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    Electron tube comprising a semiconductor cathode
    141.
    发明授权
    Electron tube comprising a semiconductor cathode 失效
    包括半导体阴极的电子管

    公开(公告)号：US5444328A

    公开(公告)日：1995-08-22

    申请号：US152563

    申请日：1993-11-12

    Applicant: Tom Van Zutphen

    Inventor： Tom Van Zutphen

    IPC: H01J1/304 ,  H01J1/308 ,  H01J29/04

    CPC classification number: H01J29/04 ,  H01J1/308

    Abstract: By providing a semiconductor device such as a cold cathode (7) with extra zener or avalanche structure (26, 27 and 32, 33, respectively) a robust structure is obtained which is resistant damage from, e.g., flashoners, during manufacture and use in a vacuum tube. The semiconductor zones (24, 27, 32, 33) are also utilized as electron sources.

    Abstract translation: 通过提供具有额外的齐纳或雪崩结构（分别为26,27和32,33）的冷阴极（7）的半导体器件，获得了坚固的结构，其在例如制造和使用期间来自例如闪光灯的耐受损伤 一个真空管。 半导体区域（24,27,32,33）也被用作电子源。

    Semiconductor cathode with increased stability
    142.
    发明授权
    Semiconductor cathode with increased stability 失效
    半导体阴极增加稳定性

    公开(公告)号：US4890031A

    公开(公告)日：1989-12-26

    申请号：US298819

    申请日：1989-01-18

    Applicant: Jan Zwier

    Inventor： Jan Zwier

    IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/12

    CPC classification number: H01J1/308

    Abstract: The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns by means of separate emission regions, whose overall surface area is much smaller than that of the actual emission patter. Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained.

    Abstract translation: 半导体阴极的稳定性通过降低有效发射表面积而得到改善。 这是通过分开的发射区域产生发射模式来实现的，它们的总体表面积远远小于实际发射模式的发射区域。 由于较高的发射电流和调节电流，不利地影响发射稳定性的吸附颗粒被迅速排出。

    Semiconductor device having a cold cathode
    146.
    发明授权
    Semiconductor device having a cold cathode 失效
    具有冷阴极的半导体器件

    公开(公告)号：US4766340A

    公开(公告)日：1988-08-23

    申请号：US21564

    申请日：1987-03-02

    Applicant: Karel D. van der Mast ,  Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    Inventor： Karel D. van der Mast ,  Arthur M. E. Hoeberechts ,  Gerardus G. P. van Gorkom

    IPC: H01J29/04 ,  H01J1/308 ,  H01J31/12 ,  H01J31/38 ,  H01J37/073 ,  H01L31/00

    CPC classification number: H01J1/308

    Abstract: In a semiconductor cathode, the electron-emitting part of a pn junction is provided in the tip of a projecting portion of the semiconductor surface which is situated within an opening in an insulating layer on which an acceleration electrode is disposed. Due to the increased electric field near the tip, a reduction of the work function (Schottky effect) is obtained. As a result, cathodes can be realized in which a material reducing the work function, such as caesium, may be either dispensed with or replaced, if required, by another material, which causes lower work function, but is less volatile. The field strength remains so low that no field emission occurs and serarate cathodes can be driven individually, which is favorable for applications in electron microscopy and electron lithography.

    Abstract translation: 在半导体阴极中，pn结的电子发射部分设置在半导体表面的突出部分的尖端中，半导体表面的突出部分位于设置有加速电极的绝缘层中的开口内。 由于尖端附近的电场增加，可以获得功函数（肖特基效应）的降低。 结果，可以实现阴极，其中如果需要，可以通过另一种材料来省去或替换诸如铯的功能降低功函数，这导致较低的功函数，但是较不易挥发。 场强保持如此之低，不会发生场发射，可以单独驱动平均阴极，这有利于电子显微镜和电子光刻中的应用。

    Electron sources and equipment having electron sources
    147.
    发明授权
    Electron sources and equipment having electron sources 失效
    具有电子源的电子源和设备

    公开(公告)号：US4516146A

    公开(公告)日：1985-05-07

    申请号：US439144

    申请日：1982-11-04

    Applicant: John M. Shannon ,  Arthur M. E. Hoeberechts ,  Gerardus G. P. Van Gorkom

    Inventor： John M. Shannon ,  Arthur M. E. Hoeberechts ,  Gerardus G. P. Van Gorkom

    IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J37/305 ,  H01L49/00 ,  H01L29/34

    CPC classification number: H01J1/308

    Abstract: An electron source having a rapid response time comprises at least one n-p-n structure (and possibly an array of said n-p-n structure) formed in a silicon or other semiconductor body (10) by a p-type first region (1) between n-type second and third regions (2 and 3). Electrons (24) are generated in the n-p-n structure (2,1,3) for emission into free space (20) from a surface area (4) of the body (10) after flowing from the second region (2) through the first and third regions (1 and 3). The n-p-n structure (2,1,3) has electrode connections (12 and 13) only to the n-type second and third regions (2 and 3). The first region (1) provides a barrier region restricting the flow of electrons from the second region (2) to the third region (3) until a potential difference (V) is applied between the electrode connections (12 and 13) to bias the third region (3) positive with respect to the second region (2) and to establish a supply of hot electrons (24) injected into the third region (3) with sufficient energy to overcome the potential barrier present between the surface area (4) and free space (20). The barrier region (1) forms depletion layers with both the n-type second and third regions (2 and b 3) and is depleted of holes by the merging together of these depletion layers at least when the potential difference (V) is applied to establish said supply of hot electrons (24). The n-p-n structure can be provided in a mesa portion (9) of the body (10) at a window in an insulating layer (11) so as to form a compact arrangement having very low associated capacitances. The electron sources may be used in cathode-ray tubes, display devices and even electron lithography equipment.

    Abstract translation: 具有快速响应时间的电子源包括通过p型第一区域（1）在n型第二区域（1）中形成于硅或其它半导体本体（10）中的至少一个npn结构（以及可能的所述npn结构的阵列） 和第三区域（2和3）。 在npn结构（2,1,3）中产生电子（24），用于在从第二区域（2）流过第一区域（2）之后从主体（10）的表面区域（4）发射到自由空间（20） 和第三区域（1和3）。 n-p-n结构（2,1,3）仅具有到n型第二和第三区域（2和3）的电极连接（12和13）。 第一区域（1）提供限制从第二区域（2）到第三区域（3）的电子流动的势垒区域，直到在电极连接件（12和13）之间施加电位差（V） 第三区域（3）相对于第二区域（2）是正的，并以足够的能量建立注入到第三区域（3）中的热电子（24）的供应，以克服存在于表面区域（4） 和自由空间（20）。 阻挡区域（1）形成具有n型第二和第三区域（2和b 3）的耗尽层，并且通过将这些耗尽层合并在一起，至少当电位差（V）被施加到 建立热电子供应（24）。 n-p-n结构可以在绝缘层（11）中的窗口处设置在主体（10）的台面部分（9）中，以形成具有非常低的相关电容的紧凑布置。 电子源可以用于阴极射线管，显示装置甚至电子光刻设备中。

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