公开(公告)号：US08047695B2

公开(公告)日：2011-11-01

申请号：US12427483

申请日：2009-04-21

申请人： Takashi Inoue

发明人： Takashi Inoue

IPC分类号： B60Q1/00

CPC分类号： F21V29/677 ,  F21S41/147 ,  F21S45/30 ,  F21S45/43 ,  F21V29/67 ,  F21V29/74 ,  F21V29/80 ,  F21V29/83 ,  F21Y2115/10

摘要： A vehicle lamp is provided. The vehicle lamp includes semiconductor light emitting device, a heatsink configured to dissipate a heat generated by the semiconductor light emitting device, a fan which moves air, a guide portion configured to diffuse the air from the fan and to guide the air toward the heatsink, and a housing in which the semiconductor light emitting device, the heatsink, the fan and the guide portion are accommodated. The heatsink includes a base and a plurality of heat dissipating members arranged to protrude from the base.

摘要翻译： 提供车灯。 车灯包括半导体发光装置，散热由半导体发光装置产生的热量的散热器，移动空气的风扇，被构造成从风扇扩散空气并将空气引向散热器的引导部， 以及容纳半导体发光器件，散热器，风扇和引导部的壳体。 散热器包括基部和布置成从基部突出的多个散热构件。

公开(公告)号：US07985984B2

公开(公告)日：2011-07-26

申请号：US12528578

申请日：2008-02-26

申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Yasuhiro Okamoto ,  Takashi Inoue

发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Yasuhiro Okamoto ,  Takashi Inoue

IPC分类号： H01L29/778

CPC分类号： H01L29/42316 ,  H01L29/2003 ,  H01L29/7781

摘要： Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate (101); an undercoat layer (103) of a first III-nitride semiconductor; and a carrier travel layer (104) of a second III-nitride semiconductor. The undercoat layer (103) (101) and the carrier travel layer (104) is formed on the substrate in this order. The field effect transistor includes source/drain electrodes (105, 106) in ohmic contact, and a gate electrode (107) in Schottky contact directly or via another layer on the carrier travel layer (104). The undercoat layer (103) has an average lattice constant greater than that of the carrier travel layer (104) and a band gap greater than that of the carrier travel layer (104).

摘要翻译： 提供了能够降低接触电阻，具有小的电流崩溃的半导体器件，并且可以在高频操作时提高夹断特性。 使用纤锌矿（具有（0001）作为主面）的III型氮化物半导体的场效应晶体管包括：衬底（101）; 第一III族氮化物半导体的底涂层（103） 和第二III族氮化物半导体的载流子行进层（104）。 底涂层（103）（101）和载体移动层（104）依次形成在基板上。 场效应晶体管包括欧姆接触的源极/漏极（105,106）和直接或通过载流子行进层（104）上的另一层的肖特基接触的栅电极（107）。 底涂层（103）的平均晶格常数大于载体移动层（104）的平均晶格常数，并且带隙大于载流子行进层（104）的平均晶格常数。

公开(公告)号：US07982938B2

公开(公告)日：2011-07-19

申请号：US12680783

申请日：2008-06-26

申请人： Taro Ando ,  Yoshiyuki Ohtake ,  Takashi Inoue ,  Naoya Matsumoto ,  Haruyoshi Toyoda

发明人： Taro Ando ,  Yoshiyuki Ohtake ,  Takashi Inoue ,  Naoya Matsumoto ,  Haruyoshi Toyoda

IPC分类号： G02B26/00 ,  G02B26/02

CPC分类号： G02B5/005 ,  G02B27/0988

摘要： This optical mask is an optical mask which applies spatial intensity modulation to input light in a beam cross-section and outputs a light after being subjected to the modulation, and when regions A0 to Ap defined by circumferences with p radiuses r1 to rp (p is an even number, rp>rp−1> . . . >r2>r1, and rp−rp−1>rp−1−rp−2> . . . >r3−r2>r2−r1>r1) around a predetermined position are set in order from an inner side, a region Am (m is an even number not less than 0 and not more than p) is a light transmission region, and a region An (n is an odd number not less than 0 and not more than p) is a light shielding region.

摘要翻译： 该光学掩模是对光束横截面中的输入光进行空间强度调制的光学掩模，并且在进行调制之后输出光，并且当由p半径r1至rp（p为p）定义的周期的区域A0至Ap rp-rp-1> r2-r1-r1-r1-r1-r1-r1-r1-r1-r1-r1-r1-r1-r1 位置从内侧依次设置，区域Am（m是不小于0且不大于p的偶数）是透光区域，区域An（n是不小于0的奇数和 不大于p）是遮光区域。

公开(公告)号：US20110136234A1

公开(公告)日：2011-06-09

申请号：US13020193

申请日：2011-02-03

申请人： Shin OHYA ,  Takashi Inoue ,  Takatoki Yamamoto ,  Teruo Fujii ,  Yasuyuki Sakai ,  Masaki Nishikawa ,  Hitomi Sakai ,  Hirosuke Naruto

发明人： Shin OHYA ,  Takashi Inoue ,  Takatoki Yamamoto ,  Teruo Fujii ,  Yasuyuki Sakai ,  Masaki Nishikawa ,  Hitomi Sakai ,  Hirosuke Naruto

IPC分类号： C12N5/07 ,  C12N5/0735

CPC分类号： C12N5/0068 ,  C08G2261/3424 ,  C08L65/04 ,  C12N2533/30

摘要： A cell culture substrate which is durable and which can be readily produced in commercial scale at a low cost, and its production method are provided. The cell culture substrate comprises a substrate and a layer formed by surface modification, which comprises a polymer containing amino group produced by reacting a polymer represented by the following formula (II): (wherein n is 0 or a positive integer, and m is a positive integer, the n and m representing degree of polymerization) formed by chemical vapor deposition of formyl[2.2]paracyclophane represented by the following formula (I): (wherein k is 0 or 1) with a polymer having at least one amino group (—NH2) capable of forming Schiff base in its monomer. The production method of the cell culture substrate comprises the step of synthesizing such polymer on the substrate.

摘要翻译： 提供耐久性且能够以低成本容易地以商业规模生产的细胞培养基材及其制造方法。 细胞培养基材包括基材和通过表面改性形成的层，其包含通过使由下式（II）表示的聚合物反应而生成的含氨基的聚合物：（其中n为0或正整数，m为 正整数，代表聚合度的n和m）通过化学气相沉积由下式（I）表示的甲酰基[2.2]对环烷烃形成：（其中k为0或1）与具有至少一个氨基的聚合物 -NH2）能够在其单体中形成席夫碱。 细胞培养基质的制造方法包括在基材上合成这样的聚合物的工序。

公开(公告)号：US20110058579A1

公开(公告)日：2011-03-10

申请号：US12991271

申请日：2009-05-21

申请人： Yoshiyuki Ohtake ,  Haruyasu Ito ,  Taro Ando ,  Takashi Inoue ,  Naoya Matsumoto ,  Norihiro Fukuchi

发明人： Yoshiyuki Ohtake ,  Haruyasu Ito ,  Taro Ando ,  Takashi Inoue ,  Naoya Matsumoto ,  Norihiro Fukuchi

IPC分类号： H01S3/139

CPC分类号： H01S3/08045 ,  H01S3/0805 ,  H01S3/08059 ,  H01S3/08068 ,  H01S3/105 ,  H01S2301/203

摘要： A laser light source 1 is provided with an output mirror 11, a laser medium 12, a light beam diameter adjuster 13, an aperture 14, a reflection mirror 15, a drive unit 21, and a control unit 22, and outputs laser oscillation light 31 from the output mirror 11 to the outside. The laser resonator is configured so that the reflection mirror 15 and the output mirror 11 are disposed so as to be opposed to each other with the laser medium 12 placed therebetween. The reflection mirror 15 is configured such that it gives amplitude or phase variations to respective positions in the section of a light beam when the light is reflected, and the reflection mirror presents a amplitude or phase variation distribution in accordance with control from the outside, and determines the transverse mode of the laser oscillation light 31 based on the amplitude or phase variation distribution. Thus, a laser light source capable of easily controlling the transverse mode of the laser oscillation light can be realized.

