公开(公告)号：US07078568B2

公开(公告)日：2006-07-18

申请号：US11206068

申请日：2005-08-18

申请人： Hideo Shimizu ,  Takao Saito ,  Izuru Nagasaki

发明人： Hideo Shimizu ,  Takao Saito ,  Izuru Nagasaki

IPC分类号： C07F9/02

CPC分类号： B01J31/2428 ,  B01J31/2471 ,  B01J31/2476 ,  B01J2231/643 ,  B01J2231/645 ,  B01J2531/0266 ,  B01J2531/16 ,  B01J2531/821 ,  B01J2531/822 ,  B01J2531/824 ,  B01J2531/827 ,  B01J2531/828 ,  B01J2531/847 ,  C07B53/00 ,  C07F9/5027 ,  C07F9/65517 ,  C07F9/65683 ,  C07F15/0046 ,  C07F15/0053

摘要： Phosphine compounds represented by the following formula (1): wherein R1, R2, R3, R4, R5, R6 and R7 represent substituents, and asymmetric synthesis catalysts containing transition metal phosphine complexes with the compounds contained as ligands therein. The novel phosphine compounds according to the present invention are useful especially as ligands in transition metal complexes. The transition metal phosphine complexes are useful as catalysts for asymmetric synthetic reactions. The novel phosphine compounds useful as ligands can be prepared by a relatively economical preparation process. Further, use of these catalysts can afford hydrogenated products with high optically purity and is also extremely useful from the industrial standpoint.

公开(公告)号：US20060126830A1

公开(公告)日：2006-06-15

申请号：US11151289

申请日：2005-06-14

申请人： Hideo Shimizu

发明人： Hideo Shimizu

IPC分类号： H04L9/28

CPC分类号： G06F7/728 ,  G06F2207/7219

摘要： According to an aspect of the invention, Montgomery arithmetic can be achieved while omitting division in an input stage. That is, the aspect of the invention is configured to obtain a Montgomery transform result m′ (=mR mod p) of n-bit from an input m of 2n-bit without using the division, with using Montgomery reduction and Montgomery multiplication instead of conventional mod arithmetic and the Montgomery transform. Accordingly, Montgomery arithmetic can be achieved while omitting the division in the input stage.

公开(公告)号：US06945467B2

公开(公告)日：2005-09-20

申请号：US10965774

申请日：2004-10-18

申请人： Kenji Kojima ,  Kentaro Umesawa ,  Hideyuki Miyake ,  Tatsuyuki Matsushita ,  Yuuki Tomoeda ,  Hideo Shimizu ,  Hiroshi Watanabe

发明人： Kenji Kojima ,  Kentaro Umesawa ,  Hideyuki Miyake ,  Tatsuyuki Matsushita ,  Yuuki Tomoeda ,  Hideo Shimizu ,  Hiroshi Watanabe

IPC分类号： G06K19/073 ,  G07F7/10 ,  G06K19/06

CPC分类号： G06Q20/341 ,  G06K19/073 ,  G07F7/1008 ,  G07F7/1083

摘要： IC card receiving power from terminal and performing process, IC card comprises storage storing first identification information uniquely assigned to IC card, acquisition unit acquiring second identification information from terminal, first timer including first change unit whose state changes with lapse of time without power, state of first change unit changing from first initial state to final state via intermediate state, first timer outputting first signal indicative of changed state of first change unit when IC card receives power, comparison unit comparing second identification information with first identification information, determining whether second identification information and first identification information are identical, and providing first initializing signal according to at least one of determined results, and controller initializing first change unit to first initial state when receiving first initializing signal, controller further controlling IC card to make it inhibit process until state of first change unit changes to intermediate state.

公开(公告)号：US20050045731A1

公开(公告)日：2005-03-03

申请号：US10965774

申请日：2004-10-18

申请人： Kenji Kojima ,  Kentaro Umesawa ,  Hideyuki Miyake ,  Tatsuyuki Matsushita ,  Yuuki Tomoeda ,  Hideo Shimizu ,  Hiroshi Watanabe

发明人： Kenji Kojima ,  Kentaro Umesawa ,  Hideyuki Miyake ,  Tatsuyuki Matsushita ,  Yuuki Tomoeda ,  Hideo Shimizu ,  Hiroshi Watanabe

IPC分类号： G06K19/073 ,  G07F7/10 ,  G06K19/06

CPC分类号： G06Q20/341 ,  G06K19/073 ,  G07F7/1008 ,  G07F7/1083

摘要： IC card receiving power from terminal and performing process, IC card comprises storage storing first identification information uniquely assigned to IC card, acquisition unit acquiring second identification information from terminal, first timer including first change unit whose state changes with lapse of time without power, state of first change unit changing from first initial state to final state via intermediate state, first timer outputting first signal indicative of changed state of first change unit when IC card receives power, comparison unit comparing second identification information with first identification information, determining whether second identification information and first identification information are identical, and providing first initializing signal according to at least one of determined results, and controller initializing first change unit to first initial state when receiving first initializing signal, controller further controlling IC card to make it inhibit process until state of first change unit changes to intermediate state.

