公开(公告)号：US20070130278A1

公开(公告)日：2007-06-07

申请号：US10558433

申请日：2004-02-12

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Hwan-Jong Choi ,  Yong-Tae Kim ,  Feel-Young Koo ,  Ja-In Koo ,  Seong-Hwan Kang

IPC: G06F15/16

CPC classification number: H04B1/202 ,  H04L12/2818

Abstract: The present invention discloses a home network system which can achieve communication between a home master device and a remote control server by using a predetermined message structure. The home network system includes a home master device connected to a plurality of home appliances, and a remote control server connected to the home master device through a first network, for transmitting/receiving a message between a user terminal and the home master device. The message transmitted/received between the home master device and the remote control server includes at least a product code unit of the corresponding home appliance, a message code unit for notifying a transmission/reception direction of the message, parameter units under the definition of the message, and a number unit of parameters.

Abstract translation: 本发明公开了一种家庭网络系统，其可以通过使用预定的消息结构来实现家庭主设备和远程控制服务器之间的通信。 家庭网络系统包括连接到多个家用电器的家庭主设备和通过第一网络连接到家庭主设备的远程控制服务器，用于在用户终端和家庭主设备之间发送/接收消息。 在家庭主设备和远程控制服务器之间发送/接收的消息至少包括相应家用电器的产品代码单元，用于通知消息的发送/接收方向的消息代码单元， 消息和一个单位的参数。

公开(公告)号：US20060251086A1

公开(公告)日：2006-11-09

申请号：US10558434

申请日：2004-05-14

Applicant: Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: H04L12/56

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, when the protocol includes an application layer for handling a message for controlling and monitoring the electric device, a network layer for network-connecting the electric device to the network manager, a data link layer for accessing shared transmission medium, and a physical layer for providing a physical interface between the electric device and the network manager, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code for network security when accessing the dependent transmission medium.

Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络。 家庭网络系统包括：基于预定协议的网络; 至少电气设备连接到网络; 以及连接到网络的用于控制和/或监视电子设备的网络管理器，当协议包括用于处理用于控制和监视电子设备的消息的应用层时，网络层将电气设备网络连接到 网络管理器，用于访问共享传输介质的数据链路层，以及用于在电气设备和网络管理器之间提供物理接口的物理层，其中物理层还包括用于向从属传输介质提供接口的特殊协议， 并且所述网络层还包括用于在访问所述依赖传输介质时管理用于网络安全性的归属代码的归属代码控制子层。

公开(公告)号：US20060170031A1

公开(公告)日：2006-08-03

申请号：US11344560

申请日：2006-01-31

Applicant: Sang-Woo Kang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Seung-Beom Yoon

Inventor： Sang-Woo Kang ,  Jeong-Uk Han ,  Yong-Tae Kim ,  Seung-Beom Yoon

IPC: H01L29/788

CPC classification number: H01L29/785 ,  H01L27/105 ,  H01L27/115 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/7881 ,  H01L29/792

Abstract: A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.

公开(公告)号：US20060079054A1

公开(公告)日：2006-04-13

申请号：US11245527

申请日：2005-10-07

Applicant: Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Jin-Woo Kim

Inventor： Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Jin-Woo Kim

IPC: H01L21/336 ,  H01L21/3205

CPC classification number: H01L29/7881 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

Abstract: A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.

Abstract translation: 非易失性存储器件包括设置在衬底上的控制栅电极，其间插入有第一绝缘层，以及设置在通过控制栅电极和第一绝缘层暴露衬底的孔中的浮置栅极。 第二绝缘层介于浮置栅极和衬底之间，以及浮置栅极和控制栅极之间。

公开(公告)号：US20060008984A1

公开(公告)日：2006-01-12

申请号：US11138702

申请日：2005-05-26

Applicant: Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/7885

Abstract: A method of forming a split-gate non-volatile memory cell can include forming first and second adjacent floating gates self-aligned to a field oxide region therebetween. An oxide layer is formed covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolates the first and second adjacent floating gates from one another. A control gate is formed on the oxide layer on the first and second adjacent floating gates. Related devices are also disclosed.

Abstract translation: 形成分闸非易失性存储单元的方法可以包括形成与其之间的场氧化物区域自对准的第一和第二相邻浮置栅极。 形成覆盖第一和第二相邻浮动栅极和场氧化物区域的氧化物层，氧化物层将第一和第二相邻浮栅彼此电隔离。 控制栅极形成在第一和第二相邻浮动栅极上的氧化物层上。 还公开了相关设备。

公开(公告)号：US20050269592A1

公开(公告)日：2005-12-08

申请号：US10520855

申请日：2003-11-15

Applicant: Dong-Yeoul Lee ,  Yong-Tae Kim ,  Jin-Hwan Kim ,  Eun-Joung Kim

Inventor： Dong-Yeoul Lee ,  Yong-Tae Kim ,  Jin-Hwan Kim ,  Eun-Joung Kim

IPC: C09K11/77 ,  C09K11/78 ,  H01L29/24 ,  H01L33/50

CPC classification number: C09K11/778 ,  H01L33/502 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  Y02B20/181 ,  H01L2924/00014