摘要翻译： 激光光源1设置有输出镜11，激光介质12，光束直径调节器13，孔14，反射镜15，驱动单元21和控制单元22，并且输出激光振荡光 31从输出镜11到外部。 激光谐振器被配置为使得反射镜15和输出反射镜11被布置成使激光介质12放置在它们之间彼此相对。 反射镜15被构造成使得当光被反射时，其在光束的部分中的相应位置产生振幅或相位变化，并且反射镜根据来自外部的控制呈现幅度或相位变化分布，以及 基于振幅或相位变化分布确定激光振荡光31的横向模式。 因此，可以实现能够容易地控制激光振荡光的横向模式的激光源。

公开(公告)号：US20110001251A1

公开(公告)日：2011-01-06

申请号：US12667398

申请日：2008-07-03

申请人： Yutaka Gou ,  Kazuhiro Miyauchi ,  Takashi Inoue ,  Atsushi Takahara ,  Hiroshi Jinnai

发明人： Yutaka Gou ,  Kazuhiro Miyauchi ,  Takashi Inoue ,  Atsushi Takahara ,  Hiroshi Jinnai

IPC分类号： H01L23/52 ,  H01L21/60 ,  C09J163/00 ,  B32B37/12

CPC分类号： C09J163/00 ,  C08F2220/325 ,  C08G59/3209 ,  C08G59/5006 ,  C08G59/5033 ,  C08L33/068 ,  C08L63/00 ,  C08L2205/22 ,  C08L2312/00 ,  C08L2666/02 ,  C08L2666/04 ,  C08L2666/22 ,  C09J133/06 ,  C09J133/068 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Disclosed is an adhesive composition, comprising, as essential components, a thermosetting resin component A and a high-molecular component B which are evenly compatible and miscible with each other at a temperature of 5 to 40° C. without being separated from each other, and a curing agent component C,wherein after the adhesive composition comes into contact with an adherend and after the thermosetting resin component A is cured, the thermosetting resin component A is separated, in the adhesive composition, into particulate structures wherein the concentration of the thermosetting resin component A is larger than that in the surrounding of the particulate structures, and further the particulate structures are formed in a larger amount near a surface of the composition which contacts the adherend than inside the adhesive composition. The adhesive composition can be used in thin-film bonding. it is possible to provide an adhesive composition excellent in heat resistance, crack resistance, adhesive property, and exudation resistance, which is property that the adhesive less exudes.

摘要翻译： 公开了一种粘合剂组合物，其包含作为必要组分的热固性树脂组分A和高分子组分B，其在5至40℃的温度下彼此均匀地相容并且可混溶，而不彼此分离， 和固化剂成分C，其中在粘合剂组合物与被粘物接触之后，并且在热固性树脂组分A固化之后，将热固性树脂组分A在粘合剂组合物中分离成颗粒结构，其中热固性 树脂组分A大于颗粒结构周围的树脂组分A，并且在粘合剂组合物内比接触被粘物的组合物的表面附近还形成更多的颗粒结构。 粘合剂组合物可用于薄膜粘合。 可以提供耐热性，抗裂纹性，粘合性和耐渗出性优异的粘合剂组合物，这是粘合剂较少渗出的特性。

公开(公告)号：US07859014B2

公开(公告)日：2010-12-28

申请号：US11571290

申请日：2005-06-24

申请人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

发明人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/78

摘要： The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.

摘要翻译： 本发明提供一种能够抑制电流塌陷以及防止电介质击穿电压和增益降低的半导体器件，从而进行高压操作并实现理想的高输出。 在基板（101）上形成有由第一GaN基半导体构成的缓冲层（102），由第二GaN基半导体构成的载流子移动层（103）和由 第三GaN基半导体。 通过消除第一绝缘膜（107）的一部分和载体供给层（104）的一部分来制造凹陷结构（108）。 接下来，沉积栅极绝缘膜（109），然后形成栅极电极（110），以填充凹部（108）并覆盖在第一绝缘膜（107）保留的区域上，使得 其漏电极侧的部分比源电极侧的部分长。 采用这样的凹部结构来提供能够执行高电压操作的高输出半导体器件。

