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公开(公告)号：US07593193B2
公开(公告)日：2009-09-22
申请号：US11847496
申请日：2007-08-30
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。
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公开(公告)号：US07547934B2
公开(公告)日：2009-06-16
申请号：US11862966
申请日：2007-09-27
申请人： Yoshiaki Saito
发明人： Yoshiaki Saito
IPC分类号： H01L27/108
CPC分类号： H01L43/08 , G11C11/16 , H01L27/228
摘要： It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.
摘要翻译： 即使元件小型化并且即使重复任意次数也保持稳定的磁畴，可以获得优异的热稳定性。 磁阻效应元件包括：磁化钉扎层，其包括具有在垂直于其膜表面的方向上定向的旋转力矩的磁性膜，并沿着该方向固定; 具有在垂直于其膜表面的方向上定向的旋转力矩的磁记录层; 形成在磁化固定层和磁记录层之间的非磁性层; 以及形成在所述磁化钉扎层的至少侧表面上的反铁磁膜。
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公开(公告)号：US07511991B2
公开(公告)日：2009-03-31
申请号：US11750856
申请日：2007-05-18
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译： 根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道 设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线， 辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流
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公开(公告)号：US07355824B2
公开(公告)日：2008-04-08
申请号：US10976840
申请日：2004-11-01
申请人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
发明人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/224 , H01L27/228 , Y10T428/1114
摘要： The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy. A peak-to-peak maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.
摘要翻译： 磁阻效应元件本发明涉及磁阻效应元件，其具有大的MR比，即使其尺寸减小也具有良好的热稳定性和小的开关磁场;以及使用磁阻效应元件的磁存储器。 磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。 存储层的每个铁磁层由Ni-Fe-Co三元合金形成。 存储层和隧道势垒层之间的界面上的峰 - 峰最大表面粗糙度以及磁性膜和隧道势垒层之间的界面为0.4nm以下。
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125.发明授权Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage 有权多层磁性开关元件包括具有由施加电压引起的磁化的磁性半导体层公开(公告)号：US07349247B2
公开(公告)日：2008-03-25
申请号：US10918396
申请日：2004-08-16
申请人： Yoshiaki Saito
发明人： Yoshiaki Saito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/15 , G11C11/18 , G11C2213/74 , G11C2213/75 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic switching element includes: a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a magnetic field from the ferromagnetic layer reaches, where the magnetic semiconductor layer changes its state from a paramagnetic state to a ferromagnetic state by applying a voltage thereto, and a magnetization corresponding to the magnetization of the ferromagnetic layer is induced in the magnetic semiconductor layer by applying a voltage to the magnetic semiconductor layer.
摘要翻译： 磁性开关元件包括：铁磁层，其在一个方向上基本上被固定在磁化中; 以及设置在来自铁磁性层的磁场到达的范围内的磁性半导体层，其中磁性半导体层通过向其施加电压而将其状态从顺磁性状态改变为铁磁性状态，并且对应于 通过向磁性半导体层施加电压，在磁性半导体层中感应铁磁层。
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公开(公告)号：US20080062580A1
公开(公告)日：2008-03-13
申请号：US11846040
申请日：2007-08-28
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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公开(公告)号：US20070253120A1
公开(公告)日：2007-11-01
申请号：US11737379
申请日：2007-04-19
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , H01F10/132 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L27/228 , H01L43/08
摘要： It is possible to provide a magnetoresistive effect element which has thermal stability even if it is made fine and in which the magnetization in the magnetic recording layer can be inverted at a low current density. A magnetoresistive effect element includes: a magnetization pinned layer having a magnetization pinned in a direction; a magnetization free layer of which magnetization direction is changeable by injecting spin-polarized electrons into the magnetization free layer; a tunnel barrier layer provided between the magnetization pinned layer and the magnetization free layer; a first antiferromagnetic layer provided on the opposite side of the magnetization pinned layer from the tunnel barrier layer; and a second antiferromagnetic layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and which is thinner in thickness than the first antiferromagnetic layer.
