公开(公告)号：US20140287546A1

公开(公告)日：2014-09-25

申请号：US14299045

申请日：2014-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Junichiro Sakata ,  Yoshiharu Hirakata ,  Norihito Sone

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3244 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5048 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/52 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.

Abstract translation: 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。

公开(公告)号：US08772784B2

公开(公告)日：2014-07-08

申请号：US13772692

申请日：2013-02-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Masashi Tsubuku

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L29/12

CPC classification number: H01L33/0041 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.

Abstract translation: 增加在形成沟道的第一半导体层与源电极层与漏极电极层之间的界面处的接触电阻的因素之一是具有高电阻的膜，其由作为金属材料的金属材料的表面的灰尘或杂质污染形成 源极和漏极电极层。 作为解决方案，包括导电率小于或等于第一半导体层的导电率的第二半导体的第一保护层和第二保护层在不暴露于空气的情况下在源极和漏极电极层上依次层叠， 膜用于源电极层和漏电极层。

公开(公告)号：US08709847B2

公开(公告)日：2014-04-29

申请号：US13755614

申请日：2013-01-31

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L21/00

CPC classification number: H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

Abstract translation: 为了实现显示装置的操作功能的稳定性和电路设计中的设计余量的增加，在包括具有半导体元件的像素部分和设置有与基板上的半导体元件连接的像素电极的多个像素的显示装置中， 半导体元件包括作为层间绝缘膜的光敏有机树脂膜，设置在感光性有机树脂膜上的第一开口部的内壁面被第二绝缘氮化物膜覆盖，设置在无机绝缘膜上的第二开口部 设置在第一开口部的内侧，半导体和布线通过第一开口部和第二开口部连接，并且像素电极设置在活化层的下侧的层。

公开(公告)号：US08704222B2

公开(公告)日：2014-04-22

申请号：US13936257

申请日：2013-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/12

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: It is an object to provide a low-cost oxide semiconductor material which is excellent in controllability of the carrier concentration and stability, and to provide a field effect transistor including the oxide semiconductor material. An oxide including indium, silicon, and zinc is used as the oxide semiconductor material. Here, the content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. The field effect transistor including such an In—Si—Zn—O film can withstand heat treatment at a high temperature and is effective against −BT stress.

Abstract translation: 本发明的目的是提供一种低载体氧化物半导体材料，其具有优异的载流子浓度和稳定性的可控性，并且提供包括该氧化物半导体材料的场效应晶体管。 使用包含铟，硅和锌的氧化物作为氧化物半导体材料。 这里，氧化物半导体膜中的硅含量大于或等于4摩尔％且小于或等于8摩尔％。 包含这种In-Si-Zn-O膜的场效应晶体管可以承受高温下的热处理，对-BT应力有效。

公开(公告)号：US08633492B2

公开(公告)日：2014-01-21

申请号：US13688596

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L21/02

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

Abstract translation: 目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。 在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是 可以抑制切断电流的提高。

公开(公告)号：US12230638B2

公开(公告)日：2025-02-18

申请号：US18216963

申请日：2023-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/786

Abstract: A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

公开(公告)号：US12217767B2

公开(公告)日：2025-02-04

申请号：US17630090

申请日：2020-07-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Fumiya Nagashima ,  Kengo Akimoto ,  Tatsuya Okano ,  Yusuke Koumura ,  Seiko Inoue

IPC: G10L21/0272 ,  G10L25/30

Abstract: An audio device capable of inhibiting malfunction of an information terminal is provided. The audio device includes a sound sensor portion, a sound separation portion, a sound determination portion, and a processing portion. The sound sensor portion has a function of sensing sound. The sound separation portion has a function of separating the sound sensed by the sound sensor portion into a voice and sound other than a voice. The sound determination portion has a function of storing the feature quantity of the sound. The sound determination portion has a function of determining, with a machine learning model such as a neural network model, whether the feature quantity of the voice separated by the sound separation portion is the stored feature quantity. The processing portion has a function of analyzing an instruction contained in the voice and generating an instruction signal representing the content of the instruction in the case where the feature quantity of the voice is the stored feature quantity. The processing portion has a function of performing, on the sound other than a voice separated by the sound separation portion, processing for canceling the sound other than a voice. Specifically, the processing portion has a function of performing, on the sound other than a voice, processing for inverting the phase thereof.

公开(公告)号：US12142080B2

公开(公告)日：2024-11-12

申请号：US17778623

申请日：2020-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya Okano ,  Teppei Oguni ,  Kengo Akimoto

IPC: G06V10/74 ,  G06V10/762 ,  G06V10/82 ,  G06V40/16 ,  G06V40/20

Abstract: A data processing system that can sense fatigue or the like using a neural network is provided. First, a reference image is obtained on the basis of first to n-th images (n is an integer greater than or equal to 2). Next, the first to n-th images and the reference image are input to an input layer of a neural network, first to n-th estimated ages and a reference estimated age are output from an output layer, and first to n-th data and reference data are output from an intermediate layer. After that, first to n-th coordinates are obtained in each of which an x-coordinate is a value corresponding to a difference between the reference estimated age and the first to n-th estimated ages and a y-coordinate is a value corresponding to the degree of similarity between the reference data and the first to n-th data. Next, a query image is input to the input layer, a query estimated age is output from the output layer, query data is output from the intermediate layer, and query coordinates are obtained using the output results. Whether a person of a face included in the query image feels fatigue or the like is determined on the basis of the first to n-th coordinates and the query coordinates.

公开(公告)号：US12094884B2

公开(公告)日：2024-09-17

申请号：US18089708

申请日：2022-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC: H01L27/13 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

CPC classification number: H01L27/1225 ,  G02F1/13624 ,  H01L27/124 ,  H01L29/7869 ,  H10K59/131

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US12074210B2

公开(公告)日：2024-08-27

申请号：US17111838

申请日：2020-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/66 ,  H01L21/46 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.