摘要翻译： IC卡从终端接收电力和执行处理，IC卡包括存储唯一地分配给IC卡的第一识别信息，获取单元从终端获取第二识别信息，第一定时器包括其状态随着时间的流逝随着时间的变化而没有电力状态 第一变化单元经由中间状态从第一初始状态改变到最终状态，当IC卡接收到电力时，第一定时器输出指示第一改变单元的状态的第一信号，比较单元将第二识别信息与第一识别信息进行比较，确定第二识别 信息和第一识别信息是相同的，并且根据确定的结果中的至少一个提供第一初始化信号，并且当接收到第一初始化信号时，控制器将第一改变单元初始化为第一初始状态，控制器进一步控制IC卡使其进入 hibit进程直到第一个更改单元的状态变为中间状态。

公开(公告)号：US06717016B2

公开(公告)日：2004-04-06

申请号：US10330495

申请日：2002-12-30

申请人： Hideo Shimizu ,  Takao Saito

发明人： Hideo Shimizu ,  Takao Saito

IPC分类号： C07F950

CPC分类号： B01J31/2466 ,  B01J31/2476 ,  B01J2231/645 ,  B01J2531/0266 ,  B01J2531/821 ,  B01J2531/822 ,  B01J2531/824 ,  B01J2531/827 ,  B01J2531/847 ,  C07B2200/07 ,  C07C231/18 ,  C07F9/65683 ,  C07F15/0046 ,  C07F15/0053 ,  C07F15/0073 ,  C07F15/008 ,  C07C233/47

摘要： A phosphine compound of formula (1) and a phosphine compound of formula (2) a transition metal complex having the phosphine compound as a ligand and a catalyst for asymmetric hydrogenation including the transition metal complex.

摘要翻译： 式（1）的膦化合物和式（2）的膦化合物具有膦化合物作为配体的过渡金属络合物和包括过渡金属络合物的不对称氢化催化剂。

公开(公告)号：USD484955S1

公开(公告)日：2004-01-06

申请号：US29168057

申请日：2002-09-24

申请人： Hideo Shimizu

设计人： Hideo Shimizu

公开(公告)号：USD482107S1

公开(公告)日：2003-11-11

申请号：US29168049

申请日：2002-09-24

申请人： Hideo Shimizu

设计人： Hideo Shimizu

公开(公告)号：US06434008B1

公开(公告)日：2002-08-13

申请号：US09385632

申请日：1998-08-27

申请人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

发明人： Kazuji Yamada ,  Akira Tanaka ,  Ryuichi Saito ,  Yasutoshi Kurihara ,  Tadao Kushima ,  Takashi Haramaki ,  Yoshihiko Koike ,  Takashi Hosokawa ,  Mamoru Sawahata ,  Masahiro Koizumi ,  Jin Onuki ,  Kazuhiro Suzuki ,  Isao Kobayashi ,  Hideo Shimizu ,  Yutaka Higashimura ,  Shigeki Sekine ,  Nobuya Koike ,  Hideya Kokubun

IPC分类号： H05K702

CPC分类号： H01L23/49562 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

摘要翻译： 一种半导体器件，其中多个半导体元件被结合到绝缘体衬底上的至少一个电极图案上，所述绝缘体衬底在主表面上形成多个电极图案，所述半导体元件的每个电极电连接到所述电极图案， 绝缘体基板的另一表面被结合到散热基底上，散热基座的上表面覆盖有用于从外部环境切断半导体元件的构件，将绝缘体基板上的电极与电极电连接的端子 设置在切断部件外侧，散热基体的材料的线膨胀系数大于半导体元件的线膨胀系数，小于半导体元件的线膨胀系数的3倍，导热系数 大于100 W / mK，半音 电感元件布置在至少一个电极表面上，并且在至少两个区域中被绝缘体基底上的另一个电极表面分隔。

公开(公告)号：USD448834S1

公开(公告)日：2001-10-02

申请号：US29140994

申请日：2001-04-27

申请人： Hideo Shimizu

设计人： Hideo Shimizu

公开(公告)号：US6006819A

公开(公告)日：1999-12-28

申请号：US44517

申请日：1998-03-19

申请人： Hideo Shimizu ,  Tsunehisa Hata ,  Yusuke Toyoda ,  Takeo Itou ,  Norito Suzuki ,  Katuya Nagase

发明人： Hideo Shimizu ,  Tsunehisa Hata ,  Yusuke Toyoda ,  Takeo Itou ,  Norito Suzuki ,  Katuya Nagase

IPC分类号： B22D19/00 ,  B22D19/08 ,  B22D19/04 ,  B22D19/16

CPC分类号： B22D19/00

摘要： An aluminum-based composite member having an increased strength of bond between an aluminum-based body and a cast iron material portion which is incorporated into the aluminum-based body by casting is provided by an improved process. The following steps are employed in the process: a step of removing an oxide film on the surface of the cast iron material portion and activating such surface; a step of forming a protecting plated-layer having a thickness a in a range of 0.8 .mu.m.ltoreq.a.ltoreq.5 .mu.m on the surface of the cast iron material portion; a step of preheating the cast iron material portion in a reducing gas atmosphere and reducing an oxide on the surface of the protecting plated-layer; a step of vanishing the protecting plated-layer by a diffusing phenomenon and forming an aluminum-based alloy plated layer on the surface of the cast iron material portion by immersing the cast iron material portion into a molten aluminum-based alloy; a step of quenching the cast iron material portion in an inert gas atmosphere; and a step of incorporating the cast iron material portion into the aluminum-based body by casting.

摘要翻译： 通过改进的方法提供了通过铸造而结合到铝基体中的铝基体和铸铁材料部分之间的结合强度增加的铝基复合构件。 在该方法中采用以下步骤：去除铸铁材料部分表面上的氧化膜并活化该表面的步骤; 在铸铁材料部分的表面上形成厚度a在0.8μm≤5μm范围内的保护电镀层的步骤; 在还原气体气氛中预热铸铁材料部分并还原保护镀层表面上的氧化物的步骤; 通过漫射现象消除保护电镀层的步骤，并且通过将铸铁材料部分浸入熔融的铝基合金中，在铸铁材料部分的表面上形成铝基合金镀层; 在惰性气体气氛中淬火铸铁材料部分的步骤; 以及通过铸造将铸铁材料部分结合到铝基体中的步骤。