公开(公告)号：US06505850B2

公开(公告)日：2003-01-14

申请号：US09403471

申请日：1999-12-29

申请人： Rudolf Helfrich ,  Norbert Vath ,  Thomas Klein ,  Bernhard Kress ,  Norbert Wolleb ,  Tomás Sieira ,  Hans Martin Hauck

发明人： Rudolf Helfrich ,  Norbert Vath ,  Thomas Klein ,  Bernhard Kress ,  Norbert Wolleb ,  Tomás Sieira ,  Hans Martin Hauck

IPC分类号： B60R2116

CPC分类号： B60R21/21656

摘要： An airbag covering cap including a support layer and a covering layer of different elasticities, having at least one tear-off line along which the airbag covering cap tears open when the airbag is deployed. The covering layer is weakened by a groove in the region of the tear-off line and the support layer extends into this groove. The covering layer has a section adjacent to the section of the support layer, which extends into said support layer. The edge between the sections of the support and covering layers, each extending into the other layer is configured as a tear-off edge.

摘要翻译： 一种安全气囊覆盖帽，其包括支撑层和不同弹性的覆盖层，具有至少一个撕裂线，当气囊展开时，至少一个撕裂线穿过该气囊覆盖帽撕开。 覆盖层在撕离线的区域中由凹槽削弱，并且支撑层延伸到该凹槽中。 覆盖层具有与支撑层的延伸到所述支撑层中的部分相邻的部分。 每个延伸到另一层的支撑层和覆盖层的部分之间的边缘被配置为撕裂边缘。

公开(公告)号：US06178523B1

公开(公告)日：2001-01-23

申请号：US09096696

申请日：1998-06-12

申请人： Thomas Klein

发明人： Thomas Klein

IPC分类号： G06F1100

CPC分类号： G06F11/1441

摘要： A battery-operable portable electronic device, having a removable main power source and an auxiliary power source, generates a power failure interrupt signal when it detects a power failure of the removable main power source. Upon detection of the power failure, the electronic device enters a power down mode in which it monitors recovery from the power failure. The electronic device monitors recovery from the power failure by using a battery check routine it pushes on the stack of a microcontroller, and pops off the battery check routine from the stack upon determining a stable recovery, while returning to an exact point in a main program it left when it detected the power failure, the exact point in the main program being represented by a program counter value automatically pushed on the stack upon occurance of the power failure interrupt signal.

摘要翻译： 具有可拆卸主电源和辅助电源的电池可操作便携式电子设备在检测到可拆卸主电源的电源故障时产生停电中断信号。 在检测到电源故障时，电子设备进入断电模式，在该模式下，它监视电源故障的恢复。 电子设备通过使用电池检查程序来监视从电源故障的恢复，它按下微控制器的堆栈，并且在确定稳定的恢复时，从堆栈中弹出电池检查程序，同时返回到主程序中的确切点 当它检测到电源故障时，它离开，主程序中的精确点由在电源故障中断信号发生时自动推送到堆栈上的程序计数器值表示。

公开(公告)号：US6045859A

公开(公告)日：2000-04-04

申请号：US077751

申请日：1998-11-12

申请人： Thomas Klein ,  Thomas Staffel ,  Lysander Fischer ,  Richard Walter ,  Peter Patzelt

发明人： Thomas Klein ,  Thomas Staffel ,  Lysander Fischer ,  Richard Walter ,  Peter Patzelt

IPC分类号： B44F9/04 ,  C04B41/51 ,  C04B41/88 ,  C23C18/08 ,  B05D3/02

CPC分类号： C04B41/009 ,  B44F9/04 ,  C04B41/5116 ,  C04B41/88 ,  C23C18/08 ,  C04B2111/82

摘要： The present invention relates to a method for coloring ceramic surfaces, wherein the surfaces are treated with an aqueous solution of alkali metal or ammonium dithiosulphatoaurate(I) with a gold concentration of 0.1-10% by weight, the water is evaporated and the dithiosulphatoaurate(I) is decomposed at temperatures of 300-1400.degree. C.

