公开(公告)号：US08842903B2

公开(公告)日：2014-09-23

申请号：US12330124

申请日：2008-12-08

Applicant: Seo-Young Hwang ,  Gun-Ill Lee ,  Jae-Yeon Song ,  Yong-Tae Kim

Inventor： Seo-Young Hwang ,  Gun-Ill Lee ,  Jae-Yeon Song ,  Yong-Tae Kim

IPC: H04N13/00 ,  H04N13/04 ,  H04N19/597

CPC classification number: H04N13/189 ,  H04N13/161 ,  H04N13/178 ,  H04N13/359 ,  H04N19/597

Abstract: An apparatus includes a storage unit to receive and store an image file, a processor to parse a media data field of the image file including one or more image data samples and to parse a media header field including an image type data field indicating whether each of the one or more image data samples is one of 2 dimensional (2D) image data and 3 dimensional (3D) stereoscopic image data to generate an image corresponding to one of a 2D image and a 3D stereoscopic image based on the image type data field of the image file, and a display unit to display the generated image according to the image type data field of the image file.

Abstract translation: 一种装置，包括用于接收和存储图像文件的存储单元，处理器，用于解析包括一个或多个图像数据样本的图像文件的媒体数据字段，并解析包括图像类型数据字段的媒体头字段， 一个或多个图像数据样本是二维（2D）图像数据和三维（3D）立体图像数据之一，以基于图像类型数据字段生成对应于2D图像和3D立体图像中的一个的图像 图像文件和显示单元，用于根据图像文件的图像类型数据字段显示生成的图像。

公开(公告)号：US08604535B2

公开(公告)日：2013-12-10

申请号：US12648386

申请日：2009-12-29

Applicant: Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Tea-Kwang Yu ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L29/788 ,  H01L21/762

CPC classification number: H01L29/42324 ,  H01L21/28273 ,  H01L21/76224 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory device includes an active region in which a channel of a transistor is formed in a substrate, element isolation films defining the active region and formed on the substrate at both sides of the channel at a height lower than an upper surface of the active region, a first dielectric layer, a second dielectric layer, and a control gate electrode formed on the active region in this order, and a floating gate electrode formed between the first dielectric layer and the second dielectric layer so as to intersect the length direction of the channel and extend to the upper surfaces of the element isolation films at both sides of the channel, thereby surrounding the channel.

Abstract translation: 非易失性存储器件包括其中在衬底中形成晶体管的沟道的有源区，限定有源区的元件隔离膜，并且形成在通道两侧的基底上，高度低于 有源区，第一电介质层，第二电介质层和控制栅电极，以及在第一介电层和第二电介质层之间形成的与栅极的长度相交的浮栅， 通道的方向并延伸到通道两侧的元件隔离膜的上表面，从而围绕通道。

公开(公告)号：US08476130B2

公开(公告)日：2013-07-02

申请号：US13180613

申请日：2011-07-12

Applicant: Tea-Kwang Yu ,  Byung-Sup Shim ,  Yong-Kyu Lee ,  Bo-Young Seo ,  Yong-Tae Kim

Inventor： Tea-Kwang Yu ,  Byung-Sup Shim ,  Yong-Kyu Lee ,  Bo-Young Seo ,  Yong-Tae Kim

IPC: H01L21/8238

CPC classification number: H01L27/2436 ,  H01L27/105 ,  H01L27/2445 ,  H01L45/1683

Abstract: A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.

Abstract translation: 一种制造半导体器件的方法包括提供具有存储块和在其中定义的逻辑块的衬底，在存储块上形成伪栅极图案; 在伪栅极图案的一侧形成第一导电类型的第一区域和在虚拟栅极图案的另一侧形成第二导电类型的第二区域，以及形成与第一区域电连接的非易失性存储器件。

公开(公告)号：US08150986B2

公开(公告)日：2012-04-03

申请号：US10594616

申请日：2005-03-31

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: G06F15/16 ,  H04M3/42

CPC classification number: H04L41/085 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L41/0813 ,  H04L43/0817 ,  H04L69/14 ,  H04L2012/2849 ,  Y02B70/325 ,  Y02D50/30 ,  Y04S20/228 ,  Y04S40/162 ,  Y04S40/168

Abstract: The present invention discloses a data processing method for application layer based on a living network control protocol. The data processing method for application layer which is based on a predetermined protocol composed of at least a lower layer and an application layer includes the steps of: receiving a predetermined primitive from an upper application software; generating a communication cycle identifier (CycleID) according to the primitive; generating a service description according to the primitive and the communication cycle identifier (CycleID); composing an application layer protocol data unit (APDU) including the primitive; and transmitting the APDU to the lower layer.

Abstract translation: 本发明公开了一种基于生活网络控制协议的应用层数据处理方法。 基于由至少下层和应用层构成的预定协议的应用层的数据处理方法包括以下步骤：从上层应用软件接收预定原语; 根据原语生成通信周期标识符（CycleID）; 根据原语和通信周期标识符（CycleID）生成服务描述; 组成包括原语的应用层协议数据单元（APDU）; 并将APDU发送到下层。

公开(公告)号：US08059473B2

公开(公告)日：2011-11-15

申请号：US12844234

申请日：2010-07-27

Applicant: Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: G11C11/34

CPC classification number: H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

Abstract: A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

Abstract translation: 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。

公开(公告)号：US20110175175A1

公开(公告)日：2011-07-21

申请号：US12956920

申请日：2010-11-30

Applicant: Seung-Jin Yang ,  Yong-Tae Kim

Inventor： Seung-Jin Yang ,  Yong-Tae Kim

IPC: H01L27/088

CPC classification number: H01L21/823425 ,  H01L27/112 ,  H01L27/11253 ,  H01L27/11519 ,  H01L27/11521

