公开(公告)号：US20070241655A1

公开(公告)日：2007-10-18

申请号：US10594904

申请日：2005-03-22

Applicant: Kazuto Sakemura ,  Saburo Aso ,  Koji Hanihara ,  Nobuyasu Negishi ,  Tomonari Nakada ,  Takamasa Yoshikawa

Inventor： Kazuto Sakemura ,  Saburo Aso ,  Koji Hanihara ,  Nobuyasu Negishi ,  Tomonari Nakada ,  Takamasa Yoshikawa

IPC: H01J1/02 ,  H01J9/00

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/127

Abstract: An electron emitting device having a lower electrode on a side near to a substrate and an upper electrode on a side remote from the substrate respectively, formed of a plurality of electron emitting elements remitting electrons from a side of the upper electrode side, wherein space is formed between the electron emitting elements, and the upper electrode extends across the plurality of electron emitting elements and the space by a bridging portion of the upper electrode.

Abstract translation: 一种电子发射器件，其在靠近衬底的一侧具有一个下部电极，而在远离该衬底的一侧分别具有一个上部电极，该多个电子发射元件从上部电极侧的一侧排出电子，其中的空间是 形成在电子发射元件之间，并且上电极通过上电极的桥接部分跨越多个电子发射元件和空间延伸。

公开(公告)号：US20070222067A1

公开(公告)日：2007-09-27

申请号：US11563776

申请日：2006-11-28

Applicant: Tsutomu Nanataki ,  Nobuyuki Kobayashi

Inventor： Tsutomu Nanataki ,  Nobuyuki Kobayashi

IPC: H01L23/48

CPC classification number: H01J1/312 ,  B82Y10/00 ,  C23C24/04 ,  H01J2329/00 ,  H01L41/1876 ,  H01L41/314 ,  Y02T50/67 ,  Y10T428/12021 ,  Y10T428/12458 ,  Y10T428/12479 ,  Y10T428/249961

Abstract: The dielectric device includes a substrate, a lower electrode, a dielectric layer, and an upper electrode. The lower electrode is bonded onto the substrate. The dielectric layer is bonded onto the lower electrode. The dielectric layer is obtained through thermal treatment of a film layer formed by spraying of a powdery dielectric material and a fine-particulate metal. In the thus-formed film layer, the metal is dispersed in the matrix of the dielectric material. Thermal treatment of the film layer causes migration of the metal in the film layer. This metal migration causes a lower-electrode-adjacent portion and upper-surface-adjacent portion of the dielectric layer to have different metal contents.

Abstract translation: 电介质器件包括衬底，下电极，电介质层和上电极。 下部电极接合在基板上。 电介质层结合在下电极上。 电介质层通过热处理通过喷涂粉末介电材料和细颗粒金属形成的膜层而获得。 在如此形成的膜层中，金属分散在电介质材料的基体中。 膜层的热处理导致膜层中的金属迁移。 这种金属迁移导致电介质层的下电极相邻部分和上表面相邻部分具有不同的金属含量。

公开(公告)号：US20070210697A1

公开(公告)日：2007-09-13

申请号：US11679968

申请日：2007-02-28

Applicant: Takuo Tamura ,  Yasushi Sano ,  Kazushi Miyata

Inventor： Takuo Tamura ,  Yasushi Sano ,  Kazushi Miyata

IPC: H01J1/62

CPC classification number: H01J29/30 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127

Abstract: Disclosed herein is an image display device including: plural pixels arranged two-dimensionally; and a thin film electron emitter that has a lower electrode formed of one of data lines, an electron acceleration layer formed by an anodic oxidation of a surface of the lower electrode, and an upper electrode stacked on the electron acceleration layer to emit electrons thereby provided in each of the plural pixels, in which a ratio of hydrate-alumina to the total of the hydrate-alumina and anhydrous-alumina contained in the electron acceleration layer (the anodic oxide film) arranged in each of the pixels in regulated in a range from 0.25 to 0.42.

Abstract translation: 本文公开了一种图像显示装置，包括：二维排列的多个像素; 以及薄膜电子发射体，其具有由数据线之一形成的下电极，通过下电极的表面的阳极氧化形成的电子加速层和堆叠在电子加速层上以发射电子的上电极，由此提供 在多个像素中的每一个中，其中水合物 - 氧化铝与排列在每个像素中的电子加速层（阳极氧化膜）中包含的水合物 - 氧化铝和无水 - 氧化铝的总量的比例调节在一个范围内 从0.25到0.42。

公开(公告)号：US20070182312A1

公开(公告)日：2007-08-09

申请号：US11672601

申请日：2007-02-08

Applicant: Masakazu Sagawa ,  Tatsumi Hirano ,  Hideyuki Shintani ,  Ken Okutani

Inventor： Masakazu Sagawa ,  Tatsumi Hirano ,  Hideyuki Shintani ,  Ken Okutani

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J1/312 ,  B82Y10/00

Abstract: In order too control the non-uniformity of electron emission amount within the surface or between adjacent pixels which is a cause for formation non-uniformity when forming, using anodization, an electron acceleration layer for an MIM type diode element which is appropriate for a thin film electron source, there is provided an insulation layer 12 which forms a MIM type diode element as a non-crystalline oxidized film which is formed by anodization of the surface of a lower electrode 11 with the formation of the lower electrode 11 as laminated layers which have a single layer film of aluminum or aluminum alloy or an outer layer of any of these, with a non-phosphor as a single layer film of aluminum or aluminum alloy which is anodized.

