Method of producing III-nitride substrate
    131.
    发明申请
    Method of producing III-nitride substrate 审中-公开
    生产III族氮化物衬底的方法

    公开(公告)号:US20080277667A1

    公开(公告)日:2008-11-13

    申请号:US12219249

    申请日:2008-07-18

    申请人: Naoki Matsumoto

    发明人: Naoki Matsumoto

    IPC分类号: H01L29/20

    摘要: An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.

    摘要翻译: 使用由线22构成的线阵列21切割六方晶III族氮化物晶体的锭3。 在这种情况下,锭子3被切割成使得锭3在供给磨料流体的同时被切割,同时沿与线22的延伸方向B垂直的方向供给锭3和线22中的至少一个 。 在切割锭3期间,线22的延伸方向B相对于锭3的{1-100}面倾斜3°以上。

    Terahertz-Band Optical Filter, Designing Method Thereof, and Manufacturing Method Thereof
    132.
    发明申请
    Terahertz-Band Optical Filter, Designing Method Thereof, and Manufacturing Method Thereof 有权
    太赫兹波段光滤波器及其设计方法及其制造方法

    公开(公告)号:US20080252979A1

    公开(公告)日:2008-10-16

    申请号:US12146717

    申请日:2008-06-26

    申请人: Naoki Matsumoto

    发明人: Naoki Matsumoto

    IPC分类号: G02B5/28 B05D5/06

    CPC分类号: G02B5/204

    摘要: A terahertz band optical filter having a dielectric multilayer periodic structure in which a plurality of dielectric materials are periodically layered. Multi-cavity layers each having an optical path length of n times λ/2 (n is an integer greater than or equal to 1) and made of a low-refractive index medium are arranged. The cavity layers are coupled using a single-layer coupling layer having an optical path length λ/4 and made of a high-refractive index medium, thus forming a multi-cavity structure. Matching layers each including a high refractive index layer and a low refractive index layer each having an optical path length of λ/4 are disposed at either end of the multi-cavity structure.

    摘要翻译: 一种具有电介质多层周期性结构的太赫波带滤光器,其中多个电介质材料周期性地分层。 布置具有n倍λ/ 2(n是大于或等于1的整数)并且由低折射率介质制成的光程长度的多腔层。 使用具有光路长度λ/ 4并由高折射率介质制成的单层耦合层耦合腔层,从而形成多腔结构。 在多腔结构的任一端设置各自包括高折射率层和低折射率层的匹配层,每层具有λ/ 4的光程。

    Amine Compound Having Fluorene Group as Framework, Process for Producing the Amine Compound, and Use of the Amine Compound
    133.
    发明申请
    Amine Compound Having Fluorene Group as Framework, Process for Producing the Amine Compound, and Use of the Amine Compound 有权
    具有芴基作为骨架的胺化合物,生产胺化合物的方法和胺化合物的用途

    公开(公告)号:US20080194878A1

    公开(公告)日:2008-08-14

    申请号:US10585945

    申请日:2005-01-14

    IPC分类号: C07C211/44

    摘要: Novel amine compounds that can be utilized as hole transport materials, hole injection materials or the like of organic electroluminescence devices, electrophotographic receptors or the like, and their production processes are provided.The novel amine compound is represented by the following general formula (1).In the formula, R1 and R2 each independently represents hydrogen atom, a linear, branched or cyclic alkyl group or alkoxy group, an aryl group, an aryloxy group or a halogen atom; Ar1 and Ar2 each independently represents a substituted or unsubstituted aryl group or heteroaryl group, and may form a nitrogen-containing heterocyclic ring together with the nitrogen atom bonded thereto; and Ar3 each independently represents a substituted or unsubstituted phenyl group, naphthyl group, biphenylyl group, terphenylyl group, anthryl group, fluorenyl group or pyridyl group (except for amino-substituted groups); and M represents a single bond, an arylene group or a heteroarylene group.

    摘要翻译: 提供了可用作有机电致发光器件,电子照相感应器等的空穴传输材料,空穴注入材料等的新型胺化合物及其制备方法。 该新型胺化合物由以下通式(1)表示。 在该式中,R 1和R 2各自独立地表示氢原子,直链,支链或环状的烷基或烷氧基,芳基,芳氧基或 卤素原子; Ar 1和Ar 2各自独立地表示取代或未取代的芳基或杂芳基,并可与其键合的氮原子一起形成含氮杂环; 和Ar 3各自独立地表示取代或未取代的苯基,萘基,联苯基,三联苯基,蒽基,芴基或吡啶基(氨基取代基除外)。 M表示单键,亚芳基或亚杂亚芳基。

    Buffer circuit, driver circuit, and semiconductor testing apparatus
    134.
    发明授权
    Buffer circuit, driver circuit, and semiconductor testing apparatus 失效
    缓冲电路,驱动电路和半导体测试装置

