SHIFT REGISTER AND DISPLAY DEVICE HAVING THE SAME
    121.
    发明申请
    SHIFT REGISTER AND DISPLAY DEVICE HAVING THE SAME 有权
    移位寄存器和具有该寄存器的显示器件

    公开(公告)号:US20070146289A1

    公开(公告)日:2007-06-28

    申请号:US11535524

    申请日:2006-09-27

    Abstract: A shift register includes a plurality of stages connected to one another to sequentially generate output signals. Each of the stages has a plurality of output terminals, and each of the output terminals is connected to at least two gate lines and outputs a first output voltage alternately to the at least two gate lines to turn on thin film transistors.

    Abstract translation: 移位寄存器包括彼此连接的多个级,以顺序地产生输出信号。 每个级具有多个输出端子,并且每个输出端子连接到至少两条栅极线并且交替地向至少两个栅极线输出第一输出电压以导通薄膜晶体管。

    single crystalline silicon wafer, ingot, and producing method thereof
    123.
    发明授权
    single crystalline silicon wafer, ingot, and producing method thereof 有权
    单晶硅晶片,锭及其制造方法

    公开(公告)号:US06521316B2

    公开(公告)日:2003-02-18

    申请号:US09742215

    申请日:2000-12-22

    CPC classification number: C30B29/06 C30B15/203 C30B15/206 Y10T428/21

    Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

    Abstract translation: 本发明涉及一种单晶硅锭,单晶晶片及其制造方法,该方法能够减少大的缺陷面积,同时增加聚集的空位点区域的微空缺缺陷面积, 这是通过提供晶锭生长和冷却的均匀条件以及通过调整生长锭生长的牵引速率来产生中心轴和氧化诱发的堆垛层错环之间的区域,因此氧化诱导堆垛层错环只存在 在晶锭半径的边缘。

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