公开(公告)号：US20100253726A1

公开(公告)日：2010-10-07

申请号：US12819608

申请日：2010-06-21

申请人： Yusuke Imahashi ,  Takashi Inoue

发明人： Yusuke Imahashi ,  Takashi Inoue

IPC分类号： B41J29/38

CPC分类号： B41J2/04588 ,  B41J2/04558 ,  B41J2/04573 ,  B41J2/0458

摘要： An object of this invention is to decrease the amount of ink mist while keeping the image quality high in inkjet printing. To achieve this object, printing is performed by time-divisionally driving, for each block, a plurality of nozzles for discharging ink. In preliminary discharge, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the first time interval. In printing, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the second time interval longer than the first time interval.

摘要翻译： 本发明的目的是在喷墨打印中保持图像质量高的同时减少墨雾量。 为了实现该目的，通过对于每个块分时驱动执行用于排出墨的多个喷嘴来进行打印。 在预喷射中，喷嘴被驱动以将相邻喷嘴之间的驱动时间间隔设定为第一时间间隔。 在打印中，喷嘴被驱动以将相邻喷嘴之间的驱动时间间隔设定为比第一时间间隔更长的第二时间间隔。

公开(公告)号：US07800131B2

公开(公告)日：2010-09-21

申请号：US11921857

申请日：2006-06-12

申请人： Hironobu Miyamoto ,  Yuji Ando ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Akio Wakejima ,  Kensuke Kasahara ,  Yasuhiro Murase ,  Kohji Matsunaga ,  Katsumi Yamanoguchi ,  Hidenori Shimawaki

发明人： Hironobu Miyamoto ,  Yuji Ando ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota ,  Akio Wakejima ,  Kensuke Kasahara ,  Yasuhiro Murase ,  Kohji Matsunaga ,  Katsumi Yamanoguchi ,  Hidenori Shimawaki

IPC分类号： H01L29/812 ,  H01L21/338

CPC分类号： H01L29/404 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/802 ,  H01L29/812

摘要： A field effect transistor includes a layer structure made of compound semiconductor (111) provided on a semiconductor substrate (110) made of GaAs or InP, as an operation layer, and employs a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When, in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region, in which the second field plate electrode overlaps the upper part of a structure composed of the first field plate electrode and a gate electrode (113), is designated as Lol, and the gate length is Lg, the relation expressed as 0≦Lol/Lg≦1 holds.

摘要翻译： 场效应晶体管包括由设置在由GaAs或InP制成的半导体衬底（110）上的化合物半导体（111）作为操作层的层结构，并且采用第一场极板电极（116）和第二场极板电极 （118）。 第二场板电极包括位于第一场极板电极和漏电极（114）之间的区域中的屏蔽部分（119），用于屏蔽第一场极板电极与漏极电极。 当在栅极长度方向的截面图中，重叠区域的栅极长度方向上的长度，其中第二场极板电极与由第一场极板电极和栅电极构成的结构的上部重叠 （113）表示为Lol，栅极长度为Lg，表示为0＆nlE; Lol / Lg＆nlE; 1的关系成立。

公开(公告)号：US20100219718A1

公开(公告)日：2010-09-02

申请号：US12680774

申请日：2008-10-21

申请人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

发明人： Kazunori Nishimura ,  Hiroyuki Nakamura ,  Hidekazu Nakanishi ,  Ryouichi Takayama ,  Takashi Inoue

IPC分类号： H01L41/09 ,  H01L41/04

CPC分类号： H03H9/0222 ,  H03H9/02574

摘要： A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient.

摘要翻译： 弹性边界波装置包括由压电材料制成的第一介质层，设置在第一介质层上的第二介质层，设置在第二介质层上的第三介质层，以及设置在第二介质和第三介质之间的界面处的电极 层。 电极驱动第三介质层产生横波。 第三介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 第二介质层中的横波的传播速度低于第一介质层中的横波的传播速度。 该声界面波装置具有大的机电耦合系数。