公开(公告)号：US20230054986A1

公开(公告)日：2023-02-23

申请号：US17904400

申请日：2021-02-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Seiichi YONEDA ,  Takayuki IKEDA ,  Hiroki INOUE ,  Yusuke NEGORO ,  Shunpei YAMAZAKI

IPC: H01L27/146

Abstract: An imaging device capable of image processing is provided. The imaging device has an image recognition function. In the imaging device, cells have a function of acquiring imaging data and a function of retaining weight data. Among the cells arranged in a matrix, some of the cells acquire imaging data and the rest of the cells retain weight data. Then, arithmetic operation is performed using the imaging data and the weight data. For example, all the imaging data can be subjected to arithmetic operation where products of the imaging data and the weight data are calculated and the sum of the calculated products is calculated. That is, product-sum operation can be performed. When an arithmetic operation result is captured by a neural network such as a convolutional neural network (CNN) or the like, the additional function can be used because image processing can be performed on the imaging data.

公开(公告)号：US20230045920A1

公开(公告)日：2023-02-16

申请号：US17792095

申请日：2021-01-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jo SAITO ,  Yohei MOMMA ,  Mayumi MIKAMI ,  Teruaki OCHIAI ,  Shunpei YAMAZAKI

IPC: C01G53/00 ,  C01G51/00 ,  H01M4/525

Abstract: A positive electrode active material having a crystal structure that is unlikely to be broken by repeated charging and discharging is provided. A positive electrode active material with high charge and discharge capacity is provided. One embodiment of the present invention is a positive electrode active material containing lithium, cobalt, nickel, and oxygen; in which a molar ratio of lithium, cobalt, and nickel is lithium: cobalt: nickel=1:1−x: x (0.3

公开(公告)号：US20230044589A1

公开(公告)日：2023-02-09

申请号：US17767987

申请日：2020-10-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kaori OGITA ,  Hiroshi KADOMA ,  Tomoya HIROSE ,  Yumiko YONEDA ,  Yuji IWAKI ,  Tatsuyoshi TAKAHASHI ,  Shunpei YAMAZAKI

IPC: H01M4/62 ,  H01M10/0585 ,  H01M4/36 ,  H01M10/0562 ,  H01M4/525 ,  H01M4/131 ,  H01M4/66

Abstract: A secondary battery with excellent cycle performance is provided. The secondary battery is an all-solid-state battery including a positive electrode current collector layer, a base film, a positive electrode active material layer, a buffer layer, and a solid electrolyte layer. The base film contains titanium nitride. The positive electrode active material layer contains lithium cobalt oxide. The buffer layer contains titanium oxide. The solid electrolyte layer contains a titanium compound. By using titanium oxide for the buffer layer, a side reaction between the positive electrode active material layer and the solid electrolyte layer can be suppressed, and cycle performance can be improved.

公开(公告)号：US20230034397A1

公开(公告)日：2023-02-02

申请号：US17783071

申请日：2020-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor including a gate electrode, a source electrode, and a drain electrode; a first insulator over the transistor; a second insulator over the first insulator; a third insulator over the second insulator; a first electrode in contact with the top surface of the source electrode; and a second electrode in contact with the top surface of the drain electrode. The second insulator includes a first opening portion overlapping with the source electrode and a second opening portion overlapping with the drain electrode. The third insulator is in contact with the side surface of the second insulator and the top surface of the first insulator inside the first opening portion and the second opening portion. The first electrode is positioned through the first opening portion. The second electrode is positioned through the second opening portion.

公开(公告)号：US20230027402A1

公开(公告)日：2023-01-26

申请号：US17787982

申请日：2020-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Tomoaki MORIWAKA

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/8239

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes a first insulator; a second insulator having an opening over the first insulator; a third insulator that has a first depressed portion and is provided inside the opening; a first oxide that has a second depressed portion and is provided inside the first depressed portion; a second oxide provided inside the second depressed portion; a first conductor and a second conductor that are electrically connected to the second oxide and are apart from each other; a fourth insulator over the second oxide; and a third conductor including a region overlapping with the second oxide with the fourth insulator therebetween. The second oxide includes a first region, a second region, and a third region sandwiched between the first region and the second region in a top view. The first conductor includes a region overlapping with the first region and the second insulator. The second conductor includes a region overlapping with the second region and the second insulator. The third conductor includes a region overlapping with the third region.

公开(公告)号：US20230014200A1

公开(公告)日：2023-01-19

申请号：US17944275

申请日：2022-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA ,  Kazunori WATANABE ,  Koji KUSUNOKI

IPC: H01L27/12 ,  G06F3/041 ,  H01L29/786 ,  G02F1/1368 ,  G06F3/044

Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.

公开(公告)号：US20230006203A1

公开(公告)日：2023-01-05

申请号：US17781178

申请日：2020-11-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuji IWAKI ,  Tatsuyoshi TAKAHASHI ,  Yohei MOMMA ,  Shunpei YAMAZAKI

IPC: H01M4/525 ,  C01G51/00 ,  B60L50/64

Abstract: As for a secondary battery using lithium cobalt oxide as a positive electrode active material, the positive electrode active material with which a decrease in battery capacity due to repeated charge and discharge is inhibited is provided. Alternatively, a positive electrode active material particle which hardly deteriorates is provided. The positive electrode active material includes lithium, cobalt, oxygen, magnesium, aluminum, and fluorine and is a crystal represented by a layered rock-salt structure. The space group of the crystal is represented by R−3m. The concentration of fluorine in a surface portion of the crystal is higher than that inside the crystal. The concentration of magnesium in the surface portion of the crystal is higher than that inside the crystal. The atomic ratio of magnesium to aluminum in the surface portion of the crystal is higher than that inside the crystal.

公开(公告)号：US20230004070A1

公开(公告)日：2023-01-05

申请号：US17898506

申请日：2022-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideaki SHISHIDO

IPC: G03B15/05 ,  H04N5/225 ,  G06F1/16 ,  G09F9/30

Abstract: Provided is an electronic device with high portability, a highly browsable electronic device, or an electronic device having a novel light source that can be used in shooting photographs and video. The electronic device includes a camera and a flexible display portion. The display portion has a first region and a second region. The first region has a function of emitting light to a photographic subject. The second region has a function of displaying an image of the photographic subject shot by the camera. The display portion can be bent so that the first region and the second region face in different directions.

公开(公告)号：US20220416089A1

公开(公告)日：2022-12-29

申请号：US17895126

申请日：2022-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Yutaka OKAZAKI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/108 ,  H01L27/12 ,  H01L29/792

Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US20220406944A1

公开(公告)日：2022-12-22

申请号：US17894197

申请日：2022-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10 ,  H05B33/14

Abstract: A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided. The method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.