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1.发明授权Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法公开(公告)号：US07750176B2
公开(公告)日：2010-07-06
申请号：US12458009
申请日：2009-06-29
申请人： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
发明人： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
CPC分类号： C07F7/21 , Y10T428/31663
摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。
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2.发明申请Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound 有权多功能环状硅氧烷化合物以及使用由该化合物制备的硅氧烷类聚合物制备电介质膜的方法公开(公告)号：US20090269942A1
公开(公告)日：2009-10-29
申请号：US12458009
申请日：2009-06-29
申请人： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
发明人： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
IPC分类号： H01L21/312 , C07F7/21
CPC分类号： C07F7/21 , Y10T428/31663
摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。
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3.发明授权Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer 有权多官能环状硅氧烷化合物，由该化合物制备的硅氧烷类聚合物和使用聚合物制备电介质膜的方法公开(公告)号：US07576230B2
公开(公告)日：2009-08-18
申请号：US10878119
申请日：2004-06-29
申请人： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
发明人： Hyeon Jin Shin , Hyun Dam Jeong , Jong Baek Seon , Sang Kook Mah , Jin Heong Yim , Jae Jun Lee , Kwang Hee Lee , Jung Bae Kim
CPC分类号： C07F7/21 , Y10T428/31663
摘要： A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.
摘要翻译： 多官能环状硅氧烷化合物（A），由化合物（A）或化合物（A）制备的硅氧烷类（共）聚合物和至少一种具有有机桥（B）的Si单体，无环烷氧基 硅烷单体（C）和直链硅氧烷单体（D）; 以及使用该聚合物制备电介质膜的方法。 本发明的硅氧烷化合物具有高反应性，因此由该化合物制备的聚合物的机械性能，热稳定性和抗裂性优异，并且由于与常规孔产生材料的相容性而具有低的介电常数。 此外，低含量的碳和高含量的SiO 2增强了其在制造半导体的过程中的适用性，其中它被广泛用作电介质膜。
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公开(公告)号：US07582718B2
公开(公告)日：2009-09-01
申请号：US10868222
申请日：2004-06-16
申请人： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
发明人： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
IPC分类号： C08G77/60
CPC分类号： C08G77/50 , C07F7/0838 , C07F7/1804
摘要： A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
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5.发明申请Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权多官能直链硅氧烷化合物，由该化合物制备的硅氧烷聚合物，以及通过使用聚合物形成电介质膜的方法公开(公告)号：US20090321894A1
公开(公告)日：2009-12-31
申请号：US12458532
申请日：2009-07-15
申请人： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
发明人： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
CPC分类号： C08G77/50 , C07F7/0838 , C07F7/1804
摘要： A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
摘要翻译： 新型多功能直链硅氧烷化合物，由硅氧烷化合物制备的硅氧烷聚合物，以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能（例如模量），优异的热稳定性，低碳含量和低吸湿性，并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能，热稳定性和抗裂性，而且具有低吸湿性和与成孔材料的优异相容性，导致低的介电常数。 此外，硅氧烷聚合物保留相对低的碳含量，但SiO 2含量高，从而改善了对半导体器件的适用性。 因此，硅氧烷聚合物有利地用作半导体器件的介电膜的材料。
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6.发明授权Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer 有权多官能直链硅氧烷化合物，由该化合物制备的硅氧烷聚合物，以及通过使用聚合物形成电介质膜的方法公开(公告)号：US08053173B2
公开(公告)日：2011-11-08
申请号：US12458532
申请日：2009-07-15
申请人： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
发明人： Jae Jun Lee , Jong Baek Seon , Hyun Dam Jeong , Jin Heong Yim , Hyeon Jin Shin
CPC分类号： C08G77/50 , C07F7/0838 , C07F7/1804
摘要： A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiO2 content, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.
摘要翻译： 新型多功能直链硅氧烷化合物，由硅氧烷化合物制备的硅氧烷聚合物，以及通过使用硅氧烷聚合物形成电介质膜的方法。 线性硅氧烷聚合物具有增强的机械性能（例如模量），优异的热稳定性，低碳含量和低吸湿性，并且通过直链硅氧烷化合物的均聚或线性硅氧烷化合物与另一单体的共聚制备。 可以通过热固化含有高反应性的硅氧烷聚合物的涂布溶液来制造电介质膜。 由硅氧烷化合物制备的硅氧烷聚合物不仅具有令人满意的机械性能，热稳定性和抗裂性，而且具有低吸湿性和与成孔材料的优异相容性，导致低的介电常数。 此外，硅氧烷聚合物保留相对低的碳含量，但SiO 2含量高，从而改善了对半导体器件的适用性。 因此，硅氧烷聚合物有利地用作半导体器件的介电膜的材料。
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7.发明授权Semiconductor thin film using self-assembled monolayers and methods of production thereof 有权使用自组装单层的半导体薄膜及其制造方法公开(公告)号：US07633087B2
公开(公告)日：2009-12-15
申请号：US11417026
申请日：2006-05-03
CPC分类号： C23C18/1225 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C18/1204 , C23C18/1275 , H01L21/02381 , H01L21/02488 , H01L21/02499 , H01L21/02502 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02658
摘要： A semiconductor thin film using a self-assembled monolayer (SAM) and a method for producing the semiconductor thin film are provided. According to the semiconductor thin film, a uniform inorganic seed layer is formed by using the self-assembled monolayer so that the adhesion between an insulating layer and a semiconductor layer is enhanced and thus the surface tension is reduced, thereby allowing the semiconductor thin film to have high quality without defects.