Abstract translation: 为了进一步控制表面或相邻像素之间的电子发射量的不均匀性，这是在使用阳极氧化形成MIM型二极管元件的电子加速层时形成不均匀的原因，其适用于薄 提供了形成作为非晶氧化膜的MIM型二极管元件的绝缘层12，其通过下电极11的表面的阳极氧化形成，形成下电极11作为层压层， 具有铝或铝合金的单层膜或其中任一种的外层，其中非磷光体作为阳极氧化的铝或铝合金的单层膜。

公开(公告)号：US20070138940A1

公开(公告)日：2007-06-21

申请号：US11543848

申请日：2006-10-06

Applicant: Chang-wook Moon ,  Sang-mock Lee ,  El Mostafa Bourim ,  Seung-woon Lee ,  Eun-hong Lee ,  Choong-rae Cho

Inventor： Chang-wook Moon ,  Sang-mock Lee ,  El Mostafa Bourim ,  Seung-woon Lee ,  Eun-hong Lee ,  Choong-rae Cho

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125

Abstract: Provided are a surface electron emission device and a display device having the same. The surface electron emission device may include a lower electrode, an insulating layer, and an upper electrode sequentially stacked, and a nano structure layer formed on the upper electrode.

Abstract translation: 提供一种表面电子发射装置和具有该表面电子发射装置的显示装置。 表面电子发射器件可以包括顺序堆叠的下电极，绝缘层和上电极，以及形成在上电极上的纳米结构层。

公开(公告)号：US07230371B2

公开(公告)日：2007-06-12

申请号：US11083052

申请日：2005-03-17

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J63/08 ,  H01J2201/306

Abstract: A light source has a rear glass substrate and a front glass substrate having a plate surface disposed in facing relation to a principal surface of the rear glass substrate. The plate surface of the front glass substrate is coated with a phosphor. A two-dimensional array of electron emitters is disposed on the principal surface of the rear glass substrate. A space defined between the rear glass substrate and the front glass substrate is filled with a gas. The gas may be an Hg (mercury) gas or an Xe (xenon) gas.

Abstract translation: 光源具有后玻璃基板和具有与后玻璃基板的主面相对配置的板面的前玻璃基板。 前面玻璃基板的板表面涂有磷光体。 电子发射体的二维阵列设置在后玻璃基板的主表面上。 在后玻璃基板和前玻璃基板之间限定的空间填充有气体。 气体可以是Hg（汞）气体或Xe（氙气）气体。

公开(公告)号：US07170223B2

公开(公告)日：2007-01-30

申请号：US10197722

申请日：2002-07-17

Applicant: James Denning Smith ,  Paul Benning

Inventor： James Denning Smith ,  Paul Benning

IPC: H01J1/62

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/027

Abstract: An emitter has a dielectric layer formed on a conductor, with a thin metal layer over the dielectric. A plurality of conducting centers is in the dielectric layer to allow electrons to pass through the dielectric from the conductor to the thin metal layer via quantum tunneling.

Abstract translation: 发射极具有在导体上形成的电介质层，在电介质上具有薄的金属层。 多个导电中心位于电介质层中，以允许电子经由量子隧道从导体通过电介质到薄金属层。

公开(公告)号：US20060290255A1

公开(公告)日：2006-12-28

申请号：US11471938

申请日：2006-06-21

Applicant: Hirofumi Yamaguchi ,  Kei Sato

Inventor： Hirofumi Yamaguchi ,  Kei Sato

IPC: H01J9/02

CPC classification number: H01J1/32 ,  H01J1/312 ,  H01J2201/3125

Abstract: A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

Abstract translation: 电介质膜型电子发射器包括发射极部分，第一电极和第二电极。 发射极部分由多晶电介质材料的薄层形成。 构成发射极部的介电材料由具有高机械品质因数（Qm）的材料形成。 具体地说，介电材料的Qm高于所谓的低Qm材料（Qm为100以下的材料）。 电介质材料的Qm优选为300以上，更优选为500以上。

公开(公告)号：US07091054B2

公开(公告)日：2006-08-15

申请号：US11057469

申请日：2005-02-15

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: H01L21/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract translation: 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

公开(公告)号：US20060113608A1

公开(公告)日：2006-06-01

申请号：US11289012

申请日：2005-11-29

Applicant: Iwao Ohwada ,  Masao Takahashi ,  Takayoshi Akao ,  Shuichi Ozawa ,  Kei Kosaka

Inventor： Iwao Ohwada ,  Masao Takahashi ,  Takayoshi Akao ,  Shuichi Ozawa ,  Kei Kosaka

IPC: H01L29/76

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/32 ,  H01J31/127

Abstract: An electron-emitting device includes an emitter section composed of a dielectric material, a lower electrode disposed on the lower side of the emitter section, and an upper electrode disposed on the upper side of the emitter section so as to be opposed to the lower electrode with the emitter section therebetween, electrons being emitted from the emitter section through the upper electrode by the application of a drive voltage between the lower electrode and the upper electrode, wherein the upper electrode is provided with a plurality of through-holes which expose the emitter section and which have an average diameter of 10 nm or more and less than 100 nm, and a peripheral portion of each through-hole facing the emitter section is separated at a predetermined distance from the emitter section.