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    INVERSE REINFORCEMENT LEARNING BY DENSITY RATIO ESTIMATION
    121.
    发明申请
    INVERSE REINFORCEMENT LEARNING BY DENSITY RATIO ESTIMATION 审中-公开

    公开(公告)号：US20170213151A1

    公开(公告)日：2017-07-27

    申请号：US15329690

    申请日：2015-08-07

    Applicant: Okinawa Institute of Science and Technology School Corporation

    Inventor： Eiji UCHIBE ,  Kenji DOYA

    IPC: G06N99/00 ,  G06N7/00

    CPC classification number: G06N20/00 ,  G06N7/005

    Abstract: A method of inverse reinforcement learning for estimating cost and value functions of behaviors of a subject includes acquiring data representing changes in state variables that define the behaviors of the subject; applying a modified Bellman equation given by Eq. (1) to the acquired data: q(x)+gV(y)−V(x)=−1n{pi(y|x))/(p(y|x)} (1) where q(x) and V(x) denote a cost function and a value function, respectively, at state x, g represents a discount factor, and p(y|x) and pi(y|x) denote state transition probabilities before and after learning, respectively; estimating a density ratio pi(y|x)/p(y|x) in Eq. (1); estimating q(x) and V(x) in Eq. (1) using the least square method in accordance with the estimated density ratio pi(y|x)/p(y|x), and outputting the estimated q(x) and V(x).

    Spirooxindole derivative and process for producing the same
    127.
    发明授权
    Spirooxindole derivative and process for producing the same 有权
    螺氧基吲哚衍生物及其制备方法

    公开(公告)号：US09309261B2

    公开(公告)日：2016-04-12

    申请号：US14431935

    申请日：2013-10-04

    Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

    Inventor： Hai-Lei Cui ,  Fujie Tanaka

    IPC: C07D491/107 ,  A61K31/407

    CPC classification number: C07D491/107

    Abstract: Disclosed is a compound of formula I: wherein R1?, R2?, R3?, R4?, R5?, n and m are defined herein. The compound of formula I is prepared by a concise, catalytic enantioselective formal hetero-Diels-Alder (hDA) reactions of enones with isatins and is useful for making pharmaceutical composition for the treatment of proliferative diseases.

    Abstract translation: 公开了式I的化合物：其中R 1，R 2，R 3，R 4，R 5，n和m如本文所定义。 式I的化合物通过烯酮与异硬脂酸酯的简明的催化对映选择性形式的异二聚体 - 狄尔斯（hDA）反应制备，并且可用于制备用于治疗增殖性疾病的药物组合物。

    METAL INDUCED NANOCRYSTALLIZATION OF AMORPHOUS SEMICONDUCTOR QUANTUM DOTS
    128.
    发明申请
    METAL INDUCED NANOCRYSTALLIZATION OF AMORPHOUS SEMICONDUCTOR QUANTUM DOTS 有权
    非晶半导体量子点的金属诱导纳米结构

    公开(公告)号：US20160042948A1

    公开(公告)日：2016-02-11

    申请号：US14774226

    申请日：2014-03-07

    Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

    Inventor： Singh VIDYA DHAR ,  Cathal CASSIDY ,  Mukhles Ibrahim SOWWAN

    IPC: H01L21/02 ,  H01L29/04 ,  H01L29/16

    CPC classification number: H01L21/02658 ,  C01B33/021 ,  C30B1/023 ,  C30B28/02 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/16

    Abstract: A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semi-conductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.

    Abstract translation: 形成结晶化半导体颗粒的方法包括：在真空聚集室中形成非晶半导体颗粒; 将形成在真空聚集室中的非晶半导体颗粒输送到其中保持基板的真空沉积室; 以及将金属催化剂的蒸气施加到所述非晶半导体颗粒上，同时仍然在所述真空沉积室中转移到所述基板上，以在所述运输过程中经由所述金属催化剂引起至少部分所述非晶半导体颗粒的结晶，由此沉积 将结合了金属催化剂的半导体颗粒结合到基板上。

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