Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina
    141.
    发明申请
    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina 失效
    通过在薄型半导体层上构造支撑元件来形成器件的方法

    公开(公告)号:US20120220068A1

    公开(公告)日:2012-08-30

    申请号:US13450414

    申请日:2012-04-18

    CPC classification number: H01L31/1892 H01L31/0747 H01L31/1864 Y02E10/50

    Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

    Abstract translation: 描述了半导体组件,其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后,例如通过镀覆或通过施加前体和原位固化来形成支撑元件,得到支撑元件,其可以用于 例如,金属,陶瓷,聚合物等。这与预先形成的支撑元件形成对比,该预制形成的支撑元件在其形成之后固定到层板上,或者与施加器晶片相接触,该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中,该工艺流程允许薄层在高温下退火,然后在该退火之后具有在层的每个表面上形成的非晶硅层。

    LIGHT AMPLIFYING DEVICES FOR SURFACE ENHANCED RAMAN SPECTROSCOPY
    143.
    发明申请
    LIGHT AMPLIFYING DEVICES FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 有权
    用于表面增强拉曼光谱的光放大器件

    公开(公告)号:US20120113418A1

    公开(公告)日:2012-05-10

    申请号:US13383078

    申请日:2009-07-08

    CPC classification number: G01N21/658 B82Y20/00

    Abstract: A light amplifying device for surface enhanced Raman spectroscopy is disclosed herein. The device includes a dielectric layer having two opposed surfaces. A refractive index of the dielectric layer is higher than a refractive index of a material or environment directly adjacent thereto. At least one opening is formed in one of the two opposed surfaces of the dielectric layer, and at least one nano-antenna is established on the one of the two opposed surfaces of the dielectric layer. A gain region is positioned in the dielectric layer or adjacent to another of the two opposed surfaces of the dielectric layer.

    Abstract translation: 本文公开了一种用于表面增强拉曼光谱的光放大装置。 该装置包括具有两个相对表面的电介质层。 电介质层的折射率高于与其直接相邻的材料或环境的折射率。 至少一个开口形成在电介质层的两个相对表面之一中,并且至少一个纳米天线被建立在电介质层的两个相对表面之一上。 增益区域位于电介质层中或邻近电介质层的两个相对表面中的另一个。

    Method to form a device by constructing a support element on a thin semiconductor lamina
    144.
    发明授权
    Method to form a device by constructing a support element on a thin semiconductor lamina 有权
    通过在薄半导体层上构造支撑元件来形成器件的方法

    公开(公告)号:US08173452B1

    公开(公告)日:2012-05-08

    申请号:US12980424

    申请日:2010-12-29

    CPC classification number: H01L31/1892 H01L31/0747 H01L31/1864 Y02E10/50

    Abstract: A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

    Abstract translation: 描述了半导体组件,其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后,例如通过镀覆或通过施加前体和原位固化来形成支撑元件,得到支撑元件,其可以用于 例如,金属,陶瓷,聚合物等。这与刚性或半刚性的预成形支撑元件形成对比,该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上,或者与施加器晶片相接触,其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中,该工艺流程允许薄层在高温下退火,然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件,例如光伏电池。

    Optical devices for surface enhanced Raman spectroscopy
    145.
    发明授权
    Optical devices for surface enhanced Raman spectroscopy 失效
    用于表面增强拉曼光谱的光学器件

    公开(公告)号:US08134702B1

    公开(公告)日:2012-03-13

    申请号:US12574379

    申请日:2009-10-06

    CPC classification number: G01J3/44 G01N21/658 Y10T29/49865

    Abstract: An optical device for surface enhanced Raman spectroscopy includes a substrate, and at least one antenna established thereon. The at least one antenna including at least two segments, where each segment is formed of a metal having a predetermined volume and a predetermined contact angle with respect to the substrate. A gap is located between the two segments. The gap has a controllable size such that the at least one antenna resonates at a predetermined frequency that corresponds with the gap.

    Abstract translation: 用于表面增强拉曼光谱的光学装置包括衬底和建立在其上的至少一个天线。 所述至少一个天线包括至少两个段,其中每个段由具有预定体积的金属和相对于衬底的预定接触角形成。 两个部分之间有间隙。 间隙具有可控制的尺寸,使得至少一个天线以与间隙对应的预定频率谐振。

    MOLECULE DETECTION USING RAMAN LIGHT DETECTION
    147.
    发明申请
    MOLECULE DETECTION USING RAMAN LIGHT DETECTION 失效
    使用拉曼光检测的分子检测

    公开(公告)号:US20110188033A1

    公开(公告)日:2011-08-04

    申请号:US12696853

    申请日:2010-01-29

    CPC classification number: G01J3/44

    Abstract: An apparatus for detecting at least one molecule using Raman light detection includes a substrate for supporting a sample containing the at least one molecule, a laser source for emitting a laser beam to cause Raman light emission from the at least one molecule, a modulating element for modulating a spatial relationship between the laser beam and the substrate at an identified frequency to cause the Raman light to be emitted from the at least one molecule at the identified frequency, at least one detector for detecting the Raman light emitted from the at least one molecule, and a post-signal processing unit configured to process the detected Raman light emission at the identified frequency to detect the at least one molecule.

    Abstract translation: 用于使用拉曼光检测检测至少一个分子的装置包括用于支撑含有至少一个分子的样品的基底,用于发射激光束以产生来自至少一个分子的拉曼光发射的激光源, 以识别的频率调制激光束和衬底之间的空间关系,以使所述拉曼光以所识别的频率从所述至少一个分子发射;至少一个检测器,用于检测从所述至少一个分子发射的拉曼光 以及后信号处理单元,被配置为处理所识别的频率处的所检测的拉曼光发射以检测所述至少一个分子。

    Type selective and polarization selective device for Raman spectroscopy
    148.
    发明授权
    Type selective and polarization selective device for Raman spectroscopy 有权
    用于拉曼光谱的选择性和偏振选择性装置

    公开(公告)号:US07907275B2

    公开(公告)日:2011-03-15

    申请号:US12488318

    申请日:2009-06-19

    CPC classification number: G01J3/44 G01J3/02 G01J3/0224 G01N21/658

    Abstract: A type and polarization selective device for Raman spectroscopy includes a set of at least two antennas and a gap at their intersection. First antenna geometry is such that it is configured to resonate, for first or second (different from the first) polarization, at a predetermined stimulation frequency of a material for which Raman scattering is to be studied, or at a Stokes or anti-Stokes frequency corresponding with the material when excited at stimulation frequency. Second antenna geometry is such that it is configured to resonate, for the other of second or first polarization, at the Stokes frequency when the first antenna is configured to resonate at the stimulation or anti-Stokes frequency, or at the anti-Stokes frequency when the first antenna is configured to resonate at the stimulation or Stokes frequency, or at the stimulation frequency when the first antenna is configured to resonate at the Stokes or anti-Stokes frequency.

    Abstract translation: 用于拉曼光谱的类型和偏振选择装置包括至少两个天线的集合和它们的相交处的间隙。 第一天线几何形状使得其被配置为在要研究拉曼散射的材料的预定刺激频率下或在斯托克斯或反斯托克斯频率下谐振第一或第二(不同于第一极化)的极化 在刺激频率下激发时对应材料。 第二天线几何形状使得当第一天线被配置为以刺激或反斯托克斯频率或反斯托克斯频率谐振时,或者在反斯托克斯频率下,其被配置为在第二或第一极化中的另一个中以斯托克斯频率谐振, 第一天线被配置为在刺激或斯托克斯频率或刺激频率下谐振,当第一天线被配置为以斯托克斯或反斯托克斯频率谐振时。

    STRUCTURE FOR SURFACE ENHANCED RAMAN SPECTROSCOPY
    149.
    发明申请
    STRUCTURE FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 有权
    表面增强拉曼光谱的结构

    公开(公告)号:US20100253940A1

    公开(公告)日:2010-10-07

    申请号:US12416907

    申请日:2009-04-01

    CPC classification number: G01N21/658 G01N2021/058 Y10S977/712

    Abstract: A structure for surface enhanced Raman spectroscopy is disclosed herein. A substrate has a stack configured vertically thereon. The stack encompasses at least two metal layers and at least one dielectric layer therebetween. Each layer of the stack has a controlled thickness, and each of the at least two metal layers is configured to exhibit a predetermined characteristic of plasmonic resonance.

    Abstract translation: 本文公开了表面增强拉曼光谱的结构。 衬底具有垂直地配置的堆叠。 堆叠包括至少两个金属层和其间的至少一个电介质层。 堆叠的每个层具有受控的厚度,并且所述至少两个金属层中的每一个被配置为表现出等离子体共振的预定特性。

    MIXED-SCALE ELECTRONIC INTERFACES
    150.
    发明申请
    MIXED-SCALE ELECTRONIC INTERFACES 有权
    混合尺寸电子接口

    公开(公告)号:US20100197117A1

    公开(公告)日:2010-08-05

    申请号:US12761300

    申请日:2010-04-15

    Abstract: Certain embodiments of the present invention are directed to a method of programming nanowire-to-conductive element electrical connections. The method comprises: providing a substrate including a number of conductive elements overlaid with a first layer of nanowires, at least some of the conductive elements electrically coupled to more than one of the nanowires through individual switching junctions, each of the switching junctions configured in either a low-conductance state or a high-conductance state; and switching a portion of the switching junctions from the low-conductance state to the high-conductance state or the high-conductance state to the low-conductance state so that individual nanowires of the first layer of nanowires are electrically coupled to different conductive elements of the number of conductive elements using a different one of the switching junctions configured in the high-conductance state. Other embodiments of the present invention are directed to a nanowire structure including a mixed-scale interface.

    Abstract translation: 本发明的某些实施例涉及一种编程纳米线至导电元件电连接的方法。 该方法包括:提供包括多个覆盖有第一纳米线层的导电元件的衬底,至少一些导电元件通过单独的开关结与多于一个的纳米线电耦合,每个开关结配置在 低电导状态或高电导状态; 以及将所述开关结的一部分从所述低电导状态切换到所述高电导状态或所述高电导状态至所述低电导状态,使得所述第一纳米线层的单个纳米线电耦合到不同的导电元件 使用在高电导状态下配置的不同的一个开关结的导电元件的数量。 本发明的其它实施方案涉及包括混合规模界面的纳米线结构。

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