Abstract:
A backlight unit and a liquid crystal display having the backlight are provided. The backlight unit includes a plurality of light emitting diode (LED) chips, a light guide plate for converting light generated from the LED chips into surface light, and a plurality of optical guide modules corresponding to the respective LED chips and disposed between the LED chips and the light guide plate.
Abstract:
A liquid crystal display device of an in-plane switching mode and a method for manufacturing the same are disclosed. The liquid crystal display device of an in-plane switching mode includes gate lines and data lines which cross each other on a substrate to define pixel regions, thin film transistors which are formed at crossing portions of the gate lines and the data lines, first common lines formed on the same layer as the gate lines, first electrode fingers which have a plurality of diverged first fingers and include L-shaped protruded patterns at one ends of the first fingers in the pixel regions, and second electrode fingers which have second fingers formed alternately with the first fingers and include |-shaped patterns at one ends of the second fingers in the pixel regions, wherein the L-shaped protruded patterns and the |-shaped patterns overlap partly with the first common lines.
Abstract:
A repeater for relaying data signals between two nodes is provided. The repeater includes a first signal processor that amplifies the received data signals, a path controller that transmits initial information of the received data signal through a first path to determine if the received data signal is from a specific local area and transmits data signals following the initial information through a second path to amplify the data signals following the initial information, a second signal processor that amplifies and transmits the data signal, and a data selection processor that allows the data signals following the initial information to be transmitted through the second path when it is determined using the initial information received that the received data signal is from the specific local area.
Abstract:
Provided are a level shifter circuit and a corresponding method for controlling voltage levels of a clock signal and an inverted clock signal for driving gate lines of a ASG thin film transistor liquid crystal display panel, where the level shifter circuit includes first and second level shifters, the first level shifter controls the voltage level of the clock signal to swing between a negative external voltage level and a positive external voltage level in response to a clock activating signal, and increases the voltage level of the clock signal from the negative external voltage level to a power supply voltage level or decreases it from the positive external voltage level to a ground voltage level while a pre-charge clock activating signal is activated, the second level shifter controls the voltage level of the inverted clock signal to swing between the negative external voltage level and the positive external voltage level in response to an inverted clock activating signal, and increases the voltage level of the inverted clock signal from the negative external voltage level to the power supply voltage level or decreases it from the positive external voltage level to the ground voltage level while an inverted pre-charge clock activating signal is activated, and the level shifter circuit increases or decreases the voltage levels of the clock signal and inverted clock signal using a battery voltage or a ground voltage, thereby reducing current consumption caused by the increase or decrease in the voltage level.
Abstract:
A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.
Abstract:
A thermal printer and a printing method are provided. The thermal printer includes a thermal printhead for applying a predetermined amount of heat to a thermal recording paper to develop a print layer provided on the thermal recording paper; a feeding roller for feeding the thermal recording paper, a platen roller for facing the thermal printhead to support the thermal recording paper, wherein the thermal recording paper passes between the thermal printhead and the platen roller, a first encoder sensor for detecting a rotation of the platen roller, a second encoder sensor for detecting rotation of the feeding roller; a counting unit for counting first and second pulse signals generated from the first and second encoder sensors, respectively, and a switching unit of the first and second pulse signals as a variable to control the feeding of the thermal recording paper.
Abstract:
A method for manufacturing a CMOS image sensor is provided. The method includes forming a gate electrode on a semiconductor layer having defined regions of a photodiode region and a logic region, such that a gate oxide film is interposed between the semiconductor layer and the gate electrode; forming sidewall insulating films at both sides of the gate electrode, followed by forming a salicide-preventing film over an overall surface of the gate electrode and insulating films; removing the salicide-preventing film formed in the logic region; and removing a portion of the sidewall insulating films exposed by removing the salicide-preventing film, thereby exposing an upper side surface of the gate electrode.
Abstract:
An image sensor and fabricating method thereof are provided. A gate electrode is formed on a semiconductor substrate with a photodiode on one side and a low-concentration drain on the other side. A silicide blocking pattern covers the photodiode, the gate electrode, and part of the low-concentration drain, such that an aperture exposes a portion of the low-concentration drain. A high-concentration drain is formed in the substrate under the aperture.
Abstract:
A thermal printer is provided including a cable which connects a main board and a recording head to form an image on a print medium by heating both surfaces of the print medium. The thermal printer includes a rotating unit rotatably installed within a frame. The thermal printer also includes a recording head, a support member, and a main board installed on the frame substantially above the first surface of the print medium. The main board applies power and provides image data to the recording head. A flexible cable is disposed on one side or both sides of the print medium so as to not to interfere with a transfer of the print medium and a reciprocating rotation of the recording head. The flexible cable connects the main board and the recording head. A control guide is disposed on a path where the flexible cable moves within the frame to control a degree to which the flexible cable is loosened when the recording head is located at a certain position.
Abstract:
A CMOS image sensor and a method for fabricating the same is disclosed, to decrease a darkcurrent generated in the boundary between a diffusion area of a photodiode and a device isolation layer, which includes a first conductive type semiconductor substrate having an active area and a device isolation area, the active area including a photodiode and a transistor; a device isolation layer formed in the device isolation area of the semiconductor substrate; a second conductive type diffusion area formed in the photodiode of the semiconductor substrate at a predetermined interval from the device isolation layer; a gate insulating layer and a gate electrode formed in the transistor of the semiconductor substrate; and a first conductive type first diffusion area formed in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer.