公开(公告)号：US08324685B2

公开(公告)日：2012-12-04

申请号：US12866649

申请日：2010-01-20

申请人： Tomohiro Okumura ,  Takayuki Kai ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Takayuki Kai ,  Yuichiro Sasaki

IPC分类号： H01L27/12

CPC分类号： H01L21/2236 ,  H01L29/66803 ,  H01L29/785

摘要： A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).

摘要翻译： 鳍状半导体区域（13）形成在基板（11）上。 在半导体半导体区域的上部和侧部引入在半导体中产生施主电位或受主电平的第一杂质，并且在上部进一步引入氧或氮作为第二杂质， 翅片半导体区域（13）的侧面部分。

公开(公告)号：US20070059848A1

公开(公告)日：2007-03-15

申请号：US10570787

申请日：2004-09-06

申请人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

发明人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

IPC分类号： H01L21/66 ,  H01L21/26 ,  H01L21/04 ,  H01L21/00

CPC分类号： H01L21/265

摘要： Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.

摘要翻译： 这里公开了一种控制待掺杂到待等离子体掺杂的物体（1）中的掺杂剂的剂量的方法。 根据该方法，掺杂控制由以下处理形成：确定物体（1）的温度，与物体（1）碰撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体（1）的温度由中性气体计算剂量，以及来自与物体（1）碰撞的确定量的含离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

公开(公告)号：US06822247B2

公开(公告)日：2004-11-23

申请号：US10334544

申请日：2002-12-30

申请人： Yuichiro Sasaki

发明人： Yuichiro Sasaki

IPC分类号： H01J37317

CPC分类号： H01J37/304 ,  G01R19/0061 ,  G21K5/04 ,  H01J37/3171 ,  H01J2237/24564 ,  H01J2237/31703 ,  H01J2237/3175

摘要： An ion irradiation system has a leader and a trailer at its beam line, and at least one non-beam-breaking beam-current measuring instrument is prepared between the leader and the trailer. The leader is an ion source, and the trailer is a process chamber where semiconductor wafers are placed. The beam-current measuring instrument is placed before the wafers.

摘要翻译： 离子辐射系统在其束线处具有引导件和拖车，并且在引导件和拖车之间准备至少一个非束流束流电流测量仪器。 领导者是离子源，拖车是放置半导体晶片的处理室。 光束电流测量仪器放置在晶片之前。

公开(公告)号：USD329580S

公开(公告)日：1992-09-22

申请号：US527795

申请日：1990-05-24

申请人： Yuichiro Sasaki ,  Toshiaki Uchida

设计人： Yuichiro Sasaki ,  Toshiaki Uchida

公开(公告)号：US08574972B2

公开(公告)日：2013-11-05

申请号：US13264660

申请日：2010-10-28

申请人： Yuichiro Sasaki ,  Masafumi Kubota ,  Shigenori Hayashi

发明人： Yuichiro Sasaki ,  Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L21/00

CPC分类号： H01L29/66803 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/2236

摘要： After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).

摘要翻译： 在衬底（11）上形成鳍状半导体区域（13）之后，使用含杂质的气体和含氧气体在鳍状半导体区域（13）上进行等离子体掺杂。 这在散热片半导体区域（13）的至少侧边部形成杂质掺杂区域（17）。

公开(公告)号：US20110230038A1

公开(公告)日：2011-09-22

申请号：US13051436

申请日：2011-03-18

申请人： Shigenori Hayashi ,  Masafumi Kubota ,  Yuichiro Sasaki

发明人： Shigenori Hayashi ,  Masafumi Kubota ,  Yuichiro Sasaki

IPC分类号： H01L21/263

CPC分类号： H01L21/2236

摘要： Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

摘要翻译： 使用由含有作为掺杂剂的杂质的气体制成的等离子体掺杂进行。 在这种情况下，以脉冲的形式提供等离子体产生高频功率和偏置高频功率中的至少一个。

公开(公告)号：US07666770B2

公开(公告)日：2010-02-23

申请号：US10570787

申请日：2004-09-06

申请人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

发明人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

IPC分类号： H01L21/42

CPC分类号： H01L21/265

摘要： A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.

