公开(公告)号：US09914043B1

公开(公告)日：2018-03-13

申请号：US15424833

申请日：2017-02-04

Applicant: Bin Lu ,  Alan Lu

Inventor： Bin Lu ,  Alan Lu

IPC: A63C17/12 ,  A63C17/01 ,  B60K7/00

CPC classification number: A63C17/12 ,  A63C17/015 ,  A63C2203/12 ,  B60K7/0007 ,  B60K2007/0038 ,  B60K2007/0092 ,  B60Y2200/81 ,  B60Y2200/91 ,  B60Y2400/112

Abstract: The system disclosed and claimed herein is an electric propelling wheel and battery/motor control subsystem enabling the retrofitting of a standard skateboard, having standard truck and wheels, with electrical propulsion capabilities.

公开(公告)号：US09777748B2

公开(公告)日：2017-10-03

申请号：US12753930

申请日：2010-04-05

Applicant: Bin Lu ,  Santosh Kumar Sharma ,  Ting Yan ,  Steven A. Dimino

Inventor： Bin Lu ,  Santosh Kumar Sharma ,  Ting Yan ,  Steven A. Dimino

IPC: G08B21/00 ,  F04D29/66 ,  F04D15/00

CPC classification number: F04D29/669 ,  F04D15/0077 ,  F04D15/0088

Abstract: A system and method for detecting cavitation in pumps for fixed and variable supply frequency applications is disclosed. The system includes a controller having a processor programmed to repeatedly receive real-time operating current data from a motor driving a pump, generate a current frequency spectrum from the current data, and analyze current data within a pair of signature frequency bands of the current frequency spectrum. The processor is further programmed to repeatedly determine fault signatures as a function of the current data within the pair of signature frequency bands, repeatedly determine fault indices based on the fault signatures and a dynamic reference signature, compare the fault indices to a reference index, and identify a cavitation condition in a pump based on a comparison between the reference index and a current fault index.

公开(公告)号：US09720855B2

公开(公告)日：2017-08-01

申请号：US14676518

申请日：2015-04-01

Applicant: Chang-Eun Choi ,  Bin Lu ,  Yang Yu ,  Karnik Shah ,  Hingkwan Huen

Inventor： Chang-Eun Choi ,  Bin Lu ,  Yang Yu ,  Karnik Shah ,  Hingkwan Huen

IPC: G06F13/12 ,  G06F13/38 ,  G06F13/00 ,  G06F13/10 ,  G06F9/455

CPC classification number: G06F9/45533 ,  G06F9/45558 ,  G06F13/102 ,  G06F2009/45579 ,  G06F2009/45583

Abstract: An embodiment includes a system, comprising: a device configured to present a logical device and enable a virtual device in response to a control signal; and a processor coupled to the device and configured to: present the logical device through a first device interface; transmit the control signal to the device to enable the virtual device; and after the virtual device is enabled, present the virtual device through a second device interface.

公开(公告)号：US20160346666A1

公开(公告)日：2016-12-01

申请号：US14726480

申请日：2015-05-30

Applicant: Bin Lu ,  Alan Lu

Inventor： Bin Lu ,  Alan Lu

IPC: A63C17/01

CPC classification number: A63C17/017 ,  A63C11/028 ,  A63C17/01 ,  A63C17/012 ,  A63C17/015 ,  A63C17/265 ,  A63C2203/10 ,  A63C2203/42 ,  B62K3/002 ,  B62K15/00 ,  B62K15/006

Abstract: The system and method invention herein disclosed and claimed is a folding skateboard. It can be folded while at rest, on the ground, by applying pressure to one end as the bi-folding deck portions pivot toward one another and come to rest in a fully folded position.

Abstract translation: 本文公开和要求保护的系统和方法发明是折叠滑板。 当双折叠甲板部分彼此枢转并在完全折叠的位置休息时，可以在静止时在地面上折叠，同时向一端施加压力。

公开(公告)号：US20160064539A1

公开(公告)日：2016-03-03

申请号：US14442546

申请日：2013-11-15

Applicant: Bin Lu ,  Min Sun ,  Tomas Palacios

Inventor： Bin Lu ,  Min Sun ,  Tomas Palacios

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66 ,  H01L21/306 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L21/30612 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Abstract translation: 半导体结构具有包括第一半导体材料的第一层和包括第二半导体材料的第二层。 第一半导体材料可以使用第一蚀刻工艺在第二半导体材料上选择性地蚀刻。 第一层设置在第二层上。 凹部至少设置在第一层中。 还描述了形成包括凹部的半导体结构的方法。 该方法包括使用第一蚀刻工艺蚀刻第一层中的区域。 第一层包括第一半导体材料。 第一蚀刻工艺在第一层下面的第二层停止。 第二层包括第二半导体材料。

公开(公告)号：US09170303B2

公开(公告)日：2015-10-27

申请号：US13088846

申请日：2011-04-18

Applicant: Bin Lu ,  Thomas G. Habetler

Inventor： Bin Lu ,  Thomas G. Habetler

IPC: G01R31/34 ,  H02P23/14

CPC classification number: G01R31/343 ,  H02P23/14

Abstract: A system and method for determining electric motor efficiency includes a monitoring system having a processor programmed to determine efficiency of an electric motor under load while the electric motor is online. The determination of motor efficiency is independent of a rotor speed measurement. Further, the efficiency is based on a determination of stator winding resistance, an input voltage, and an input current. The determination of the stator winding resistance occurs while the electric motor under load is online.