摘要翻译： 提供了使用自组装单层（SAM）的半导体薄膜和制造半导体薄膜的方法。 根据半导体薄膜，通过使用自组装单层形成均匀的无机种子层，使得绝缘层和半导体层之间的粘附性增强，因此表面张力降低，从而使半导体薄膜 具有高质量无缺陷。
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8.发明授权公开(公告)号：US08501595B2
公开(公告)日：2013-08-06
申请号：US11567552
申请日：2006-12-06
申请人： Eun Joo Jang , Hyun Dam Jeong , Shin Ae Jun , Jong Baek Seon
发明人： Eun Joo Jang , Hyun Dam Jeong , Shin Ae Jun , Jong Baek Seon
摘要： Disclosed herein is a thin film prepared using a mixture of nanocrystal particles and a molecular precursor. The nanocrystal is used in the thin film as a nucleus for crystal growth to minimize grain boundaries of the thin film and the molecular precursor is used to form the same crystal structure as the nanocrystal particles, thereby improving the crystallinity of the thin film. The thin film can be used effectively in a variety of electronic devices, including thin film transistors, electroluminescence devices, memory devices, and solar cells. Further disclosed is a method for preparing the thin film.
摘要翻译： 本文公开了使用纳米晶体颗粒和分子前体的混合物制备的薄膜。 在薄膜中使用纳米晶体作为晶体生长的核以使薄膜的晶界最小化，并且分子前体用于形成与纳米晶体颗粒相同的晶体结构，从而提高薄膜的结晶度。 该薄膜可以有效地用于各种电子器件，包括薄膜晶体管，电致发光器件，存储器件和太阳能电池。 还公开了一种制备薄膜的方法。
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9.发明授权Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof 有权电介质薄膜的组成，使用其的金属氧化物电介质薄膜及其制备方法公开(公告)号：US07989361B2
公开(公告)日：2011-08-02
申请号：US11831380
申请日：2007-07-31
申请人： Jong Baek Seon , Hyun Dam Jeong , Sang Yoon Lee
发明人： Jong Baek Seon , Hyun Dam Jeong , Sang Yoon Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/02282 , H01L21/02175 , H01L21/02337 , H01L21/316 , H01L29/4908 , H01L29/78681 , H01L29/7869 , H01L51/0525
摘要： This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.
摘要翻译： 本发明涉及能够进行低温处理的电介质薄膜用组合物。 具体地，本发明涉及使用该组合物形成的金属氧化物电介质薄膜，其制备方法，包括该电介质薄膜的晶体管器件和包括晶体管器件的电子器件。 已经施加了电介质薄膜的电子器件表现出优异的电性能，从而满足低工作电压和高电荷迁移率。
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10.发明申请公开(公告)号：US20070298160A1
公开(公告)日：2007-12-27
申请号：US11567552
申请日：2006-12-06
申请人： Eun Joo Jang , Hyun Dam Jeong , Shin Ae Jun , Jong Baek Seon
发明人： Eun Joo Jang , Hyun Dam Jeong , Shin Ae Jun , Jong Baek Seon
摘要： Disclosed herein is a thin film prepared using a mixture of nanocrystal particles and a molecular precursor. The nanocrystal is used in the thin film as a nucleus for crystal growth to minimize grain boundaries of the thin film and the molecular precursor is used to form the same crystal structure as the nanocrystal particles, thereby improving the crystallinity of the thin film. The thin film can be used effectively in a variety of electronic devices, including thin film transistors, electroluminescence devices, memory devices, and solar cells.Further disclosed is a method for preparing the thin film.
摘要翻译： 本文公开了使用纳米晶体颗粒和分子前体的混合物制备的薄膜。 在薄膜中使用纳米晶体作为晶体生长的核以使薄膜的晶界最小化，并且分子前体用于形成与纳米晶体颗粒相同的晶体结构，从而提高薄膜的结晶度。 该薄膜可以有效地用于各种电子器件，包括薄膜晶体管，电致发光器件，存储器件和太阳能电池。 还公开了一种制备薄膜的方法。
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