摘要:
An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.
摘要:
A terahertz band optical filter having a dielectric multilayer periodic structure in which a plurality of dielectric materials are periodically layered. Multi-cavity layers each having an optical path length of n times λ/2 (n is an integer greater than or equal to 1) and made of a low-refractive index medium are arranged. The cavity layers are coupled using a single-layer coupling layer having an optical path length λ/4 and made of a high-refractive index medium, thus forming a multi-cavity structure. Matching layers each including a high refractive index layer and a low refractive index layer each having an optical path length of λ/4 are disposed at either end of the multi-cavity structure.
摘要:
Novel amine compounds that can be utilized as hole transport materials, hole injection materials or the like of organic electroluminescence devices, electrophotographic receptors or the like, and their production processes are provided.The novel amine compound is represented by the following general formula (1).In the formula, R1 and R2 each independently represents hydrogen atom, a linear, branched or cyclic alkyl group or alkoxy group, an aryl group, an aryloxy group or a halogen atom; Ar1 and Ar2 each independently represents a substituted or unsubstituted aryl group or heteroaryl group, and may form a nitrogen-containing heterocyclic ring together with the nitrogen atom bonded thereto; and Ar3 each independently represents a substituted or unsubstituted phenyl group, naphthyl group, biphenylyl group, terphenylyl group, anthryl group, fluorenyl group or pyridyl group (except for amino-substituted groups); and M represents a single bond, an arylene group or a heteroarylene group.
摘要:
There is provided a buffer circuit that can deal with input and output signals having a large voltage swing. Such a buffer circuit is designed for outputting an output signal corresponding to an input signal. The buffer circuit includes an input/output circuit for maintaining an output impedance at a constant level, and outputting the output signal having an output voltage which is substantially the same as the input voltage of the input signal, the transistors 434 and 424 that are connected to the respective ends of the input/output circuit in series, where the transistors 434 and 424 protect the input/output circuit by reducing power consumption of the input/output circuit in such a manner as to supply voltages that correspond to the input voltage or the output voltage in terms of level, to the respective ends of the input/output circuit, and the control circuit 420 for (i) when the input voltage is smaller than a reference level, supplying a predetermined constant voltage to the transistor 434 as the base voltage, and (ii) when the input voltage is equal to or larger than the reference level, supplying a voltage that is obtained by decreasing the input voltage by a predetermined voltage to the transistor 434 as the base voltage. Here, the decreased voltage is larger than the predetermined constant voltage.
摘要:
To provide a process for preparing an arylamine highly selectively and highly efficiently, which is also industrially superior without a fear of a side reaction when a strong base is employed. An aryl compound having an active group is reacted with an amine compound in the presence of a base by means of a catalyst for producing an arylamine which comprises a palladium compound having a tertiary phosphine group and a phase-transfer catalyst.
摘要:
An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.
摘要:
A test apparatus for testing a device under test is provided. The test apparatus includes a test signal generating section for generating a test signal to be provided to the device under test, a driver circuit for providing the test signal to the device under test and a determination section for determining whether is good or bad of the device under test based on the output signal outputted by the device under test according to the test signal. The driver circuit includes a main driver and a sub-driver for outputting drive signals according to the test signal, respectively, a differentiating circuit for outputting a differentiated signal obtained by differentiating the drive signal outputted by the sub-driver and an adding section for providing a signal having the waveform according to the test signal which is obtained by adding the differentiated signal to the drive signal outputted by the main driver to the device under test.
摘要:
The present invention provides a server apparatus, comprising: storage means for storing a plurality of candidate data including candidate location data and a plurality of attribute data; reception means for receiving search scope indication data, scheduled time data, and present location data, the search scope indication data; extraction means for extracting one attribute data from a plurality of attribute data; calculation means for calculating an expected time of reaching the candidate location on the basis of the present location data and candidate location data corresponding to the extracted attribute data; determination means for determining whether arrival at the candidate location by the expected time is possible, on the basis of the expected time and the scheduled time data; and transmission means for transmitting all or part of the candidate data including the extracted attribute data in a case that the result of the determination by the determination means is negative.
摘要:
When a nitride semiconductor monocrystalline wafer is polished, a process-transformed layer is produced. Etching is required in order to remove the process-transformed layer. Being that nitride semiconductor materials are chemically inert, however, suitable etching does not exist. Although potassium hydroxide, for example, or sulfuric acid have been proposed as GaN etchants, their corrosively remove material from the Ga face is weak. Dry etching utilizing a halogen plasma is carried out in order to remove the process-transformed layer. The Ga face can be etched off with the halogen plasma. Nevertheless, owing to the dry etching, a problem arises again-surface contamination due to metal particles. To address the problem, wet etching with, as the etchant, solutions such as HF+H2O2, H2SO4+H2O2, HCl+H2O2, or HNO3, which have no selectivity, have etching ability, and have an oxidation-reduction potential of 1.2 V or more, is performed.
摘要翻译:当氮化物半导体单晶晶片被抛光时,产生工艺变换层。 为了去除过程变换层,需要进行蚀刻。 由于该氮化物半导体材料是化学惰性的,所以不存在合适的蚀刻。 虽然已经提出了例如氢氧化钾或硫酸作为GaN蚀刻剂,但它们腐蚀性地从Ga表面去除材料是弱的。 进行使用卤素等离子体的干法蚀刻以去除工艺转变层。 Ga面可以用卤素等离子体蚀刻掉。 然而,由于干蚀刻,再次出现了由金属颗粒引起的表面污染。 为了解决这个问题,用作为蚀刻剂的溶液如HF + H 2 O 2,H 2 SO 2, 4 + H 2 O 2,HCl + H 2 O 2,或HNO
摘要:
A driver circuit for outputting an output signal corresponding to an input signal given to the driver circuit, includes a voltage generating unit for outputting a basic output voltage corresponding to the input signal, a first buffer circuit for outputting an output voltage corresponding to the basic output voltage outputted by the voltage generating unit, a second buffer circuit, of which power consumption is larger than the first buffer circuit, for generating and outputting a voltage corresponding to the output voltage as the output signal, a simulating circuit including a simulating buffer circuit for generating a simulated voltage corresponding to the basic output voltage outputted by the voltage generating unit, the simulating buffer circuit having substantially the same characteristic as that of the first buffer circuit, and a controlling unit for controlling the basic output voltage outputted by the voltage generating unit based on the simulated voltage.