公开(公告)号：US07856156B2

公开(公告)日：2010-12-21

申请号：US12196936

申请日：2008-08-22

Applicant: Keyvan Sayyah ,  Robert R. Hayes

Inventor： Keyvan Sayyah ,  Robert R. Hayes

IPC: G02F1/035 ,  G02F1/01 ,  G02F1/03 ,  G02F1/07

CPC classification number: G02F1/0316 ,  G02F1/2255 ,  G02F2201/07 ,  G02F2202/10 ,  G02F2203/21

Abstract: There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift.

Abstract translation: 在本公开的一个实施例中提供了一种用于减轻DC偏置漂移的铌酸锂调制器结构，其包括在具有一个或多个DC部分和RF部分的光波导上图案化的高掺杂半导体层，其中金属层或接触是 与半导体层的一部分接触，并且缓冲层沉积在RF部分中。 在本公开的另一实施例中提供了一种制造用于减轻直流偏置漂移的铌酸锂电光调制器的方法。

公开(公告)号：US20100310206A1

公开(公告)日：2010-12-09

申请号：US12863126

申请日：2008-01-18

Applicant: Kenji Kawano ,  Seiji Uchida ,  Eiji Kawazura ,  Yuji Sato ,  Masaya Nanami ,  Toru Nakahira ,  Nobuhiro Igarashi ,  Satoshi Matsumoto

Inventor： Kenji Kawano ,  Seiji Uchida ,  Eiji Kawazura ,  Yuji Sato ,  Masaya Nanami ,  Toru Nakahira ,  Nobuhiro Igarashi ,  Satoshi Matsumoto

IPC: G02F1/035

CPC classification number: G02F1/0356 ,  G02F2201/063 ,  G02F2201/07

Abstract: A technical problem related to a traveling wave electrode type of optical modulator comprising a substrate having the electro-optical effect, optical waveguides formed in the substrate, and a traveling wave electrode formed above the substrate includes improvement of the characteristics such as optical modulation bandwidth, driving voltage, and characteristic impedance of the traveling wave electrode type of optical modulator. To solve the problem, the structure of ridge portions is optimized which is formed in such a manner that a part of the substrate at regions where electric field generated by a high frequency electric signal traveling through the traveling wave electrode is strong is reduced in thickness by digging. Further, a buffer layer is formed over the substrate where the ridge portions are formed and a conducting layer is formed over the buffer layer. The thickness of at least one part of the buffer layer along the normal line of a side surface of the ridge portions is less than the thickness of the buffer layer on a bottom surface between the ridge portions formed by digging and/or the thickness of the buffer layer on a top part of the ridge portions.

Abstract translation: 与包括具有电光效应的基板，形成在基板中的光波导和形成在基板上的行波电极的行波电极型光调制器有关的技术问题包括光调制带宽等特性的改进， 驱动电压，以及行波电极型光调制器的特性阻抗。 为了解决这个问题，脊部的结构被优化，其形成为使得在通过行波电极行进的高频电信号产生的电场强的区域中的基板的一部分的厚度通过 挖掘。 此外，在形成有脊部的基板上形成缓冲层，在缓冲层上形成导电层。 沿着脊部的侧面的法线的缓冲层的至少一部分的厚度小于通过挖掘形成的脊部之间的底面上的缓冲层的厚度和/ 在脊部的顶部的缓冲层。

公开(公告)号：US20100296769A1

公开(公告)日：2010-11-25

申请号：US12811565

申请日：2008-12-26

Applicant: Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

Inventor： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F2201/07

Abstract: A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

Abstract translation: 一种半导体光调制器，包括具有芯层，第一覆层，第二覆层和阻挡层的叠层结构的第一半导体光波导，第一覆层和第二覆层设置在第一半导体光波导的下方和上方 所述阻挡层插入在所述第二覆盖层和所述芯层之间; 具有层叠结构的第二半导体光波导，其中所述第二包层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿透n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。

公开(公告)号：US07711214B2

公开(公告)日：2010-05-04

申请号：US11817312

申请日：2006-03-08

Applicant: Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

Inventor： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F2201/07 ,  G02F2202/102

Abstract: There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).