摘要翻译： 提供了一种方法，用于控制掺杂到等离子体掺杂中待处理物体中的掺杂剂的剂量。 根据该方法，掺杂控制由以下处理形成：确定物体的温度，与物体相撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体的温度由中性气体计算剂量，以及从确定量的与物体碰撞的掺杂剂的离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

公开(公告)号：US20060172613A1

公开(公告)日：2006-08-03

申请号：US10549153

申请日：2004-03-16

申请人： Yuichiro Sasaki

发明人： Yuichiro Sasaki

IPC分类号： H01R13/24

CPC分类号： H01R13/2421

摘要： The pressure contact holding-type connector in accordance with the present invention is configured to be interposed between opposing electrodes; a conductive pin is located in at least one end portion of each through-hole of an insulating housing having a through-hole oriented in the thickness direction; a flange section provided at the conductive pin is mated with a small-diameter section provided in one end portion of the through-hole to maintain at least part of the conductive pin in a state of accommodation inside the through-hole; and a conductive coil spring having one end thereof mated with the flange section provided at the conductive pin and pushing the conductive pin with a snap to the outside of the through-hole is installed inside the through-hole. The conductive pin can be disposed at both ends of the coil spring.

摘要翻译： 根据本发明的压力保持型连接器构造成插入在相对的电极之间; 导电销位于具有沿厚度方向取向的通孔的绝缘壳体的每个通孔的至少一个端部中; 设置在导电销上的凸缘部与设置在通孔的一个端部中的小直径部分配合，以将导电销的至少一部分保持在通孔内容纳的状态; 并且其导电螺旋弹簧的一端与设置在导电销处的凸缘部分配合，并且将导电销以卡扣推到通孔外侧安装在通孔的内部。 导电销可以设置在螺旋弹簧的两端。

公开(公告)号：US20060164026A1

公开(公告)日：2006-07-27

申请号：US11050817

申请日：2005-01-27

申请人： Yuichiro Sasaki ,  Kichiji Hatanaka

发明人： Yuichiro Sasaki ,  Kichiji Hatanaka

IPC分类号： H05H13/00

CPC分类号： H05H13/00

摘要： Disclosed here is a cyclotron having a beam phase selector capable of controlling phase widths of beams and improving beam permeability for increasing beam current. The cyclotron contains an acceleration voltage applying section and a beam blocking section, at least any one of the two sections has a movable structure. While a particle is passing across a gap between dee electrodes, the acceleration voltage applying section applies RF acceleration voltage to the particle, and further applies RF acceleration voltage having a phase different from the phase of previously applied RF acceleration voltage. The beam blocking section blocks undesired particles. Preferably, the acceleration voltage applying section at least has an electrode having an opening in a direction of the core of the cyclotron. Also preferably, operations on phase-width control can be performed outside the cyclotron, with vacuum condition in the cyclotron maintained.

摘要翻译： 这里公开了一种回旋加速器，其具有能够控制波束的相位宽度的光束相位选择器，并提高波束透过率以增加束流。 回旋加速器包括加速电压施加部分和束阻挡部分，两个部分中的至少任一个具有可移动结构。 当粒子通过dee电极之间的间隙时，加速电压施加部分向粒子施加RF加速电压，并且还施加具有与先前施加的RF加速电压的相位不同的相位的RF加速电压。 光束阻挡部分阻止不期望的颗粒。 优选地，加速电压施加部至少具有在回旋加速器的芯的方向上具有开口的电极。 还优选地，可以在回旋加速器外进行相位控制的操作，保持回旋加速器中的真空条件。

公开(公告)号：US06978533B1

公开(公告)日：2005-12-27

申请号：US10048644

申请日：2000-08-07

申请人： Fumitoshi Yamashita ,  Yuichiro Sasaki

发明人： Fumitoshi Yamashita ,  Yuichiro Sasaki

IPC分类号： H01F1/08 ,  B22F3/00 ,  C22C38/00 ,  H01F1/057 ,  H01F41/02 ,  H02K15/00 ,  H02K15/14 ,  H02K15/16

CPC分类号： H01F41/0266 ,  H01F1/0578 ,  Y10T29/49009 ,  Y10T29/4902 ,  Y10T29/5147 ,  Y10T29/53143

摘要： A powder molded magnet manufactured by a method comprising the steps of: (1) forming a granular compound of diameter of not more than 250 μm with a rare earth-iron rapid-quenched flake, which has not more than 150 μm in diameter, being coarsely ground if necessary, and a binder, (2) dry-blending the granular compound with fatty acid metallic soap powder, (3) forming compressed powder from the granular compound dry-blended with the fatty acid metallic soap powder, by powder molding, and (4) heat-treating the compressed powder to a temperature higher than a thermally dissociating temperature of stabilized isocyanate.

摘要翻译： 一种粉末成型磁铁，其制造方法包括以下步骤：（1）直径不超过150μm的稀土铁快速骤冷片形成直径不大于250μm的粒状化合物，为 必要时粗磨，粘合剂，（2）将粒状化合物与脂肪酸金属皂粉末混合，（3）通过粉末成型从与脂肪酸金属皂粉末混合的粒状化合物形成压缩粉末， 和（4）将压缩粉末热处理至高于稳定化的异氰酸酯的热解离温度的温度。