    公开(公告)号:US07355432B2

    公开(公告)日:2008-04-08

    申请号:US11447666

    申请日:2006-06-06

    申请人: Naoki Matsumoto

    发明人: Naoki Matsumoto

    IPC分类号: G01R31/26 G01R31/28 H03B1/00

    CPC分类号: G01R31/31924 G01R31/31713

    摘要: There is provided a buffer circuit that can deal with input and output signals having a large voltage swing. Such a buffer circuit is designed for outputting an output signal corresponding to an input signal. The buffer circuit includes an input/output circuit for maintaining an output impedance at a constant level, and outputting the output signal having an output voltage which is substantially the same as the input voltage of the input signal, the transistors 434 and 424 that are connected to the respective ends of the input/output circuit in series, where the transistors 434 and 424 protect the input/output circuit by reducing power consumption of the input/output circuit in such a manner as to supply voltages that correspond to the input voltage or the output voltage in terms of level, to the respective ends of the input/output circuit, and the control circuit 420 for (i) when the input voltage is smaller than a reference level, supplying a predetermined constant voltage to the transistor 434 as the base voltage, and (ii) when the input voltage is equal to or larger than the reference level, supplying a voltage that is obtained by decreasing the input voltage by a predetermined voltage to the transistor 434 as the base voltage. Here, the decreased voltage is larger than the predetermined constant voltage.

    摘要翻译: 提供了可以处理具有大电压摆幅的输入和输出信号的缓冲电路。 这种缓冲电路被设计为输出对应于输入信号的输出信号。 缓冲电路包括用于将输出阻抗保持在恒定电平的输入/输出电路,并且输出具有与输入信号的输入电压基本相同的输出电压的输出信号,所连接的晶体管434和424 到串联的输入/输出电路的各个端部,其中晶体管434和424通过降低输入/输出电路的功耗来保护输入/输出电路,以便提供对应于输入电压的电压或 电平的输出电压,输入/输出电路的各个端部以及控制电路420,用于(i)当输入电压小于参考电平时,向晶体管434提供预定的恒定电压作为 基极电压,以及(ii)当输入电压等于或大于参考电平时,将通过将输入电压降低预定电压而获得的电压 到晶体管434作为基极电压。 这里,降低的电压大于预定的恒定电压。

    Method of producing III-nitride substrate
    136.
    发明申请
    Method of producing III-nitride substrate 有权
    生产III族氮化物衬底的方法

    公开(公告)号:US20070105485A1

    公开(公告)日:2007-05-10

    申请号:US11646397

    申请日:2006-12-28

    申请人: Naoki Matsumoto

    发明人: Naoki Matsumoto

    IPC分类号: B24B1/00

    摘要: An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.

    摘要翻译: 使用由线22构成的线阵列21切割六边形III族氮化物晶体的锭3.在这种情况下,锭3被切割,使得锭3在供给时供给研磨液而切片 锭3和线22中的至少一个在与线22的延伸方向B垂直的方向上。在切割锭3期间,线22的延伸方向B相对于{1- 100}平面3。

    Driver circuit, test apparatus and adjusting method
    137.
    发明申请
    Driver circuit, test apparatus and adjusting method 有权
    驱动电路,测试仪器及调整方法

    公开(公告)号:US20070103198A1

    公开(公告)日:2007-05-10

    申请号:US11262507

    申请日:2005-10-28

    IPC分类号: H03K19/0175

    CPC分类号: G01R31/31928 G01R31/31924

    摘要: A test apparatus for testing a device under test is provided. The test apparatus includes a test signal generating section for generating a test signal to be provided to the device under test, a driver circuit for providing the test signal to the device under test and a determination section for determining whether is good or bad of the device under test based on the output signal outputted by the device under test according to the test signal. The driver circuit includes a main driver and a sub-driver for outputting drive signals according to the test signal, respectively, a differentiating circuit for outputting a differentiated signal obtained by differentiating the drive signal outputted by the sub-driver and an adding section for providing a signal having the waveform according to the test signal which is obtained by adding the differentiated signal to the drive signal outputted by the main driver to the device under test.

    摘要翻译: 提供了一种用于测试被测设备的测试设备。 测试装置包括:测试信号产生部分,用于产生要提供给被测设备的测试信号;驱动器电路,用于将测试信号提供给被测器件;以及确定部分,用于确定器件的良好或坏 根据被测设备根据测试信号输出的输出信号进行测试。 驱动器电路包括主驱动器和副驱动器,用于分别根据测试信号输出驱动信号;差分电路,用于输出通过对由子驱动器输出的驱动信号进行微分而获得的微分信号;以及加法部分,用于提供 具有根据测试信号的波形的信号,该信号通过将微分信号与由主驱动器输出的驱动信号相加到被测器件而获得。

    Server apparatus, terminal device, and information providing system
    138.
    发明授权
    Server apparatus, terminal device, and information providing system 有权
    服务器设备,终端设备和信息提供系统

    公开(公告)号:US07209827B2

    公开(公告)日:2007-04-24

    申请号:US10795127

    申请日:2004-03-05

    IPC分类号: G01C21/26 G06F17/30 G06F15/16

    CPC分类号: G01C21/3679 G06Q10/047

    摘要: The present invention provides a server apparatus, comprising: storage means for storing a plurality of candidate data including candidate location data and a plurality of attribute data; reception means for receiving search scope indication data, scheduled time data, and present location data, the search scope indication data; extraction means for extracting one attribute data from a plurality of attribute data; calculation means for calculating an expected time of reaching the candidate location on the basis of the present location data and candidate location data corresponding to the extracted attribute data; determination means for determining whether arrival at the candidate location by the expected time is possible, on the basis of the expected time and the scheduled time data; and transmission means for transmitting all or part of the candidate data including the extracted attribute data in a case that the result of the determination by the determination means is negative.

