公开(公告)号：US20050159071A1

公开(公告)日：2005-07-21

申请号：US11083778

申请日：2005-03-16

Applicant: Henryk Birecki ,  Vu Binh

Inventor： Henryk Birecki ,  Vu Binh

IPC: H01J1/304 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312 ,  H01J9/04 ,  H01J9/12

CPC classification number: B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

Abstract: The field emission planar electron emitter device is disclosed that has an emitter electrode, an extractor electrode, and a planar emitter emission layer, electrically coupled to the emitter electrode and the extractor electrode. The planar electron emitter is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. One structural example that provides this biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter that is thicker in depth than at an interior portion of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode and the extractor electrode. The electric field draws emission electrons from the surface of the planar emitter emission layer towards the extractor electrode at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device further includes a focusing electrode electrically coupled to the planar electron emitter.

Abstract translation: 公开了具有电耦合到发射极和提取器电极的发射极，提取器电极和平面发射极发射层的场发射平面电子发射器件。 平面电子发射器被配置为优先于其外部区域在发射层的中心区域偏置电子发射。 提供该偏置的一个结构实例通过制造平面发射器发射层来实现，使得其具有比在平面发射极发射层的内部部分更深的深度的外周边，这减少了在外周边处的电子束发射， 在发射电极和提取电极之间施加电场。 电场在内部部分比在外周边以更高的速率将发射电子从平面发射体发射层的表面吸引到提取器电极。 平面电子发射器件还包括电耦合到平面电子发射器的聚焦电极。

公开(公告)号：US06897604B2

公开(公告)日：2005-05-24

申请号：US10239418

申请日：2001-03-26

Applicant: Nobuyoshi Koshida

Inventor： Nobuyoshi Koshida

IPC: H01J1/308 ,  H01J1/312 ,  H01J31/12 ,  H01J63/06 ,  H01L33/00

CPC classification number: H01J63/06 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/127

Abstract: A method of generating ballistic electrons with a high controllability by applying an electric field to a nano-structure micro-crystal layer or a semi-insulating layer of a semiconductor to generate ballistic electrons or quasiballistic electrons by a multiple-tunnel effect; and a semiconductor device used in this method and provided with a practical material constitution.

Abstract translation: 一种通过向纳米结构微晶层或半导体的半绝缘层施加电场而产生具有高可控性的弹道电子的方法，以通过多隧道效应产生弹道电子或准阻抗电子; 以及在该方法中使用并提供实用材料结构的半导体器件。

公开(公告)号：US06872964B2

公开(公告)日：2005-03-29

申请号：US10644503

申请日：2003-08-20

Applicant: Steven L. Naberhuis ,  Huel-Pel Kuo ,  Si-Ty Lam ,  Henryk Birecki

Inventor： Steven L. Naberhuis ,  Huel-Pel Kuo ,  Si-Ty Lam ,  Henryk Birecki

IPC: G11B9/00 ,  G11B9/10 ,  H01J1/308 ,  H01L29/06

CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1445 ,  H01J1/308

Abstract: The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

Abstract translation: 本公开涉及一种数据存储装置，包括适于发射电子束的多个电子发射器，每个具有平面发射表面的电子发射器和靠近电子发射器的存储介质，所述存储介质具有多个 能够具有表示数据的至少两个不同状态的存储区域，存储区域的状态可响应于由电子发射器发射的电子束的轰击而变化。

公开(公告)号：US06864624B2

公开(公告)日：2005-03-08

申请号：US10697170

申请日：2003-10-30

Applicant: Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

Inventor： Henryk Birecki ,  Vu Thien Binh ,  Si-ty Lam ,  Huei Pei Kuo ,  Steven L. Naberhuis

IPC: G11C11/42 ,  G11B9/00 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01J1/14 ,  H01J1/16 ,  H01L21/76

CPC classification number: B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