Abstract translation: 提供了一种能够执行稳定操作并且具有优异的电场电压特性的半导体光调制器，同时具有n-i-n结构的半导体光调制器的特性。 半导体光调制器包括通过依次生长n型InP包覆层（11），具有电光效应的半导体芯层（13），p-InAlAs层（15）和 n型InP覆层（16）。 p-InAlAs层（15）的电子亲和力小于n型InP包覆层（16）的电子亲和力。 在具有这种结构的波导结构中，非掺杂InP覆盖层（12）和非掺杂InP覆盖层（14）可以分别设置在n型InP覆盖层（11）和半导体芯层 （13），以及半导体芯层（13）和p-InAlAs层（15）之间。

公开(公告)号：US20100054656A1

公开(公告)日：2010-03-04

申请号：US12198307

申请日：2008-08-26

Applicant: Leslie A. Kolodziejski ,  Gale S. Petrich ,  Orit Shamir

Inventor： Leslie A. Kolodziejski ,  Gale S. Petrich ,  Orit Shamir

IPC: G02F1/295 ,  G02F1/00

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F2201/063 ,  G02F2201/07 ,  G02F2201/50

Abstract: An optical modulator is provided. The optical modulator includes a ridge-shaped active region comprising a plurality of alternating high and low index layers. The ridge-shaped active region is used to confine a selective optical mode for optical modulation. A plurality of oxidized layers positioned so as to confine the selective optical mode in the middle region of the ridge-shaped active region. The oxidized layers enable the optical modulator to withstand high operating voltages both in reverse and forward bias without concern of breakdown or carrier loss.

Abstract translation: 提供了一种光调制器。 该光学调制器包括一个包括多个交替的高和低折射率层的脊状有源区。 脊形有源区域用于限制用于光学调制的选择性光学模式。 多个氧化层被定位成将选择性光学模式限制在脊状有源区的中间区域。 氧化层使得光学调制器能够在反向和正向偏压下承受高工作电压，而不考虑击穿或载波损耗。

公开(公告)号：US20100046878A1

公开(公告)日：2010-02-25

申请号：US12196936

申请日：2008-08-22

Applicant: Keyvan Sayyah ,  Robert R. Hayes

Inventor： Keyvan Sayyah ,  Robert R. Hayes

IPC: G02F1/035 ,  H01L21/02

CPC classification number: G02F1/0316 ,  G02F1/2255 ,  G02F2201/07 ,  G02F2202/10 ,  G02F2203/21

Abstract: There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift.

Abstract translation: 在本公开的一个实施例中提供了一种用于减轻DC偏置漂移的铌酸锂调制器结构，其包括在具有一个或多个DC部分和RF部分的光波导上图案化的高掺杂半导体层，其中金属层或接触是 与半导体层的一部分接触，并且缓冲层沉积在RF部分中。 在本公开的另一实施例中提供了一种制造用于减轻直流偏置漂移的铌酸锂电光调制器的方法。

公开(公告)号：US20100014800A1

公开(公告)日：2010-01-21

申请号：US12569588

申请日：2009-09-29

Applicant: CHRISTOPHER T. DEROSE ,  ROLAND HIMMELHUBER ,  ROBERT A. NORWOOD ,  NASSER N. PEYGHAMBARIAN

Inventor： CHRISTOPHER T. DEROSE ,  ROLAND HIMMELHUBER ,  ROBERT A. NORWOOD ,  NASSER N. PEYGHAMBARIAN

IPC: G02F1/035

CPC classification number: G02F1/065 ,  G02F1/225 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/07

Abstract: A hybrid strip-loaded EO polymer/sol-gel modulator in which the sol-gel core waveguide does not lie below the active EO polymer waveguide increases the higher electric field/optical field overlap factor Γ and reduces inter-electrode separation d thereby lowering the modulator's half-wave drive voltage Vπ, reducing insertion loss and improving extinction. The strip-loaded modulator comprises an EO polymer layer that eliminates optical scattering caused by sidewall roughness due to etching. Light does not encounter rough edges as it transitions to and from the sol-gel and EO polymer waveguides. This reduces insertion loss.

