公开(公告)号：US20100213560A1

公开(公告)日：2010-08-26

申请号：US12708167

申请日：2010-02-18

申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14636 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14683

摘要： A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.

摘要翻译： 半导体图像传感器装置包括第一和第二半导体衬底。 像素阵列和控制电路形成在第一基板的第一表面中。 在第一基板的第一表面上形成互连层，并将控制电路电连接到像素阵列。 顶部导电层形成在互连层上，以经由互连层与至少一个控制电路或像素阵列电连接。 第二基板的表面接合到顶部导电层。 导电硅通孔（TSV）通过第二衬底，并且与顶部导电层具有电连接性。 端子形成在第二基板的相对表面上，并电连接到TSV。

公开(公告)号：US20100184242A1

公开(公告)日：2010-07-22

申请号：US12355211

申请日：2009-01-16

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Pao-Tung Chen ,  Wen-De Wang ,  Jyh-Ming Hung

IPC分类号： H01L21/76 ,  H01L31/02 ,  H01L31/0224

CPC分类号： H01L21/76237 ,  H01L21/2652 ,  H01L27/0629 ,  H01L27/1463 ,  H01L27/14683

摘要： Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.

摘要翻译： 提供了将掺杂剂离子注入集成电路的方法。 该方法包括在衬底中形成第一像素和第二像素，在衬底上形成蚀刻停止层，在蚀刻停止层上方形成硬掩模层，图案化硬掩模层以包括第一像素与第二像素之间的开口 并且通过所述开口植入多个掺杂剂以形成隔离特征。

公开(公告)号：US07656000B2

公开(公告)日：2010-02-02

申请号：US11753480

申请日：2007-05-24

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

IPC分类号： H01L31/00 ,  H01L31/062

CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.

摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光门结构具有包括反射层的栅极。

公开(公告)号：US07537991B2

公开(公告)日：2009-05-26

申请号：US11084305

申请日：2005-03-18

申请人： Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chen

发明人： Dun-Nian Yaung ,  Sou-Kuo Wu ,  Ho-Ching Chen

IPC分类号： H01L21/8234 ,  H01L21/8244

CPC分类号： H01L27/10894 ,  H01L27/0629 ,  H01L27/10897 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14689 ,  H01L29/665

摘要： A method of fabricating a salicided MOS and a one-sided salicided MOS device on a semiconductor substrate. A conformal oxide layer and an organic layer are sequentially formed on first and second MOS devices and the substrate. The first MOS has a first gate structure, a first spacer and first and second doped regions. The second MOS has a second gate structure, a second spacer and third and fourth doped regions. Anisotropic etching is performed to remove part of the organic layer until the oxide layer on the first and the second gate structures is exposed, wherein a remaining organic layer is left above the substrate. The oxide layer on the first and the second gate structures is removed. The remaining organic layer is removed. The oxide layer on the first, second, and third doped regions is removed. Thus, a silicide layer cannot form on the fourth doped region.

摘要翻译： 一种在半导体衬底上制造水化MOS和单面水化MOS器件的方法。 在第一和第二MOS器件和衬底上依次形成保形氧化物层和有机层。 第一MOS具有第一栅极结构，第一间隔物以及第一和第二掺杂区域。 第二MOS具有第二栅极结构，第二间隔物和第三和第四掺杂区域。 进行各向异性蚀刻以除去部分有机层，直到暴露出第一和第二栅极结构上的氧化物层，其中剩余的有机层留在衬底上。 去除第一和第二栅极结构上的氧化物层。 剩下的有机层被去除。 去除第一，第二和第三掺杂区域上的氧化物层。 因此，在第四掺杂区域上不能形成硅化物层。

公开(公告)号：US20080217659A1

公开(公告)日：2008-09-11

申请号：US11682401

申请日：2007-03-06

申请人： Jyh-Ming Hung ,  Dun-Nian Yaung

发明人： Jyh-Ming Hung ,  Dun-Nian Yaung

IPC分类号： H01L27/148 ,  H01L21/00

CPC分类号： H01L27/14654

摘要： An image sensor device includes a semiconductor substrate having a first type of conductivity, a first layer overlying the semiconductor substrate and having the first type of conductivity, a second layer overlying the first layer and having a second type of conductivity different than the first type of conductivity, and a plurality of pixels formed in the second layer.

