公开(公告)号：US07026672B2

公开(公告)日：2006-04-11

申请号：US10714357

申请日：2003-11-14

申请人： Mahendra Pakala ,  Yiming Huai

发明人： Mahendra Pakala ,  Yiming Huai

IPC分类号： H01L29/76

摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.

公开(公告)号：US20060049472A1

公开(公告)日：2006-03-09

申请号：US10938219

申请日：2004-09-09

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US06985385B2

公开(公告)日：2006-01-10

申请号：US10649119

申请日：2003-08-26

申请人： Paul P. Nguyen ,  Yiming Huai

发明人： Paul P. Nguyen ,  Yiming Huai

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够存储多个位的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。 第一固定层是铁磁性的并且具有沿第一方向固定的第一固定层磁化。 第一非磁性层位于第一被钉扎层和第一自由层之间。 第一自由层是铁磁性的并且具有第一自由层磁化。 第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。 连接层位于第二被钉扎层和第一自由层之间。 第二非磁性层位于第二被钉扎层和第二自由层之间。 第二自由层是铁磁性的并且具有第二自由层磁化。 磁性元件被配置为当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

公开(公告)号：US06967863B2

公开(公告)日：2005-11-22

申请号：US10787701

申请日：2004-02-25

申请人： Yiming Huai

发明人： Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/16

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/08

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，阻挡层，自由层，导电非磁性间隔层和第二钉扎层。 每个钉扎层具有固定层易轴。 被钉扎层容易轴的至少一部分处于垂直方向。 阻挡层位于第一被钉扎层和自由层之间。 间隔层位于自由层和第二被钉扎层之间。 自由层具有自由层易轴，其至少一部分在垂直方向。 磁性元件还被配置为当写入电流通过磁性元件时由于自旋转移效应而允许自由层被切换。 由于垂直磁化（s），自旋转移的写入电流可能会显着降低。

公开(公告)号：US06958927B1

公开(公告)日：2005-10-25

申请号：US10269011

申请日：2002-10-09

申请人： Paul P. Nguyen ,  Yiming Huai

发明人： Paul P. Nguyen ,  Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16 ,  H01L43/08

摘要： A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

摘要翻译： 可用于具有高密度的存储器阵列中的磁性元件包括钉扎层，半金属材料层，间隔物（或阻挡层）层和自由层。 半金属材料层形成在钉扎层上，优选地具有小于约的厚度。 半金属材料层可以形成为连续层或在被钉扎层上形成不连续的。 间隔物（或阻挡层）形成在半金属材料层上，使得间隔物（或阻挡层）是非磁性的并且是导电的（或绝缘的）。 自由层形成在间隔物（或阻挡层）上，并具有当写入电流通过磁性元件时基于自旋转移效应改变方向的第二磁化。

公开(公告)号：US20050185455A1

公开(公告)日：2005-08-25

申请号：US10787701

申请日：2004-02-25

申请人： Yiming Huai

发明人： Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/16

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/08

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，阻挡层，自由层，导电非磁性间隔层和第二钉扎层。 每个钉扎层具有固定层易轴。 被钉扎层容易轴的至少一部分处于垂直方向。 阻挡层位于第一被钉扎层和自由层之间。 间隔层位于自由层和第二被钉扎层之间。 自由层具有自由层易轴，其至少一部分在垂直方向。 磁性元件还被配置为当写入电流通过磁性元件时由于自旋转移效应而使自由层被切换。 由于垂直磁化（s），自旋转移的写入电流可能会显着降低。

公开(公告)号：US20050106810A1

公开(公告)日：2005-05-19

申请号：US10714357

申请日：2003-11-14

申请人： Mahendra Pakala ,  Yiming Huai

发明人： Mahendra Pakala ,  Yiming Huai

IPC分类号： G11C20060101 ,  G11C11/16 ,  G11C17/02 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  H01F10/3272 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08

摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.

摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁性元件并提供至少一个应力辅助层。 多个磁性元件中的每一个被配置为使用自旋转移来写入。 所述至少一个应力辅助层被配置为在书写期间在所述多个磁性元件的至少一个磁性元件上施加至少一个应力。 自旋转移开关电流的减小是由于应力辅助层在写入期间对磁性元件施加的应力。 相对于热波动，磁存储器的稳定性不会受到损害，因为一旦切换电流关闭，两个磁化状态之间的能量势垒就不变。

公开(公告)号：US06775902B1

公开(公告)日：2004-08-17

申请号：US09590898

申请日：2000-06-09

申请人： Yiming Huai ,  Durga P. Ravipati ,  Mark D. Thomas ,  Carlos Corona ,  William D. Jensen

发明人： Yiming Huai ,  Durga P. Ravipati ,  Mark D. Thomas ,  Carlos Corona ,  William D. Jensen

IPC分类号： G11B5127

CPC分类号： G11B5/31 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3153 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A magnetic head is fabricated by providing a substrate with a planar surface, forming at least one cavity in the planar substrate, depositing a second yoke layer in the cavity, forming a second pole tip in the cavity in contact with the second yoke layer, patterning an inductive coil in the cavity, depositing a gap layer over the second pole tip, sputtering a first pole tip over the gap layer, etching the first and second pole tips and the gap layer to form a stack of layers, depositing a protective layer over the stack of layers, leveling the protective layer to expose the first pole tip, and patterning a first yoke layer in contact with the first pole tip.

摘要翻译： 通过提供具有平坦表面的基板来制造磁头，在平面基板中形成至少一个空腔，在空腔中沉积第二磁轭层，在空腔中形成与第二磁轭层接触的第二极尖，图案化 空腔中的感应线圈，在第二极尖上方沉积间隙层，在间隙层上溅射第一极尖，蚀刻第一和第二极尖和间隙层，以形成一叠层，将保护层沉积在 层叠层，使保护层平整以暴露第一极尖端，以及图案化与第一极尖接触的第一磁轭层。

公开(公告)号：US06714444B2

公开(公告)日：2004-03-30

申请号：US10213537

申请日：2002-08-06

申请人： Yiming Huai ,  Paul P. Nguyen

发明人： Yiming Huai ,  Paul P. Nguyen

IPC分类号： G11C1114

CPC分类号： H01F10/3263 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/302

摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

公开(公告)号：US07888755B2

公开(公告)日：2011-02-15

申请号：US11235384

申请日：2005-09-26

申请人： Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano ,  Yiming Huai ,  Zhitao Diao ,  Mahendra Pakala

发明人： Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano ,  Yiming Huai ,  Zhitao Diao ,  Mahendra Pakala

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： G11C11/16

摘要： A storage element 3 has an arrangement in which magnetization fixed layers 31 and 32 are provided above and below a storage layer 17 for storing information based on the magnetization state of a magnetic material through intermediate layers 16 and 18, directions of magnetizations M15 and M19 of ferromagnetic layers 15 and 19 closest to the storage layer 17 of the magnetization fixed layers 31 and 32 above and below the storage layer 17 are opposite to each other, the two intermediate layers 16 and 18 above and below the storage layer 17 have a significant difference between sheet resistivity values thereof and in which the direction of a magnetization M1 of the storage layer 17 is changed with application of an electric current to the lamination layer direction to record information on the storage layer 17.

摘要翻译： 存储元件3具有这样的配置，其中磁化固定层31和32设置在存储层17的上方和下方，用于基于通过中间层16和18的磁性材料的磁化状态来存储信息，磁化M15和M19的方向 最靠近存储层17上方和下方的磁化固定层31和32的存储层17的铁磁层15和19彼此相对，存储层17上方和下方的两个中间层16和18具有显着差异 在其电阻率值之间，并且其中存储层17的磁化M1的方向随施加到层压层方向的电流而改变以在存储层17上记录信息。