公开(公告)号：US20220359691A1

公开(公告)日：2022-11-10

申请号：US17866822

申请日：2022-07-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yukinori SHIMA ,  Kenichi OKAZAKI

IPC: H01L29/423 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.

公开(公告)号：US20220278236A1

公开(公告)日：2022-09-01

申请号：US17744812

申请日：2022-05-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device having favorable characteristics is provided. A semiconductor device having stable electrical characteristics is provided. An island-shaped insulating layer containing an oxide is provided in contact with a bottom surface of a semiconductor layer containing a metal oxide that exhibits semiconductor characteristics. The insulating layer containing an oxide is provided in contact with a portion of the semiconductor layer to be a channel formation region and is not provided under portions to be low-resistance regions.

公开(公告)号：US20210343754A1

公开(公告)日：2021-11-04

申请号：US17370075

申请日：2021-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

公开(公告)号：US20210313471A1

公开(公告)日：2021-10-07

申请号：US17242562

申请日：2021-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The transistor includes a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second insulating film. The second insulating film includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor film and has a region thinner than the oxide semiconductor film.

公开(公告)号：US20210278922A1

公开(公告)日：2021-09-09

申请号：US17316768

申请日：2021-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/041 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  H01L29/66 ,  G06F3/044

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US20210119056A1

公开(公告)日：2021-04-22

申请号：US17114765

申请日：2020-12-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/417 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/4757 ,  H01L29/423

Abstract: The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

公开(公告)号：US20210035816A1

公开(公告)日：2021-02-04

申请号：US17064730

申请日：2020-10-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20200225785A1

公开(公告)日：2020-07-16

申请号：US16830795

申请日：2020-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Masami JINTYOU ,  Yasuharu HOSAKA ,  Naoto GOTO ,  Takahiro IGUCHI ,  Daisuke KUROSAKI ,  Junichi KOEZUKA

IPC: G06F3/044 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/32 ,  G06F3/041 ,  H01L29/66

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US20200211425A1

公开(公告)日：2020-07-02

申请号：US16634955

申请日：2018-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yukinori SHIMA ,  Masami JINTYOU

IPC: G09F9/30 ,  H01L51/50

Abstract: A semiconductor device that can be highly integrated is provided.The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, and a first conductive layer. The third insulating layer is positioned over the semiconductor layer and includes a first opening over the semiconductor layer. The first conductive layer is positioned over the semiconductor layer, the first insulating layer is positioned between the first conductive layer and the semiconductor layer, and the second insulating layer is provided in a position that is in contact with a side surface of the first opening, the semiconductor layer, and the first insulating layer. The semiconductor layer includes a first portion overlapping with the first insulating layer, a pair of second portions between which the first portion is sandwiched and which overlap with the second insulating layer, and a pair of third portions between which the first portion and the pair of second portions are sandwiched and which overlap with neither the first insulating layer nor the second insulating layer. The first portion has a smaller width than the first opening and has a thinner shape of the semiconductor layer than the second portions, and the second portions have a thinner shape of the semiconductor layer than the third portions.

公开(公告)号：US20200161435A1

公开(公告)日：2020-05-21

申请号：US16739647

申请日：2020-01-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu OBONAI ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takashi HAMOCHI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/24 ,  H01L29/786 ,  C04B35/622 ,  C04B35/453 ,  H01L27/12 ,  H01L29/778 ,  C23C14/58 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.