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    Vehicle seat reclining apparatus
    5.
    发明授权
    Vehicle seat reclining apparatus 有权
    车辆座椅斜倚装置

    公开(公告)号：US08408630B2

    公开(公告)日：2013-04-02

    申请号：US12859989

    申请日：2010-08-20

    申请人： Takao Saito ,  Toshinao Wada ,  Masaki Sugimoto

    发明人： Takao Saito ,  Toshinao Wada ,  Masaki Sugimoto

    IPC分类号： B60N2/10

    CPC分类号： B60N2/366 ,  B60N2/2245

    摘要： A slide member is slidable along a slide rail provided at a vehicle-body side portion. When lock pawls provided at the slide member are engaged with the slide rail, the slide member is locked. The slide member is unlocked by operating an operation cable connected to the lock pawls. The operation cable is fitted to a fitting portion of an attachment bracket connected to the slide rail. A portion from a fixed portion fixed to the fitting portion to a movable portion (one end portion) extends through a region where a non-contact portion is disposed, and does not contact the non-contact portion. The movable portion is connected to the slide member and moved integrally with the slide member.

    摘要翻译： 滑动构件可沿着设置在车体侧部分的滑轨滑动。 当设置在滑动构件上的锁定爪与滑轨接合时，滑动构件被锁定。 通过操作连接到锁定爪的操作电缆来解锁滑动构件。 操作电缆安装到连接到滑轨的附件支架的装配部分。 从固定到配合部分的固定部分到可移动部分（一个端部）的部分延伸穿过非接触部分设置的区域，并且不接触非接触部分。 可动部与滑动部件连接，与滑动部件一体移动。

    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM
    6.
    发明申请
    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM 有权
    沉积硅基薄膜的方法和沉积硅基薄膜的方法

    公开(公告)号：US20090246942A1

    公开(公告)日：2009-10-01

    申请号：US12411507

    申请日：2009-03-26

    申请人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

    发明人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

    IPC分类号： H01L21/20 ,  C23C16/503

    CPC分类号： H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

    摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

    摘要翻译： 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

    PULSED POWER SUPPLY
    7.
    发明申请
    PULSED POWER SUPPLY 审中-公开
    脉冲电源

    公开(公告)号：US20080315688A1

    公开(公告)日：2008-12-25

    申请号：US12136113

    申请日：2008-06-10

    申请人： Tatsuya Terazawa ,  Takao Saito

    发明人： Tatsuya Terazawa ,  Takao Saito

    IPC分类号： H03K3/64

    CPC分类号： H03K3/64

    摘要： A pulsed power supply includes a DC power source, and a transformer and a switch which are connected in series with each other across the DC power source. The pulsed power supply operates to produce a plurality of high-voltage pulses in a repetition of cycles in each of which an induced energy is stored in the transformer when the switch is turned on and a high-voltage pulse is generated across a secondary winding of the transformer when the switch is turned off. The current flowing through the primary winding of the transformer is controlled to keep its peak value constant. The pulsed power supply further includes a current detector for detecting the current flowing through the primary winding of the transformer, and a third circuit for turning off the switch when the current detected by the current detector reaches the peak value.

    摘要翻译： 脉冲电源包括直流电源以及跨越DC电源彼此串联连接的变压器和开关。 脉冲电源操作以产生多个重复周期的高电压脉冲，其中当开关导通时，感应能量存储在变压器中，并且跨越次级绕组产生高电压脉冲 变压器当开关关闭时。 流过变压器初级绕组的电流被控制以保持其峰值恒定。 脉冲电源还包括用于检测流过变压器的初级绕组的电流的电流检测器，以及当由电流检测器检测到的电流达到峰值时关闭开关的第三电路。

    METHODS OF GENERATING PLASMA, OF ETCHING AN ORGANIC MATERIAL FILM, OF GENERATING MINUS IONS, OF OXIDATION AND NITRIDING
    8.
    发明申请
    METHODS OF GENERATING PLASMA, OF ETCHING AN ORGANIC MATERIAL FILM, OF GENERATING MINUS IONS, OF OXIDATION AND NITRIDING 失效
    产生等离子体的方法，蚀刻有机材料膜，产生阴离子，氧化和氮化

    公开(公告)号：US20080122368A1

    公开(公告)日：2008-05-29

    申请号：US11843771

    申请日：2007-08-23

    申请人： Takao Saito ,  Yoshimasa Kondo ,  Tatsuya Terazawa

    发明人： Takao Saito ,  Yoshimasa Kondo ,  Tatsuya Terazawa

    IPC分类号： H05H1/00

    CPC分类号： H01J37/32027 ,  H01L21/28202 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/3185

    摘要： A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V/nsec and not higher than 10000 V/nsec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.