Abstract translation: 溶胶凝胶芯波导不位于活性EO聚合物波导下面的混合带材加载的EO聚合物/溶胶 - 凝胶调节剂增加了较高的电场/光场重叠因子Gamma并且减小了电极间分离d，从而降低了 调制器的半波驱动电压Vpi，减少插入损耗并改善消光。 载带调制器包括EO聚合物层，其消除由于蚀刻导致的侧壁粗糙度引起的光散射。 当光线从溶胶 - 凝胶和EO聚合物波导转移到和离开时，光不会遇到粗糙的边缘。 这减少了插入损耗。

公开(公告)号：US20090073535A1

公开(公告)日：2009-03-19

申请号：US11817703

申请日：2006-03-02

Applicant: Keiko Sekine

Inventor： Keiko Sekine

IPC: G02F1/01 ,  G02F1/13

CPC classification number: G02F1/1337 ,  G02B5/3008 ,  G02B5/3083 ,  G02F2201/07

Abstract: An optical element having an alignment layer for an optical anisotropic body, in which the generation of damages in the alignment layer is effectively prevented by providing an optical element having an alignment layer for an optical anisotropic body, wherein a stress releasing layer is formed as an underlying layer for the alignment layer.

Abstract translation: 具有光学各向异性体取向层的光学元件，通过设置具有光学各向异性体取向层的光学元件，有效地防止了取向层的损伤的产生，其中形成应力释放层为 对准层的下层。

公开(公告)号：US07330631B2

公开(公告)日：2008-02-12

申请号：US11685629

申请日：2007-03-13

Applicant: Louis J. Bintz ,  Raluca Dinu ,  Danliang Jin

Inventor： Louis J. Bintz ,  Raluca Dinu ,  Danliang Jin

IPC: G02B6/00

CPC classification number: G02F1/3558 ,  G02B6/132 ,  G02B6/138 ,  G02B2006/121 ,  G02F1/065 ,  G02F1/365 ,  G02F2201/07 ,  G02F2202/07 ,  G02F2202/38

Abstract: A method including poling an optical waveguide device including an optical waveguide core, an electrode, and an organically modified sol-gel layer.

Abstract translation: 一种包括极化包括光波导芯，电极和有机改性溶胶 - 凝胶层的光波导器件的方法。

公开(公告)号：US20070268422A1

公开(公告)日：2007-11-22

申请号：US11641702

申请日：2006-12-20

Applicant: Moo-Hyoung Song ,  Sung-Jin Hong

Inventor： Moo-Hyoung Song ,  Sung-Jin Hong

IPC: G02F1/136

CPC classification number: G02F1/136286 ,  G02F2201/07 ,  H01L27/124 ,  H01L27/1244

Abstract: An array substrate for a liquid crystal display device, includes: a gate line and a data line on a substrate, the data line crossing the gate line to define a pixel region; an insulating layer between the gate line and the data line; a switching element adjacent to a crossing of the gate line and the data line; a pixel electrode connected to the switching element, the pixel electrode disposed in the pixel region; and a first buffer pattern at a first side of one of the gate line and the date line and overlapped with the other one of the gate line and the date line, the first buffer pattern being disposed at the same layer as the one of the gate line and the date line.

Abstract translation: 一种液晶显示装置的阵列基板，包括：栅极线和基板上的数据线，所述数据线与所述栅极线交叉以限定像素区域; 栅极线与数据线之间的绝缘层; 与栅极线和数据线的交叉点相邻的开关元件; 连接到开关元件的像素电极，设置在像素区域中的像素电极; 以及在栅极线和日期线之一的第一侧的第一缓冲图案，并且与栅极线和日期线中的另一个重叠，第一缓冲图案设置在与栅极线和日期线之一相同的层 行和日期行。