Abstract: Provided is a semiconductor device for applying common source lines with individual bias voltages. The device includes a substrate, cell transistors arrayed in a cell matrix shape on the substrate and configured to have gate insulating patterns, gate electrodes, common source regions, drain regions and channel regions. Word lines are configured to electrically interconnect the gate electrodes with each other. Common source lines are shared between only a pair of the neighboring word lines and are configured to electrically interconnect the common source regions with each other. Drain metal contacts and source metal contacts are arranged in a straight line on the drain regions. Bit lines are electrically connected to the drain metal contacts. And impurity regions are configured to control the threshold voltage of the channel regions.

Abstract translation: 提供了一种用于以单独的偏置电压施加公共源极线的半导体器件。 该器件包括衬底，在衬底上以单元矩阵形状排列的单元晶体管，并且被配置为具有栅极绝缘图案，栅极电极，公共源极区域，漏极区域和沟道区域。 字线被配置为将栅电极彼此电互连。 公共源极线仅在一对相邻字线之间共享并且被配置为将公共源极区域彼此电互连。 漏极金属触点和源极金属触点排列在漏极区域的直线上。 位线电连接到漏极金属触点。 并且杂质区域被配置为控制沟道区域的阈值电压。

公开(公告)号：US07903670B2

公开(公告)日：2011-03-08

申请号：US10558434

申请日：2004-05-14

Applicant: Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: H04L12/56

CPC classification number: H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

Abstract: The present invention discloses a home network using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, when the protocol includes an application layer for handling a message for controlling and monitoring the electric device, a network layer for network-connecting the electric device to the network manager, a data link layer for accessing shared transmission medium, and a physical layer for providing a physical interface between the electric device and the network manager, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code for network security when accessing the dependent transmission medium.

Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络。 家庭网络系统包括：基于预定协议的网络; 至少电气设备连接到网络; 以及连接到网络的用于控制和/或监视电子设备的网络管理器，当协议包括用于处理用于控制和监视电子设备的消息的应用层时，网络层将电气设备网络连接到 网络管理器，用于访问共享传输介质的数据链路层，以及用于在电气设备和网络管理器之间提供物理接口的物理层，其中物理层还包括用于向从属传输介质提供接口的特殊协议， 并且所述网络层还包括用于在访问所述依赖传输介质时管理用于网络安全性的归属代码的归属代码控制子层。

公开(公告)号：US07852842B2

公开(公告)日：2010-12-14

申请号：US11547360

申请日：2005-03-31

Applicant: Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: H04L12/28 ,  H04J3/22 ,  H04J3/24

CPC classification number: H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L12/2832 ,  H04L2012/2841 ,  H04L2012/2843 ,  H04L2012/285

Abstract: The present invention discloses a data processing method for network layer in a home network system (1) based on a living network control protocol. The data processing method for network layer based on a protocol, that is composed of at least a physical layer, a data link layer, a network and an application layer, includes the steps of: receiving a message sending primitive (MsgSend) in application layer protocol data unit (APDU) frp, the application layer; according to the message sending primitive (MsgSend), generating a communication cycle description; according to the message sending primitive (MsgSend) and/or the communication cycle description, generating a packet sending primitive (PktSend) in network layer protocol data unit (NPDU); and transmitting the packet sending primitive (PktSend) to the data link layer.

Abstract translation: 本发明公开了一种基于生活网络控制协议的家庭网络系统（1）中网络层的数据处理方法。 基于由至少物理层，数据链路层，网络和应用层组成的协议的网络层的数据处理方法包括以下步骤：在应用层中接收消息发送原语（MsgSend） 协议数据单元（APDU）frp，应用层; 根据消息发送原语（MsgSend），生成通信周期描述; 根据消息发送原语（MsgSend）和/或通信周期描述，在网络层协议数据单元（NPDU）中生成分组发送原语（PktSend）; 并将数据包发送原语（PktSend）发送到数据链路层。

公开(公告)号：US07844680B2

公开(公告)日：2010-11-30

申请号：US11597289

申请日：2005-05-27

Applicant: Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

Inventor： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC: G06F15/16

CPC classification number: H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L12/2832 ,  H04L12/403

Abstract: The present invention discloses a home network system using an LnCP. The home network system includes one or more master devices, one or more slave devices, and a network for connecting the master devices to the slave devices on the basis of a predetermined protocol. In the home network system, the master device performs one or plural communication cycles with the plurality of slave devices at the same time at a predetermined time point, and each slave device performs one communication cycle with the master device at the time point.

Abstract translation: 本发明公开了一种使用LnCP的家庭网络系统。 家庭网络系统包括一个或多个主设备，一个或多个从设备和用于基于预定协议将主设备连接到从设备的网络。 在家庭网络系统中，主设备在预定时间点同时与多个从设备进行一个或多个通信周期，并且每个从设备在该时间点与主设备执行一个通信周期。

公开(公告)号：US20100289071A1

公开(公告)日：2010-11-18

申请号：US12844234

申请日：2010-07-27

Applicant: Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

Inventor： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Yong-Tae Kim

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42328

Abstract: A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

Abstract translation: 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极，形成在浮置栅极上的隧道绝缘层，通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件，在浮动栅极上形成选择栅电极和控制栅电极，从而向相应的栅电极施加电压以写入和擦除数据。