    摘要翻译： 在处理气体上施加直流脉冲电压以产生放电等离子体。 直流脉冲电压的占空比控制在0.0001％以上且8.0％以下的范围内。 直流脉冲电压的上升时间控制在不低于0.1V / nsec且不高于10000V / ns的范围内。 或者，从用于执行放电等离子体和杂质注入的单个电源施加正脉冲和负脉冲。

    ELECTRIC CIRCUIT, AND PULSE POWER SOURCE
    9.
    发明申请
    ELECTRIC CIRCUIT, AND PULSE POWER SOURCE 有权
    电路和脉冲电源

    公开(公告)号：US20070210837A1

    公开(公告)日：2007-09-13

    申请号：US11683552

    申请日：2007-03-08

    申请人： Tatsuya Terazawa ,  Takao Saito

    发明人： Tatsuya Terazawa ,  Takao Saito

    IPC分类号： H03K5/01

    CPC分类号： H03K17/567 ,  H03K5/12 ,  H03K17/0406 ,  H05H1/36

    摘要： A pulse power source comprises a first circuit, a second circuit, a transformer for coupling the first circuit and the second circuit, and a switching controller. The second circuit comprises a third semiconductor switch connected in series with a secondary winding of the transformer. The third semiconductor switch is connected in such a direction that a voltage generated in the second circuit is reverse-biased during a period in which the second semiconductor switch is turned on. A gate amplifier for forming a control signal from the switching controller into a pulse and outputting the pulse as a pulse signal is connected between a gate terminal and a cathode terminal of the third semiconductor switch.

    摘要翻译： 脉冲电源包括第一电路，第二电路，用于耦合第一电路和第二电路的变压器以及开关控制器。 第二电路包括与变压器的次级绕组串联连接的第三半导体开关。 第三半导体开关沿着使第二电路中产生的电压在第二半导体开关导通的时段内被反向偏置的方向连接。 用于将来自开关控制器的控制信号形成脉冲并输出脉冲作为脉冲信号的门放大器连接在第三半导体开关的栅极端子和阴极端子之间。

    Plasmon resonant structure, controlling method thereof, and a metallic domain manufacturing method
    10.
    发明申请
    Plasmon resonant structure, controlling method thereof, and a metallic domain manufacturing method 审中-公开
    等离子体共振结构，其控制方法和金属畴制造方法

    公开(公告)号：US20060194344A1

    公开(公告)日：2006-08-31

    申请号：US11339964

    申请日：2006-01-25

    申请人： Takao Saito

    发明人： Takao Saito

    IPC分类号： C12M1/34 ,  G01N1/28 ,  G01N33/543

    CPC分类号： G01N33/54373 ,  G01N21/554

    摘要： Metallic particle layers with metallic domains being arranged therein each at a predetermined space within a horizontal plane are laminated at an appropriate distance in the vertical direction in a dielectric layer. The distance ΔW between each of the metallic domains may be controlled by controlling the growth of metallic particles for the horizontal direction and the distance ΔL between the metallic particle layers may be controlled by controlling the thickness of the dielectric layer to be laminated for the vertical direction, so that the effect of field enhancement by plasmon resonance is improved by satisfactory control for the plasmon resonance in the direction of the thickness and in the direction orthogonal thereto.

    摘要翻译： 在电介质层中以垂直方向的适当距离层叠金属颗粒层，金属颗粒层各自位于水平面内的预定空间。 可以通过控制金属颗粒在水平方向上的生长来控制每个金属区域之间的距离DeltaW，并且可以通过控制垂直方向上层叠的电介质层的厚度来控制金属颗粒层之间的距离DeltaL ，因此通过在厚度方向和与其正交的方向上等离子体共振的令人满意的控制来提高通过等离子体共振的场增强的效果。