Abstract: The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0≦x

Abstract translation: 本发明涉及一种硼酸铽基黄色荧光体及其制备方法以及包含该荧光体的白色半导体发光装置。 本发明的基于硼酸铋的黄色荧光体由通式（Tb 1-xy z）表示，其中N 其中，RE至少为C 1〜C 12 一种选自Y，Lu，Sc，La，Gd，Sm，Pr，Nd，Eu，Dy，Ho，Er，Tm和Yb的稀土元素; A是选自以下的典型金属元素： Li，Na，K，Rb，Cs和Fr; D是选自Al，In和Ga的典型两性元素; 0 <= x <0.5; 0 <= y <0.5; 0

公开(公告)号：US20050068914A1

公开(公告)日：2005-03-31

申请号：US10917756

申请日：2004-08-12

Applicant: Kang-Bok Lee ,  Heyung-Sub Lee ,  Sang-Yeoun Lee ,  Yong-Tae Kim ,  Hyeong-Ho Lee

Inventor： Kang-Bok Lee ,  Heyung-Sub Lee ,  Sang-Yeoun Lee ,  Yong-Tae Kim ,  Hyeong-Ho Lee

IPC: H04J14/02 ,  H04L12/28 ,  H04L12/56 ,  H04L29/06 ,  H04N7/24 ,  H04Q11/00 ,  H04J3/24

CPC classification number: H04Q11/0067 ,  H04J14/0226 ,  H04J14/0227 ,  H04J14/0232 ,  H04J14/0247 ,  H04J14/0252 ,  H04J14/0282 ,  H04L12/2801 ,  H04L47/2441 ,  H04L69/22 ,  H04L2012/561 ,  H04L2012/5658 ,  H04L2012/5664 ,  H04N21/2381 ,  H04N21/4381 ,  H04N21/643 ,  H04Q11/0066 ,  H04Q11/0071

Abstract: Disclosed is a broadcasting and communication combining system based on an Ethernet and a method thereof for providing an Internet service and a multi-channel broadcasting service. The broadcasting and communication combining system and method based on an Ethernet uses Ethernet broadcasting frames on a data communication network to provide a wideband Internet service and a multi-channel digital broadcasting service. To support both Internet and broadcasting with one wavelength, the broadcasting traffic is converted to Ethernet data and multiplexed, and the multiplexed broadcasting traffic comprising the same band (one wavelength) of Internet data is transferred to a subscriber network. The subscriber terminal unit discriminates between Internet traffic and broadcasting traffic and outputs the Internet traffic and the broadcasting traffic to the final receiver.

Abstract translation: 公开了一种基于以太网的广播和通信组合系统及其方法，用于提供因特网服务和多频道广播服务。 基于以太网的广播和通信组合系统和方法使用数据通信网络上的以太网广播帧来提供宽带因特网服务和多频道数字广播服务。 为了支持一个波长的互联网和广播，广播业务被转换成以太网数据并进行多路复用，并且包括相同的（一个波长）的互联网数据的复用的广播流量被传送到用户网络。 用户终端单元鉴别互联网业务和广播业务，并将互联网业务和广播业务输出到最终接收机。

公开(公告)号：US06228723B1

公开(公告)日：2001-05-08

申请号：US09216667

申请日：1998-12-16

Applicant: Yong-Tae Kim

Inventor： Yong-Tae Kim

IPC: H01L21336

CPC classification number: H01L27/11526 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/105 ,  H01L27/11536

Abstract: A method for forming a split gate non-volatile memory cell in a semiconductor device is described. The semiconductor device is defined by a cell array region, a boundary region, and a peripheral logic region. The method eliminates the formation of a conductive layer in the boundary region. The method comprises forming a field oxide layer supported by a semiconductor substrate, forming a gate oxide layer adjacent to the field oxide layer, forming a first conductive layer on the field oxide layer and the gate oxide layer, forming an interpoly oxide layer on the first conductive layer, patterning the first conductive layer and the interpoly oxide layer to develop a terminal edge portion on the field oxide layer overlying the boundary region, forming a second conductive layer over the semiconductor substrate, and patterning the first conductive layer, the second conductive layer and the interpoly oxide layer to from a split gate non-volatile memory cell in the cell array region, wherein the semiconductor substrate does not support any portion of the first and second conductive layers in the boundary region.

Abstract translation: 描述了在半导体器件中形成分离栅非易失性存储单元的方法。 半导体器件由单元阵列区域，边界区域和外围逻辑区域限定。 该方法消除了边界区域中导电层的形成。 该方法包括：形成由半导体衬底支撑的场氧化物层，形成与场氧化物层相邻的栅极氧化层，在场氧化物层和栅氧化层上形成第一导电层，在第一 导电层，图案化第一导电层和多晶硅氧化物层，以在覆盖边界区域的场氧化物层上形成端边缘部分，在半导体衬底上形成第二导电层，以及图案化第一导电层，第二导电层 以及所述多晶硅氧化物层到所述电池阵列区域中的分离栅极非易失性存储单元，其中所述半导体衬底不支持所述边界区域中所述第一和第二导电层的任何部分。