摘要翻译： 可以提供一种具有热稳定性的磁阻效应元件，即使其变细，并且磁记录层中的磁化可以以低电流密度反转。 磁阻效应元件包括：具有沿方向固定的磁化的磁化固定层; 通过将自旋极化电子注入到磁化自由层中，磁化方向可变化的磁化自由层; 设置在磁化固定层和磁化自由层之间的隧道势垒层; 第一反铁磁层，设置在与所述隧道势垒层的所述磁化被钉扎层的相对侧上; 以及第二反铁磁层，其设置在所述磁化自由层的与所述隧道势垒层相反的一侧，并且其厚度比所述第一反铁磁性层更薄。
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128.发明授权Resin-made interior member for opening and closing body and molding die and molding method therefor 有权用于打开和关闭体的树脂制内部构件和成型模具及其成型方法公开(公告)号：US07270863B2
公开(公告)日：2007-09-18
申请号：US10513863
申请日：2003-04-28
申请人： Issei Harima , Yoshiaki Saito , Takahiro Tochioka
发明人： Issei Harima , Yoshiaki Saito , Takahiro Tochioka
CPC分类号： B60J5/107 , B29C45/0001 , B29C45/0005 , B29C45/0046 , B29L2031/3014 , B60J5/00 , B60J5/0405 , B60J5/0463 , B60J5/0481 , B60J5/10 , B60R13/02 , C08K7/14 , C08L21/00 , C08L23/083 , C08L23/10 , C08L53/00 , Y10T428/161 , Y10T428/249924 , Y10T428/31826 , C08L2666/02 , C08L2666/08
摘要： A resin-made interior member for an opening and closing body of the invention is a resin-made interior member to be attached to an inside of an outer panel of the opening and closing body and is formed by an injection molding method using a molding material of polypropylene type resin containing a reinforcing fiber and rubber and by properly setting the respective contents of the reinforcing fiber and the rubber component, the modulus of bend elasticity is improved by blending the reinforcing fiber without being accompanied with deterioration of the moldability as the material resin and the appearance of the molded product to improve rigidity of the interior member and impact resistance is assured by blending the rubber component to give the interior member with good moldability and appearance in form of the molded product and having a required rigidity and impact resistance.
摘要翻译： 本发明的用于开闭体的树脂制内部构件是将树脂制的内部构件安装在开闭体的外板的内侧，并且通过使用成型材料的注射成型法形成 含有增强纤维和橡胶的聚丙烯类树脂，通过适当设定增强纤维和橡胶成分的含量，通过混合增强纤维而不伴随成型性的劣化，提高了弯曲弹性的模量，作为材料树脂 并且通过混合橡胶组分来确保模塑制品的外观，以提高内部构件的刚度和抗冲击性，以使得内部构件具有良好的成型性和模制品形状的外观，并且具有所需的刚性和抗冲击性。
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公开(公告)号：US20070041671A1
公开(公告)日：2007-02-22
申请号：US10574651
申请日：2004-10-05
CPC分类号： F16C29/088 , F16C29/0647 , F16C29/086
摘要： A guide apparatus including a track rail and a moving block is free from the possibility of foreign matter entering the moving block through the gaps between the side surfaces of the track rail and the inner side surfaces of the moving block even in an environment where many fine dust particles are flying. A guide apparatus has a track rail and a moving block 20 relatively movably attached to the track rail with rolling elements interposed therebetween. The rolling elements recirculate through rolling element recirculation passages. Foreign matter entry preventing plates 34 are provided so that their respective distal ends longitudinally contact the opposite side surfaces of the track rail to close the gaps between the side surfaces of the track rail and at least the inner side surfaces of skirt portions on both sides of a moving block body 21 and the inner side surfaces of end plates of the moving block 20.
摘要翻译： 包括轨道轨道和移动块的引导装置即使在许多罚款的环境中也没有异物通过轨道轨道的侧表面和移动块的内侧表面之间的间隙进入移动块的可能性 尘埃飞扬。 引导装置具有轨道轨道和相对可移动地附接到轨道轨道的移动块体20，其间具有滚动元件。 滚动元件通过滚动元件再循环通道再循环。 异物进入防止板34被设置成使得其各自的远端与轨道轨道的相对侧表面纵向接触以封闭轨道轨道的侧表面之间的间隙和至少两侧的裙部的内侧表面 移动块体21和移动块20的端板的内侧表面。
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公开(公告)号：US07119410B2
公开(公告)日：2006-10-10
申请号：US10901325
申请日：2004-07-29
申请人： Yoshiaki Saito , Hideyuki Sugiyama
发明人： Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , H01L27/228
摘要： It is possible to perform a writing operation with low power consumption and a low current, and enhance reliability without causing element breakdown. There are provided a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a magnetic recording layer formed between the first magnetization-pinned layer and the second magnetization-pinned layer and including at least one magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons; a tunnel barrier layer formed between the first magnetization-pinned layer and the magnetic recording layer; and a nonmagnetic intermediate layer formed between the magnetic recording layer and the second magnetization-pinned layer. The magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side is substantially anti-parallel to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.
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