摘要翻译： PCT No.PCT / EP96 / 05312 Sec。 371日期：1998年11月12日 102（e）1998年11月12日日期PCT 1996年11月30日PCT PCT。 公开号WO97 / 21646 日期：1996年6月19日本发明涉及一种着色陶瓷表面的方法，其中表面用金浓度为0.1-10重量％的碱金属或二硫代硫代月桂酸铵（I）的水溶液处理，水是 蒸发，二硫代硫酸月桂酸酯（I）在300-1400℃的温度下分解

公开(公告)号：US5694238A

公开(公告)日：1997-12-02

申请号：US520667

申请日：1995-08-28

申请人： Hans Lausen ,  Lutz Bersiner ,  Thomas Klein

发明人： Hans Lausen ,  Lutz Bersiner ,  Thomas Klein

IPC分类号： H01S3/067 ,  H04B10/27 ,  H04B10/275 ,  H04B10/291 ,  G02B6/30 ,  H01S3/16

CPC分类号： H04B10/27 ,  H01S3/06754 ,  H04B10/275 ,  H04B10/291 ,  H04B10/2912 ,  H01S3/06787

摘要： An integrated optical circuit is described for coupling an optical fiber amplifier with two or four terminals in such a way that the optical fiber amplifier is supplied with optical signals in a prescribed direction, and the optical signals are coupled out to an optical network via a directed directional coupler. The necessary optical switches, couplers, terminals and light guides are integrated into the integrated optical circuit.

摘要翻译： 描述了一种用于将光纤放大器与两个或四个端子耦合的集成光电路，使得光纤放大器以规定的方向被提供光信号，并且光信号经由定向信号耦合到光网络 定向耦合器。 所需的光开关，耦合器，端子和光导集成在集成光电路中。

公开(公告)号：US4413401A

公开(公告)日：1983-11-08

申请号：US280984

申请日：1981-07-06

申请人： Thomas Klein ,  Andrew G. Varadi ,  Charles E. Boettcher

发明人： Thomas Klein ,  Andrew G. Varadi ,  Charles E. Boettcher

IPC分类号： H01L21/8234 ,  H01L27/108 ,  H01L29/94 ,  B01J17/00 ,  H01L21/265

CPC分类号： H01L21/8234 ,  H01L27/10805 ,  H01L29/94

摘要： This disclosure is directed to an improved semiconductor capacitor structure especially useful in an integrated semiconductor structure with an MOS device and fabrication methods therefor. This semiconductor capacitor is particularly useful for forming the capacitor portion of a single MOS memory cell structure in a dynamic MOS random access memory which utilizes one MOS device in combination with a capacitor. In one specific disclosure embodiment, the semiconductor capacitor comprises a boron (P) implanted region in a substrate of P- type conductivity followed by a shallow arsenic (N) implant into the boron implanted region. The boron implanted region provides a P type conductivity which has a higher concentration of P type impurities than the concentration of impurities contained in the substrate which is of P- type conductivity. Thus, the boron implanted region performs the important function of preventing a surface N type inversion layer from being formed across the semiconductor surface beneath the silicon dioxide insulating layer which could occur across the substrate P- surface if the arsenic implant region was made into the P- substrate without the P type boron implant. The arsenic implant is of N type conductivity and has a higher concentration of impurities than the boron implant region. The dielectric portion of the semiconductor capacitor is the portion of the silicon dioxide layer located on the surface of the arsenic implanted region. A doped polysilicon electrode is formed over this portion of the silicon dioxide insulating layer and provides the other plate of the capacitor structure. In another embodiment that is disclosed, this above described semiconductor capacitor structure or device is combined with an MOS device in a single integrated semiconductor structure in order to provide a single MOS memory cell for dynamic random access memory chip utilizing the MOS device and the capacitor. Preferably, the semiconductor capacitor is shown as a connected extension of either the source or drain region of the MOS device.

公开(公告)号：US4104784A

公开(公告)日：1978-08-08

申请号：US783914

申请日：1977-04-01

申请人： Thomas Klein

发明人： Thomas Klein

IPC分类号： H01L21/033 ,  H01L21/265 ,  H01L21/8236 ,  B01J17/00

CPC分类号： H01L21/26513 ,  H01L21/033 ,  H01L21/8236

摘要： A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.

摘要翻译： 一种新颖的MOSFET电路和利用双离子注入工艺制造低电压高性能n沟道器件的制造方法，该器件包括与耗尽晶体管负载相结合的增强晶体管反相器。 该过程从高电阻率材料开始，并且使用第一离子注入工艺来掺杂场区域并为增强器件提供所需的阈值电压。 使用第二离子注入来掺杂耗尽装置的通道区域。