Abstract translation: 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

公开(公告)号：US20050040383A1

公开(公告)日：2005-02-24

申请号：US10644503

申请日：2003-08-20

Applicant: Steven Naberhuis ,  Huel-Pel Kuo ,  Si-Ty Lam ,  Henry Birecki

Inventor： Steven Naberhuis ,  Huel-Pel Kuo ,  Si-Ty Lam ,  Henry Birecki

IPC: G11B9/00 ,  G11B9/10 ,  H01J1/308 ,  H01L29/06 ,  H01L21/00

CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1445 ,  H01J1/308

Abstract: The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

Abstract translation: 本公开涉及一种数据存储装置，包括适于发射电子束的多个电子发射器，每个具有平面发射表面的电子发射器和靠近电子发射器的存储介质，所述存储介质具有多个 能够具有表示数据的至少两个不同状态的存储区域，存储区域的状态可响应于由电子发射器发射的电子束的轰击而变化。

公开(公告)号：US20050029920A1

公开(公告)日：2005-02-10

申请号：US10932695

申请日：2004-09-01

Applicant: Henryk Birecki ,  Vu Binh ,  Si-ty Lam ,  Huei Kuo ,  Steven Naberhuis

Inventor： Henryk Birecki ,  Vu Binh ,  Si-ty Lam ,  Huei Kuo ,  Steven Naberhuis

IPC: G11C11/42 ,  G11B9/00 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01K1/04 ,  H01J1/14 ,  H01J19/06 ,  H01L29/76 ,  H01L29/94

CPC classification number: B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

Abstract: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

Abstract translation: 公开了一种场致发射装置，其可以在超高密度存储系统内使用。 发射器件包括发射电极，提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合，使得当在发射电极和提取器电极之间放置电位时，从半导体的暴露表面产生电子的场发射 层。 此外，肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

公开(公告)号：US6046542A

公开(公告)日：2000-04-04

申请号：US904389

申请日：1997-08-01

Applicant: Sembukuttiarachilage R. P. Silva ,  John M. Shannon

Inventor： Sembukuttiarachilage R. P. Silva ,  John M. Shannon

IPC: H01J1/308 ,  H01J29/04 ,  H01J31/12 ,  H01L29/66 ,  H01L29/786 ,  H01J9/12

CPC classification number: H01J1/308 ,  H01J29/04 ,  H01J2329/00

Abstract: In a flat panel display or other type of electron device, a thin-film electron emitter (51) and/or emitter array (50) is formed in a semiconductor film (10) of, for example, hydrogenated amorphous and/or microcrystalline Si, SiC.sub.x, SiN.sub.y, SiO.sub.x N.sub.y or the like. An injector electrode (14) forms a potential barrier (.phi..sub.B) with the semiconductor film (10) at a back major surface (12) of the film (10). A front electrode (15) serves for biasing an emission area (11a) of the front major surface (11) at a sufficiently positive potential (V.sub.15) with respect to the injector electrode (14) as to inject electrons (e) over the barrier (.phi..sub.B) in the operation of the emitter (51) while controlling the magnitude of an electron accumulation layer (Ne) in the semiconductor film (10) at the emission area (11a). Under this bias condition the semiconductor film (10) supports a depletion layer from the injector electrode (14) to the electron accumulation layer (Ne), so establishing a field in which the electrons are heated and directed towards the emission area (11a). The electron emission area is a plane surface area (11a) free of the front electrode (15), to which it may be connected directly or by a gateable connection (G,29). Some of the electrons from the injector electrode (14) are emitted at the emission area (11a), while others heat electrons in the accumulation layer (Ne) to stimulate their emission. The front electrode (15) extracts excess electrons not emitted from the emission area (11a). The emitter (51) is well suited for fabrication with thin-film silicon-based technology.

