Abstract:
A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
Abstract:
Provided are a method of preparing a graphene shell and a graphene shell prepared using the method. A first heat treatment is performed on a mixture of an organic solvent and a graphitization catalyst so as to carburize the graphitization catalyst with carbon decomposed from the organic solvent. The graphitization catalyst is in the form of particles. A second heat treatment process is performed on the carburized graphitization catalyst in an inert or reductive gas atmosphere to thereby form graphene shells on surfaces of the carburized graphitization catalyst
Abstract:
A carbon nanotube (CNT) film having a transformed substrate structure and a manufacturing method thereof. The CNT film includes a transparent substrate, a plurality of three-dimensional (3D) structures formed distant from each other on the transparent substrate, and carbon nanotubes (CNTs) deposited on the transparent substrate where the plurality of 3D structures is not formed. The method includes forming a plurality of 3D structures distant from each other on a transparent substrate, and depositing a CNT solution on the substrate with the plurality of 3D structures formed thereon, wherein the CNT solution is deposited into a portion of the transparent substrate where the 3D structures are not formed. Thus, the deposition mechanism of the CNT solution is controlled to thereby increase the transparency of the CNT film and the electrical conductivity of an electrode including the CNT film.
Abstract:
Disclosed herein are methods for manufacturing a carbon nanotube (CNT) having electrons that are injected, with treatment with a reducing agent, a CNT manufactured according to the method, and an electric device comprising the CNT a CNT manufactured according to the method. The electronic characteristics such as the doped level and the band gap of the CNT having electrons injected therein can be widely and easily adjusted by changing the treatment conditions of the reducing agent.
Abstract:
Provided is method of selectively separating carbon nanotubes into metallic carbon nanotubes and semiconducting carbon nanotubes, the method including: preparing a mixture including a dispersant, carbon nanotubes, and a solvent; dispersing the carbon nanotubes in the mixture; and separating the semiconducting carbon nanotubes from the mixture in which the carbon nanotubes are dispersed, wherein the dispersant is an oligomer including about 2 to about 24 repeat units, each including a head moiety and a tail moiety, wherein the head moiety comprises 1 to about 5 aromatic hetero rings, and the tail moiety comprises a hydrocarbon chain or chains connected to the head moiety.
Abstract:
Disclosed is a carbon nanotube (CNT) thin film having metallic nanoparticles. The CNT thin film includes a plastic transparent substrate and a CNT composition coated on the substrate. The CNT composition includes a CNT and metallic nanoparticles distributed on the CNT surface. The plastic transparent substrate is flexible. The metallic nanoparticles are formed by heating a metallic precursor adsorbed in the CNT surface. A method of manufacturing the CNT thin film having metallic nanoparticles is also disclosed. A CNT-dispersed solution is prepared by mixing a CNT with a dispersant or a dispersion solvent. The CNT-dispersed solution is used to form a CNT thin film. Metallic precursors are implanted in the CNT thin film. Then, a heat-treatment is applied to transform the metallic precursors into metallic particles including metallic nanoparticles.
Abstract:
Disclosed herein is an ultraviolet (UV) light-blocking composition comprising a metal nanoparticle that absorbs and blocks a UV light wavelength using a surface plasmon-absorbing wavelength, and a dielectric. The UV light-blocking composition is capable of absorbing and blocking a UV light wavelength or, a specific wavelength, using the surface plasmon-absorbing wavelength of the metal nanoparticle or, the plasmon-absorbing wavelength transited by the dielectric, thereby demonstrating increased visibility when applied to an image display apparatus such as a mobile phone, and the like.
Abstract:
Disclosed herein is a composition for forming a low dielectric thin film, which includes silane monomers having only any one of stereoisomer, or a siloxane polymer produced by polymerizing the monomers, and a method of producing the low dielectric thin film using the same. When using the composition, mechanical properties are excellent because tacticity of a matrix is improved, and formation of pores is increased due to a molecular free volume, thus it is possible to produce a low dielectric thin film having low dielectricity.