3D STORAGE ARCHITECTURE WITH TIER-SPECIFIC CONTROLS

    公开(公告)号:US20220122655A1

    公开(公告)日:2022-04-21

    申请号:US17071449

    申请日:2020-10-15

    Applicant: Arm Limited

    Abstract: A three-dimensional (3D) storage circuit includes two or more tiers of semiconductor dies, and a storage array of bitcells distributed on the two or more tiers to form a plurality of storage subarrays. One of the storage subarrays is arranged on a respective one of the tiers. Row and column replica/dummy tracking cells are arranged on each of the tiers. A timing circuit is coupled to the tracking cells of each of the tiers. In response to receipt of tier-specific trim bits for each of the tiers, the timing circuit independently controls a timing and/or voltage state of each of the tiers during an access operation of the 3D storage circuit to account for process and/or thermal variation between tiers of the 3D storage circuit.

    Slew-Load Characterization
    124.
    发明申请

    公开(公告)号:US20210333320A1

    公开(公告)日:2021-10-28

    申请号:US16857144

    申请日:2020-04-23

    Applicant: Arm Limited

    Abstract: Various implementations described herein are related to a method for constructing integrated circuitry and identifying input signal paths, internal signal paths and output signal paths associated with the integrated circuitry. The method may include generating a timing table for slew-load characterization of the input signal paths, the internal signal paths and the output signal paths. The method may include simulating corner points for the timing table, building diagonal points for the timing table based on the simulated corner points, and building remaining points for the timing table based on the simulated corner points and the diagonal points.

    Memory Multiplexing Techniques
    126.
    发明申请

    公开(公告)号:US20210193195A1

    公开(公告)日:2021-06-24

    申请号:US16725779

    申请日:2019-12-23

    Applicant: Arm Limited

    Abstract: Various implementations described herein are related to a device having memory circuitry and multiplexer circuitry. The memory circuitry may include a single bank of memory cells that are arranged in multiple columns, and each column of the multiple columns may provide singe-bit data. The multiplexer circuitry may include multiplexer logic that receives the single-bit data from each column of the multiple columns and provides selected data as output data.

    Level shift latch circuitry
    128.
    发明授权

    公开(公告)号:US11005461B2

    公开(公告)日:2021-05-11

    申请号:US16004009

    申请日:2018-06-08

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to an integrated circuit having first devices arranged to operate as a latch. The first devices may include inner devices and outer devices. The integrated circuit may include second devices coupled to the first devices and arranged to operate as a level shifter. The second devices may include upper devices and lower devices. The lower devices may be cross-coupled to gates of the inner devices and the upper devices. The integrated circuit may include input signals applied to gates of the outer devices and the lower devices to thereby generate output signals from the outputs of the lower devices that are applied to the gates of the inner devices and the upper devices to activate latching of the output signals.

    Error detection and correction circuitry

    公开(公告)号:US10984863B2

    公开(公告)日:2021-04-20

    申请号:US15959048

    申请日:2018-04-20

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to an integrated circuit having an array of bitcells. The integrated circuit may include latch circuitry having a latch for each row of bitcells that latches valid match data into the latch for each row of bitcells. The integrated circuit may include priority encoding circuitry that receives the valid match data from the latch for each row of bitcells. The integrated circuit may include first logic circuitry coupled between the array of bitcells and the priority encoding circuitry to assist with providing the valid match data to the latch circuitry.

    Configurable integrated circuits
    130.
    发明授权

    公开(公告)号:US10978141B1

    公开(公告)日:2021-04-13

    申请号:US16698851

    申请日:2019-11-27

    Applicant: Arm Limited

    Abstract: According to one implementation of the present disclosure, an integrated circuit includes first and second word-line decoder circuitry, two or more memory instances coupled to the first and second word-line decoder circuitry; and a control block circuitry coupled to the first and second word-line decoder circuitry and the two or more memory instances. Also, a pin bus enabled in the control block circuitry may be configured to at least partially control selection of one or more of the two or more memory instances.

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