Abstract translation: 在平板显示器或其他类型的电子器件中，在例如氢化非晶和/或微晶硅的半导体膜（10）中形成薄膜电子发射体（51）和/或发射极阵列（50） ，SiC x，SiN y，SiO x N y等。 喷射器电极（14）在膜（10）的后表面（12）处形成具有半导体膜（10）的势垒（phi B）。 前电极（15）用于将前主表面（11）的发射区域（11a）相对于注射器电极（14）以足够的正电位（V15）偏置，以将电子（e）注入屏障 （51）的操作，同时控制在发射区域（11a）处的半导体膜（10）中的电子累积层（Ne）的大小。 在该偏压条件下，半导体膜（10）支撑从喷射器电极（14）到电子蓄积层（Ne）的耗尽层，从而建立电子被加热并被引向发射区域（11a）的场。 电子发射区域是没有前电极（15）的平面表面区域（11a），它可以直接连接到该平面表面区域（G，29）。 来自喷射器电极（14）的一些电子在发射区域（11a）处发射，而另一些电子在蓄积层（Ne）中加热，以刺激它们的发射。 前电极（15）提取不从发射区域（11a）发射的多余电子。 发射极（51）非常适合用薄膜硅基技术制造。

公开(公告)号：US5850087A

公开(公告)日：1998-12-15

申请号：US743590

申请日：1996-11-04

Applicant: Tom Van Zutphen

Inventor： Tom Van Zutphen

IPC: H01J1/304 ,  H01J1/308 ,  H01J29/04

CPC classification number: H01J29/04 ,  H01J1/308

Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structures (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant to damage during manufacture and use of a vacuum tube. The semiconductor zones (26, 27, 32, 33) are thus also utilized for realizing electron optics (particle optics).

Abstract translation: 通过提供具有额外的齐纳或雪崩结构（分别为26,27和32,33）的冷阴极（7）的半导体器件，获得了坚固的结构，其在真空管的制造和使用期间耐受损坏。 因此，半导体区域（26,27,32,33）也用于实现电子光学（粒子光学）。

公开(公告)号：US5811819A

公开(公告)日：1998-09-22

申请号：US568865

申请日：1995-12-05

Applicant: Takashi Ohshima ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

Inventor： Takashi Ohshima ,  Hiroyuki Shinada ,  Katsuhiro Kuroda

IPC: H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01J37/073 ,  H01J37/06

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

Abstract: An electron beam source is provided with an electron forming means such as a doped layer of Si for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided. An electron beam source apparatus and electron beam apparatus incorporating the electron beam source as defined above are also disclosed.

Abstract translation: 电子束源设置有诸如Si的掺杂层的电子形成装置，用于在抑制从价带发射电子的同时在针状结构的尖端的表面附近形成导带电子。 针状结构的尖端的表面由单晶半导体或绝缘体形成。 优选地，在针状结构的表面上形成表面钝化层和/或高掺杂层。 此外，也可以提供用于激发在价带中的电子的装置。 还公开了包含如上所述的电子束源的电子束源装置和电子束装置。

公开(公告)号：US5554859A

公开(公告)日：1996-09-10

申请号：US557678

申请日：1995-11-13

Applicant: Takeo Tsukamoto ,  Nobuo Watanabe ,  Toshihiko Takeda ,  Masahiko Okunuki

Inventor： Takeo Tsukamoto ,  Nobuo Watanabe ,  Toshihiko Takeda ,  Masahiko Okunuki

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J1/308 ,  H01J9/022

Abstract: This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range for causing an avalanche breakdown in a least a portion of a surface of the semiconductor layer. A Schottky electrode is connected to the semiconductor layer. There are a means for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schotty electrode to emit electrons, and a lead electrode, formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode is formed of a thin film of a material selected from metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group Group 3A, and lanthanoids, and metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness of the Schotty electrode is set to be not more than 100 .ANG..

Abstract translation: 这是具有半导体衬底的电子发射，其半导体衬底具有p型半导体层，其杂质浓度落在半导体层的表面的至少一部分中引起雪崩击穿的浓度范围内。 肖特基电极连接到半导体层。 存在在肖特基电极和p型半导体层之间施加反向偏置电压以使Schotty电极发射电子的装置和形成在适当位置的引线电极，用于外部引导发射的电子。 肖特基电极的至少一部分由选自组1A，组2A，组3A和镧系元素的金属的薄膜，组1A，组2A，组3A和镧系元素的金属硅化物形成，以及 第1A组，第2A组，第3A组和镧系金属硼化物，以及4A组金属碳化物。 将Schotty电极的膜厚设定为不超过100。