗蚀剂材料的图案形成方法。 本发明还提供了一种化学放大正性抗蚀剂材料，其包括基础树脂，酸产生剂和其中酸产生剂产生含氟基团的亚烷基亚胺酸的溶剂，并且提供了图案形成方法，包括将抗蚀剂材料施加到 基板，通过热处理后的光掩模进行曝光于波长为300nm以下的高能射线的工序，以及通过热处理后的显影液进行显影的工序。
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公开(公告)号：US20050284502A1
公开(公告)日：2005-12-29
申请号：US11159095
申请日：2005-06-23
摘要： A rinse comprising a water-soluble polymer is suited for use in a lithographic process. In the lithographic process for the fabrication of semiconductor integrated circuits involving the exposure of resist to various types of radiation (e.g., UV, deep UV, vacuum UV, electron beams, x-rays, and laser beams), the invention can prevent resist insoluble components from generating on and attaching to the resist film or substrate, and if insoluble components attach, can effectively remove the insoluble components, thus avoiding a lowering of production yield by defects resulting from the insoluble components.
摘要翻译： 包含水溶性聚合物的漂洗剂适用于光刻工艺。 在涉及对各种类型的辐射（例如UV，深UV，真空UV，电子束，X射线和激光束）的抗蚀剂曝光的半导体集成电路的制造的光刻工艺中，本发明可以防止抗蚀剂不溶 在抗蚀剂膜或基材上产生和附着的组分，如果不溶性组分附着，可以有效地除去不溶性成分，从而避免由不溶性成分引起的缺陷导致产率降低。
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公开(公告)号：US06878508B2
公开(公告)日：2005-04-12
申请号：US10193224
申请日：2002-07-12
CPC分类号： G03F7/0395 , G03F7/40
摘要： A resist patterning process is provided comprising the steps of (a) applying a resist composition onto a substrate to form a resist film, (b) prebaking the resist film, (c) exposing the prebaked resist film to a pattern of radiation, (d) post-exposure baking the exposed resist film, (e) developing the resist film to form a resist pattern, and (f) post baking the resist pattern for causing thermal flow. The resist composition contains a polymer comprising structural units of formula [I] in a backbone and having acid labile groups on side chains as a base resin and a photoacid generator. X1 and X2 are —O—, —S—, —NR—, —PR— or —CR2—, R is H or C1-20 alkyl, and m is 0 or an integer of 1 to 3. The invention is effective for improving the degree of integration of semiconductor LSI.
摘要翻译： 提供了抗蚀剂图案化工艺，其包括以下步骤：（a）将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，（b）预烘烤抗蚀剂膜，（c）将预焙蚀的抗蚀剂膜暴露于辐射图案，（d ）曝光后烘烤曝光的抗蚀剂膜，（e）显影抗蚀剂膜以形成抗蚀剂图案，和（f）后烘烤抗蚀图案以引起热流。 抗蚀剂组合物含有在骨架中包含式[I]结构单元的聚合物，并且在侧链上具有酸不稳定基团作为基础树脂和光致酸发生剂.X 1和X 2是-O-，-S - ， - NR - ， - PR-或-CR2-，R为H或C 1-20烷基，m为0或1〜3的整数。本发明对于提高半导体LSI的集成度是有效的。
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公开(公告)号：US06512067B2
公开(公告)日：2003-01-28
申请号：US09998200
申请日：2001-12-03
IPC分类号： C08F12400
CPC分类号： G03F7/0395 , C08F32/08 , G03F7/0045
摘要： A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1, R2, R3 and R4 are H or C1-15 alkyl, R1 and R2, and R3 and R4, taken together, may form a ring; R5 and R6 are H, C1-15 alkyl, acyl or alkylsulfonyl groups or C2-15 alkoxycarbonyl or alkoxyalkyl groups which may have halogen substituents; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
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公开(公告)号：US5808504A
公开(公告)日：1998-09-15
申请号：US689834
申请日：1996-08-14
CPC分类号： H03K17/0828 , H03K17/0406 , H03K2217/0036
摘要： The cutoff process of a collector current of an insulated gate transistor is divided into an emitter-to-collector voltage recovery period and a collector current cutoff period. During the emitter-to-collector voltage recovery period the resistance of a gate resistor of the transistor is reduced, and during the collector current cutoff period the resistance of the gate resistor is increased. With this arrangement, the cutoff time is shortened, thereby reducing switching loss and suppressing surge voltage.
摘要翻译： 绝缘栅晶体管的集电极电流的截止过程被分为发射极到集电极电压恢复周期和集电极电流截止周期。 在发射极到集电极电压恢复期间，晶体管的栅极电阻的电阻降低，并且在集电极电流截止期间，栅极电阻的电阻增加。 通过这种布置，截止时间缩短，从而降低开关损耗并抑制浪涌电压。
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