    摘要翻译: 本发明提供一种服务器装置,包括:存储装置,用于存储包括候选位置数据和多个属性数据的多个候选数据; 接收装置,用于接收搜索范围指示数据,预定时间数据和当前位置数据,搜索范围指示数据; 提取装置,用于从多个属性数据中提取一个属性数据; 计算装置,用于根据与所提取的属性数据相对应的当前位置数据和候选位置数据计算到达候选位置的期望时间; 确定装置,用于基于预期时间和预定时间数据确定是否可能到达候选位置预期时间; 以及发送装置,用于在所述确定装置的确定结果为否定的情况下发送包括所提取的属性数据的候选数据的全部或部分。

    Gallium nitride semiconductor substrate and process for producing the same
    139.
    发明申请
    Gallium nitride semiconductor substrate and process for producing the same 审中-公开
    氮化镓半导体基板及其制造方法

    公开(公告)号:US20070018284A1

    公开(公告)日:2007-01-25

    申请号:US10595523

    申请日:2004-08-06

    IPC分类号: H01L29/12 B08B7/00 H01L21/461

    CPC分类号: H01L21/02019 H01L21/30612

    摘要: When a nitride semiconductor monocrystalline wafer is polished, a process-transformed layer is produced. Etching is required in order to remove the process-transformed layer. Being that nitride semiconductor materials are chemically inert, however, suitable etching does not exist. Although potassium hydroxide, for example, or sulfuric acid have been proposed as GaN etchants, their corrosively remove material from the Ga face is weak. Dry etching utilizing a halogen plasma is carried out in order to remove the process-transformed layer. The Ga face can be etched off with the halogen plasma. Nevertheless, owing to the dry etching, a problem arises again-surface contamination due to metal particles. To address the problem, wet etching with, as the etchant, solutions such as HF+H2O2, H2SO4+H2O2, HCl+H2O2, or HNO3, which have no selectivity, have etching ability, and have an oxidation-reduction potential of 1.2 V or more, is performed.

    摘要翻译: 当氮化物半导体单晶晶片被抛光时,产生工艺变换层。 为了去除过程变换层,需要进行蚀刻。 由于该氮化物半导体材料是化学惰性的,所以不存在合适的蚀刻。 虽然已经提出了例如氢氧化钾或硫酸作为GaN蚀刻剂,但它们腐蚀性地从Ga表面去除材料是弱的。 进行使用卤素等离子体的干法蚀刻以去除工艺转变层。 Ga面可以用卤素等离子体蚀刻掉。 然而,由于干蚀刻,再次出现了由金属颗粒引起的表面污染。 为了解决这个问题,用作为蚀刻剂的溶液如HF + H 2 O 2,H 2 SO 2, 4 + H 2 O 2,HCl + H 2 O 2,或HNO

    Driver circuit
    140.
    发明申请
    Driver circuit 失效
    驱动电路

    公开(公告)号:US20070001717A1

    公开(公告)日:2007-01-04

    申请号:US11495144

    申请日:2006-07-28

    IPC分类号: H03B1/00

    摘要: A driver circuit for outputting an output signal corresponding to an input signal given to the driver circuit, includes a voltage generating unit for outputting a basic output voltage corresponding to the input signal, a first buffer circuit for outputting an output voltage corresponding to the basic output voltage outputted by the voltage generating unit, a second buffer circuit, of which power consumption is larger than the first buffer circuit, for generating and outputting a voltage corresponding to the output voltage as the output signal, a simulating circuit including a simulating buffer circuit for generating a simulated voltage corresponding to the basic output voltage outputted by the voltage generating unit, the simulating buffer circuit having substantially the same characteristic as that of the first buffer circuit, and a controlling unit for controlling the basic output voltage outputted by the voltage generating unit based on the simulated voltage.

    摘要翻译: 用于输出与给予驱动电路的输入信号对应的输出信号的驱动电路包括用于输出对应于输入信号的基本输出电压的电压产生单元,用于输出与基本输出对应的输出电压的第一缓冲电路 由电压产生单元输出的电压,第二缓冲电路,其功耗大于第一缓冲电路,用于产生和输出与输出电压相对应的电压作为输出信号;模拟电路,包括模拟缓冲电路, 产生与电压产生单元输出的基本输出电压对应的模拟电压,模拟缓冲电路具有与第一缓冲电路基本相同的特性;以及控制单元,用于控制由电压产生单元输出的基本输出电压 基于模拟电压。