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    OTA-based current-mode filter and oscillator
    1.
    发明授权
    OTA-based current-mode filter and oscillator 有权
    基于OTA的电流模式滤波器和振荡器

    公开(公告)号：US08659363B2

    公开(公告)日：2014-02-25

    申请号：US13381977

    申请日：2010-12-01

    申请人： Dattaguru. V. Kamat ,  Ananda Mohan P. V. ,  Gopalakrishna Prabhu K

    发明人： Dattaguru. V. Kamat ,  Ananda Mohan P. V. ,  Gopalakrishna Prabhu K

    IPC分类号： H03B5/20

    CPC分类号： H03H11/0461 ,  H03F3/45475 ,  H03F2200/405 ,  H03H11/0433 ,  H03H11/32 ,  H03H11/486 ,  H03H11/50

    摘要： Techniques are generally described herein related to filters including first operational transconductance amplifier (first OTA) and a second operational transconductance amplifier (second OTA). In some examples described herein, the first OTA and second OTA have substantially the same transconductance. The first and second OTAs can be configured to realize filters such as first-order all-pass filters, second-order all-pass filters, higher-order all-pass filters, and quadrature oscillators.

    摘要翻译： 本文中通常描述的技术涉及包括第一操作跨导放大器（第一OTA）和第二操作跨导放大器（第二OTA）的滤波器。 在本文描述的一些示例中，第一OTA和第二OTA具有基本上相同的跨导。 第一和第二OTA可以被配置为实现诸如一阶全通滤波器，二阶全通滤波器，高阶全通滤波器和正交振荡器之类的滤波器。

    Method to form a device including an annealed lamina and having amorphous silicon on opposing faces
    2.
    发明授权
    Method to form a device including an annealed lamina and having amorphous silicon on opposing faces 有权
    形成包括退火薄片并在相对面上具有非晶硅的器件的方法

    公开(公告)号：US08101451B1

    公开(公告)日：2012-01-24

    申请号：US12980427

    申请日：2010-12-29

    申请人： Venkatesan Murali ,  Christopher J Petti ,  Theodore Smick ,  Mohamed M Hilali ,  Kathy J Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Venkatesan Murali ,  Christopher J Petti ,  Theodore Smick ,  Mohamed M Hilali ,  Kathy J Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L21/00 ,  H01L31/00

    CPC分类号： H01L21/187 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1824 ,  H01L31/1892 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。

    OTA-BASED CURRENT-MODE FILTER AND OSCILLATOR
    5.
    发明申请
    OTA-BASED CURRENT-MODE FILTER AND OSCILLATOR 有权
    基于OTA的电流模式滤波器和振荡器

    公开(公告)号：US20120161891A1

    公开(公告)日：2012-06-28

    申请号：US13381977

    申请日：2010-12-01

    申请人： Dattaguru. V. Kamat ,  Ananda Mohan P.V. ,  Gopalakrishna Prabhu K

    发明人： Dattaguru. V. Kamat ,  Ananda Mohan P.V. ,  Gopalakrishna Prabhu K

    IPC分类号： H03B5/08 ,  H03H11/04

    CPC分类号： H03H11/0461 ,  H03F3/45475 ,  H03F2200/405 ,  H03H11/0433 ,  H03H11/32 ,  H03H11/486 ,  H03H11/50

    摘要： Techniques are generally described herein related to filters including first operational transconductance amplifier (first OTA) and a second operational transconductance amplifier (second OTA). In some examples described herein, the first OTA and second OTA have substantially the same transconductance. The first and second OTAs can be configured to realize filters such as first-order all-pass filters, second-order all-pass filters, higher-order all-pass filters, and quadrature oscillators.

    摘要翻译： 本文中通常描述的技术涉及包括第一操作跨导放大器（第一OTA）和第二操作跨导放大器（第二OTA）的滤波器。 在本文描述的一些示例中，第一OTA和第二OTA具有基本上相同的跨导。 第一和第二OTA可以被配置为实现诸如一阶全通滤波器，二阶全通滤波器，高阶全通滤波器和正交振荡器之类的滤波器。

    MATERIALS FOR CHEMICAL MECHANICAL POLISHING
    6.
    发明申请
    MATERIALS FOR CHEMICAL MECHANICAL POLISHING 有权
    化学机械抛光材料

    公开(公告)号：US20070117500A1

    公开(公告)日：2007-05-24

    申请号：US11626014

    申请日：2007-01-23

    申请人： BENJAMIN BONNER ,  Peter Mcreynolds ,  Gregory Menk ,  Anand Iyer ,  Gopalakrishna Prabhu ,  Erik Rondum ,  Robert Jackson ,  Garlen Leung

    发明人： BENJAMIN BONNER ,  Peter Mcreynolds ,  Gregory Menk ,  Anand Iyer ,  Gopalakrishna Prabhu ,  Erik Rondum ,  Robert Jackson ,  Garlen Leung

    IPC分类号： B24D11/00

    CPC分类号： B24D11/00 ,  B24B7/228 ,  B24D2203/00

    摘要： A polishing article and method for manufacturing a polishing article for use in a chemical mechanical polishing process is disclosed. The polishing article has a plurality of polishing material tiles separated by grooves formed in or through a polishing material and may be adhesively bound to a base film. The polishing article may include various polygonal tiles and oval shapes formed in the polishing material which allow enhanced slurry retention and ease in rolling from a polishing material supply roll and onto a take-up roll in a web type platen assembly. The polishing article may also include an upper carrier film adapted to minimize delaminating stress placed in an area of the polishing article that is not adapted for polishing. A method and apparatus for manufacturing the various embodiments of the polishing article and a replacement supply roll are also disclosed.

    摘要翻译： 公开了一种用于制造用于化学机械抛光工艺的抛光制品的抛光制品和方法。 抛光制品具有由在抛光材料中或通过抛光材料形成的凹槽分开的多个抛光材料砖，并且可以粘合地结合到基膜上。 抛光制品可以包括在抛光材料中形成的各种多边形瓦片和椭圆形形状，其允许增强的浆料保持性并且容易地从研磨材料供给辊滚动到卷筒纸型压板组件中的卷取辊上。 抛光制品还可以包括适于最小化抛光制品的不适于抛光的区域中的分层应力的上载体薄膜。 还公开了用于制造抛光制品和替换供应辊的各种实施例的方法和装置。

    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina
    8.
    发明申请
    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina 失效
    通过在薄型半导体层上构造支撑元件来形成器件的方法

    公开(公告)号：US20120220068A1

    公开(公告)日：2012-08-30

    申请号：US13450414

    申请日：2012-04-18

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L31/0376 ,  H01L31/18

    CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。

    Method to form a device by constructing a support element on a thin semiconductor lamina
    9.
    发明授权
    Method to form a device by constructing a support element on a thin semiconductor lamina 有权
    通过在薄半导体层上构造支撑元件来形成器件的方法

    公开(公告)号：US08173452B1

    公开(公告)日：2012-05-08

    申请号：US12980424

    申请日：2010-12-29

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。