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    METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR
    1.
    发明申请
    METHOD OF MAKING WAFER STRUCTURE FOR BACKSIDE ILLUMINATED COLOR IMAGE SENSOR 失效
    制造背面照明彩色图像传感器的波形结构的方法

    公开(公告)号：US20070262364A1

    公开(公告)日：2007-11-15

    申请号：US11626664

    申请日：2007-01-24

    申请人： Tzu-Hsuan Hsu ,  Chris Hsieh ,  Dun-Nian Yaung ,  Chung-Yi Yu

    发明人： Tzu-Hsuan Hsu ,  Chris Hsieh ,  Dun-Nian Yaung ,  Chung-Yi Yu

    IPC分类号： H01L31/113 ,  H01L31/062

    CPC分类号： H01L31/18 ,  H01L27/1203 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148

    摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

    摘要翻译： 背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。 传感器还包括形成在半导体衬底的后表面内的多个吸收深度。 多个吸收深度中的每一个根据多个像素中的每一个排列。 用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。 该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素之下。

    Method of making wafer structure for backside illuminated color image sensor
    4.
    发明授权
    Method of making wafer structure for backside illuminated color image sensor 失效
    制造背面照明彩色图像传感器的晶圆结构的方法

    公开(公告)号：US07638852B2

    公开(公告)日：2009-12-29

    申请号：US11626664

    申请日：2007-01-24

    申请人： Tzu-Hsuan Hsu ,  Chris Hsieh ,  Dun-Nian Yaung ,  Chung-Yi Yu

    发明人： Tzu-Hsuan Hsu ,  Chris Hsieh ,  Dun-Nian Yaung ,  Chung-Yi Yu

    IPC分类号： H01L31/00

    CPC分类号： H01L31/18 ,  H01L27/1203 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148

    摘要： A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

    摘要翻译： 背面照明传感器包括具有前表面和后表面的半导体衬底和形成在半导体衬底的前表面上的多个像素。 传感器还包括形成在半导体衬底的后表面内的多个吸收深度。 多个吸收深度中的每一个根据多个像素中的每一个排列。 用于形成背面照明的方法包括提供具有前表面和后表面的半导体衬底，并在半导体衬底的前表面上形成第一，第二和第三像素。 该方法还包括在半导体衬底的后表面内形成第一，第二和第三厚度，其中第一，第二和第三厚度分别位于第一，第二和第三像素的下方。

    Method for making multi-step photodiode junction structure for backside illuminated sensor
    7.
    发明授权
    Method for making multi-step photodiode junction structure for backside illuminated sensor 有权
    背面照明传感器制作多步光电二极管结构的方法

    公开(公告)号：US08053287B2

    公开(公告)日：2011-11-08

    申请号：US11537265

    申请日：2006-09-29

    申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

    发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung

    IPC分类号： H01L21/339

    CPC分类号： H01L27/14645 ,  H01L27/1464

    摘要： A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.

    摘要翻译： 提供制造背面照明传感器的方法。 提供衬底并且在衬底上执行高能离子注入以注入第一掺杂区域。 在衬底上形成层，并在衬底上执行自对准高能离子注入，以在第一掺杂区域上注入第二掺杂区域。 第一和第二掺杂区域的组合厚度大于衬底的厚度的50％，并且衬底的背表面与第一和第二掺杂区域之间的距离小于衬底厚度的50％。 以这种方式，形成放大的光感测区域，通过该放大的光感测区域从表面的后表面产生的电子可以容易地到达像素。

    Photodetector for backside-illuminated sensor
    8.
    发明授权
    Photodetector for backside-illuminated sensor 有权
    背面照明传感器的光电探测器

    公开(公告)号：US07939903B2

    公开(公告)日：2011-05-10

    申请号：US12651236

    申请日：2009-12-31

    申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    IPC分类号： H01L31/00 ,  H01L31/062

    CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

    摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.

    摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的金属栅极。

    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS
    9.
    发明申请
    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS 审中-公开
    用于减少图像传感器中的光学交叉的装置和方法

    公开(公告)号：US20090020838A1

    公开(公告)日：2009-01-22

    申请号：US11779122

    申请日：2007-07-17

    申请人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    发明人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    IPC分类号： H01L31/0232 ,  H01L21/00

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

    摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

    摘要翻译： 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。