摘要翻译： 图像传感器装置包括具有第一类型的导电性的半导体衬底，覆盖半导体衬底并具有第一类型导电性的第一层，覆盖第一层并具有不同于第一类型的第二类型的第二类型的导电性的第二层 导电性，以及形成在第二层中的多个像素。

公开(公告)号：US20070262364A1

公开(公告)日：2007-11-15

申请号：US11626664

申请日：2007-01-24

申请人： Tzu-Hsuan Hsu ,  Chris Hsieh ,  Dun-Nian Yaung ,  Chung-Yi Yu

发明人： Tzu-Hsuan Hsu ,  Chris Hsieh ,  Dun-Nian Yaung ,  Chung-Yi Yu

IPC分类号： H01L31/113 ,  H01L31/062

CPC分类号： H01L31/18 ,  H01L27/1203 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148

摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

摘要翻译： 背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。 传感器还包括形成在半导体衬底的后表面内的多个吸收深度。 多个吸收深度中的每一个根据多个像素中的每一个排列。 用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。 该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素之下。

公开(公告)号：US20070117253A1

公开(公告)日：2007-05-24

申请号：US11532674

申请日：2006-09-18

申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

IPC分类号： H01L21/00 ,  H01L31/112

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L31/0203 ,  H01L2224/48463 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the second set of pads through the metal layer, and a pad in the second set of pads is exposed to the surface of the backside illuminated image sensor for testing. In an alternative embodiment, a first set of pads, at least one second pad directly positioned over the first set of pads are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the at least one second pad and the at least one second pad is exposed to the surface of the backside illuminated image sensor for testing.

摘要翻译： 在本公开中提供了在背面照明图像传感器中提供金属延伸的方法。 在一个实施例中，第一组焊盘和第二组焊盘以及金属层设置在背面照明的图像传感器中。 第一组焊盘通过金属层电耦合到第二组焊盘，并且第二组焊盘中的焊盘暴露于背面照射的图像传感器的表面用于测试。 在替代实施例中，第一组焊盘，至少一个第二焊盘，直接位于第一组焊盘上方，设置在背面照明的图像传感器中。 第一组焊盘电耦合到至少一个第二焊盘，并且至少一个第二焊盘暴露于背面照射的图像传感器的表面用于测试。

公开(公告)号：US07078779B2

公开(公告)日：2006-07-18

申请号：US10966641

申请日：2004-10-15

申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu

发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14623

摘要： A semiconductor device including a substrate having a plurality of image sensing elements formed therein, a plurality of spaced apart color filters overlying the substrate and a light blocking material interposed between adjacent spaced apart color filters.

公开(公告)号：US20060092301A1

公开(公告)日：2006-05-04

申请号：US10980639

申请日：2004-11-03

申请人： Dun-Nian Yaung ,  Ho-Ching Chien ,  Tzu-Hsuan Hsu

发明人： Dun-Nian Yaung ,  Ho-Ching Chien ,  Tzu-Hsuan Hsu

IPC分类号： H04N5/335

CPC分类号： H04N5/35509

摘要： An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.

摘要翻译： 图像传感器单元包括耦合到工作电压的第一MOS晶体管，用于提供图像传感器单元的输出电压，输出电压与第一MOS晶体管的栅极上的电压一致地改变。 光电二极管耦合到浮动节点，其进一步控制第一MOS晶体管的栅极的电压。 光电导体耦合在工作电压和浮动节点之间。 光电导体的电阻响应于施加的照明的幅度变化而变化，使得浮动节点在光电二极管耗尽电荷的同时，通过光电导体顺序地被提供额外的电荷，从而降低栅极上的电压的电压降低率 的第一MOS晶体管。

公开(公告)号：US06998207B2

公开(公告)日：2006-02-14

申请号：US10406122

申请日：2003-04-03

申请人： Dun-Nian Yaung

发明人： Dun-Nian Yaung

IPC分类号： G02B5/20

CPC分类号： G02B5/201

摘要： A method of fabricating a color filter image sensor, comprising the following sequential steps. A structure having a first color filter layer formed thereover is provided. The first color filter layer is patterned to form at least one first color filter layer portion. A second color filter layer is formed over the structure and the at least one patterned first color filter layer portion. The second color filter layer is patterned to form at least one second color filter layer portion. A third color filter layer is formed over the structure, the at least one patterned first color filter layer portion and the at least one second color filter layer portion. The at least one third color filter layer is etched back to form: at least one third color filter layer portion; a planar upper surface common to all of the at least one first, second and third color filter layer portions. A microlens layer is formed over the planar upper surface to form the color filter image sensor.

摘要翻译： 一种制造滤色器图像传感器的方法，包括以下顺序步骤。 提供一种其上形成有第一滤色器层的结构。 图案化第一滤色器层以形成至少一个第一滤色器层部分。 在所述结构和所述至少一个图案化的第一滤色器层部分上形成第二滤色器层。 图案化第二滤色器层以形成至少一个第二滤色器层部分。 在所述结构上形成第三滤色器层，所述至少一个图案化的第一滤色器层部分和所述至少一个第二滤色器层部分。 将至少一个第三滤色器层回蚀刻形成：至少一个第三滤色器层部分; 所述至少一个第一，第二和第三滤色器层部分共同的平面上表面。 在平面上表面上形成微透镜层以形成滤色器图像传感器。