公开(公告)号：US20230361219A1

公开(公告)日：2023-11-09

申请号：US18136431

申请日：2023-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US20180047753A1

公开(公告)日：2018-02-15

申请号：US15723227

申请日：2017-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Yoshinori IEDA ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US20170018631A1

公开(公告)日：2017-01-19

申请号：US15276993

申请日：2016-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US20160380106A1

公开(公告)日：2016-12-29

申请号：US15259294

申请日：2016-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

公开(公告)号：US20170352746A1

公开(公告)日：2017-12-07

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

公开(公告)号：US20160322503A1

公开(公告)日：2016-11-03

申请号：US15131298

申请日：2016-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki TEZUKA ,  Tetsuhiro TANAKA ,  Toshiya ENDO ,  Mitsuhiro ICHIJO

IPC: H01L29/786 ,  H01L29/792 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7855 ,  H01L29/78603 ,  H01L29/78648

Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

Abstract translation: 半导体器件包括半导体，第一导体，第二导​​体，第三导体，第四导体，第一绝缘体，第二绝缘体，第三绝缘体和第四绝缘体。 第一导体和半导体部分地彼此重叠，第一绝缘体位于它们之间。 第二导体和第三导体具有与半导体接触的区域。 半导体具有与第二绝缘体接触的区域。 第四绝缘体具有第一区域和第二区域。 第一区域比第二区域厚。 第一区域具有与第二绝缘体接触的区域。 第二区域具有与第三绝缘体接触的区域。 第四导体和第二绝缘体彼此部分重叠，第四绝缘体位于它们之间。

公开(公告)号：US20160308060A1

公开(公告)日：2016-10-20

申请号：US15092956

申请日：2016-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Akihisa SHIMOMURA ,  Yuji EGI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

Abstract translation: 具有稳定电特性的晶体管。 半导体器件包括衬底上的第一绝缘体，第一绝缘体上的第二绝缘体，与第二绝缘体的顶表面的至少一部分接触的氧化物半导体，与第一绝缘体的至少一部分接触的第三绝缘体 所述氧化物半导体的第一导体和与所述氧化物半导体电连接的第二导体，在所述第三绝缘体上的第四绝缘体，位于所述第四绝缘体之上的第三导体，并且其中至少一部分位于所述第一导体与所述第二绝缘体之间 导体和第三导体上的第五绝缘体。 第一绝缘体包含卤素元素。

公开(公告)号：US20160225909A1

公开(公告)日：2016-08-04

申请号：US15096632

申请日：2016-04-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/477 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

公开(公告)号：US20230034397A1

公开(公告)日：2023-02-02

申请号：US17783071

申请日：2020-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor including a gate electrode, a source electrode, and a drain electrode; a first insulator over the transistor; a second insulator over the first insulator; a third insulator over the second insulator; a first electrode in contact with the top surface of the source electrode; and a second electrode in contact with the top surface of the drain electrode. The second insulator includes a first opening portion overlapping with the source electrode and a second opening portion overlapping with the drain electrode. The third insulator is in contact with the side surface of the second insulator and the top surface of the first insulator inside the first opening portion and the second opening portion. The first electrode is positioned through the first opening portion. The second electrode is positioned through the second opening portion.

公开(公告)号：US20160372492A1

公开(公告)日：2016-12-22

申请号：US15251375

申请日：2016-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Yoshinori IEDA ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC: H01L27/12 ,  H01L27/06

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

Abstract translation: 提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。 此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。 在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。 具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜 第一氮化物绝缘膜和包括氧化物半导体的晶体管。