Abstract translation: 用于确定电动机效率的系统和方法包括监视系统，其具有被编程为在电动机在线时确定负载下的电动机的效率的处理器。 电机效率的确定与转子速度测量无关。 此外，效率基于定子绕组电阻，输入电压和输入电流的确定。 定子绕组电阻的确定发生在负载下的电动机在线时。

公开(公告)号：US08918346B2

公开(公告)日：2014-12-23

申请号：US13304834

申请日：2011-11-28

Applicant: Bin Lu ,  Yi Yang ,  Santosh K. Sharma ,  Prachi Zambare ,  Mayura A. Madane

Inventor： Bin Lu ,  Yi Yang ,  Santosh K. Sharma ,  Prachi Zambare ,  Mayura A. Madane

IPC: G06F15/18 ,  G06E1/02 ,  G06G7/10

CPC classification number: H02J13/00 ,  H02J3/00

Abstract: A method identifies electric load types of a plurality of different electric loads. The method includes providing a load feature database of a plurality of different electric load types, each of the different electric load types including a first load feature vector having at least four different load features; sensing a voltage signal and a current signal for each of the different electric loads; determining a second load feature vector comprising at least four different load features from the sensed voltage signal and the sensed current signal for a corresponding one of the different electric loads; and identifying by a processor one of the different electric load types by determining a minimum distance of the second load feature vector to the first load feature vector of the different electric load types of the load feature database.

Abstract translation: 一种方法识别多个不同电负载的电负载类型。 该方法包括提供多种不同电负载类型的负载特征数据库，每种不同的电负载类型包括具有至少四个不同负载特征的第一负载特征向量; 感测每个不同电负载的电压信号和电流信号; 确定第二负载特征向量，其包括来自所感测的电压信号的至少四个不同的负载特征和用于所述不同电负载中的相应一个的感测的电流信号; 以及通过确定所述第二负载特征向量与所述负载特征数据库的不同电负载类型的所述第一负载特征向量的最小距离，由处理器识别所述不同电负载类型之一。

公开(公告)号：US08759876B2

公开(公告)日：2014-06-24

申请号：US12574146

申请日：2009-10-06

Applicant: Bin Lu ,  Tomás Palacios

Inventor： Bin Lu ,  Tomás Palacios

IPC: H01L29/66

CPC classification number: H01L29/7788 ,  H01L29/2003 ,  H01L29/51 ,  H01L29/7787

Abstract: A heterojunction for use in a transistor structure is provided. The heterojunction includes a barrier layer positioned beneath a gate region of the transistor structure. The barrier layer includes nitride-based semiconductor materials. A channel layer provides electrical conduction An intermediate layer near the barrier layer and including nitride-based semiconductor materials having a wider bandgap than the channel layer.

Abstract translation: 提供了一种用于晶体管结构的异质结。 异质结包括位于晶体管结构的栅极区域下方的势垒层。 阻挡层包括氮化物基半导体材料。 沟道层提供电传导在阻挡层附近的中间层，并且包括具有比沟道层更宽的带隙的氮化物基半导体材料。

公开(公告)号：US08676356B2

公开(公告)日：2014-03-18

申请号：US12351582

申请日：2009-01-09

Applicant: Bin Lu ,  Ting Yan

Inventor： Bin Lu ,  Ting Yan

IPC: G05B13/00

CPC classification number: H02P23/0077

Abstract: A system and method for determining unknown values of certain motor parameters includes a motor input device connectable to an electric motor having associated therewith values for known motor parameters and an unknown value of at least one motor parameter. The motor input device includes a processing unit that receives a first input from the electric motor comprising values for the known motor parameters for the electric motor and receive a second input comprising motor data on a plurality of reference motors, including values for motor parameters corresponding to the known motor parameters of the electric motor and values for motor parameters corresponding to the at least one unknown motor parameter value of the electric motor. The processor determines the unknown value of the at least one motor parameter from the first input and the second input and determines a motor management strategy for the electric motor based thereon.

Abstract translation: 用于确定某些电动机参数的未知值的系统和方法包括可连接到具有与已知电动机参数的值相关联的电动机的电动机输入装置和至少一个电动机参数的未知值。 电动机输入装置包括处理单元，其接收来自电动机的第一输入，包括用于电动机的已知电动机参数的值，并且接收包括多个参考电动机上的电动机数据的第二输入，包括对应于 电动机的已知电动机参数和对应于电动机的至少一个未知电动机参数值的电动机参数值。 处理器从第一输入端和第二输入端确定至少一个电动机参数的未知值，并且基于此确定用于电动机的电动机管理策略。

公开(公告)号：US20130020614A1

公开(公告)日：2013-01-24

申请号：US13557414

申请日：2012-07-25

Applicant: Bin Lu ,  Tomas Palacios

Inventor： Bin Lu ,  Tomas Palacios

IPC: H01L29/778 ,  H01L21/336

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/4236

Abstract: A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the dual-gate normally-off nitride transistor. A second gate structure is formed between the first gate structure and the drain electrode for modulating a normally-on channel region underneath the second gate structure. The magnitude of the threshold voltage of the second gate structure is smaller than the drain breakdown of the first gate structure for proper operation of the dual-gate normally-off nitride transistor.

Abstract translation: 一种双栅极常关氮化物晶体管，其包括形成在源电极和漏电极之间的第一栅极结构，用于控制双栅极正常氮化物晶体管的常关沟道区。 在第一栅极结构和漏极之间形成第二栅极结构，用于调制在第二栅极结构下方的常导通道区域。 第二栅极结构的阈值电压的幅度小于用于双栅极常关氮化物晶体管的正常工作的第一栅极结构的漏极击穿。