Abstract:
Techniques for handling multicast over link aggregated (LAG) interfaces and integrated routing and bridging (IRB) interfaces in a network device are described in which interfaces, at which a data unit is to be transmitted, may be represented hierarchically in which the LAG interfaces and IRB interfaces are represented as pointers. In one implementation, a device may determine routes for data units, where a route for a multicast data unit is represented as a set of interfaces of the device at which the data unit is to be output. Entries in the set of interfaces may include physical interfaces of the device and pointers to LAG interfaces or pointers to the IRB interfaces. The device may generate tokens to represent routes for data units and resolve the pointers to the LAG interfaces or the IRB interfaces to obtain physical interfaces of the router corresponding to a LAG or an IRB.
Abstract:
A network device provides a selector list that includes indices of child nexthops associated with the network device, where each of the child nexthops is associated with a corresponding child link provided in an aggregated bundle of child links. The network device also receives an indication of a failure of a child link in the aggregated bundle of child links, and removes, from the selector list, an index of a child nexthop associated with the failed child link. The network device further receives probabilities associated with the child links of the aggregated bundle of child links. Each of the probabilities indicates a probability of a packet exiting the network device on a child link. The network device also creates a distribution table based on the probabilities associated with the child links, and rearranges values provided in the distribution table.
Abstract:
A lamp driver circuit to selectively energize one or more lamps is provided. The inverter circuit has a transformer with primary and secondary windings to provide voltage to the lamps. A filter is connected to the primary winding to receive a primary winding signal representative of the voltage across the primary winding. The primary winding signal has a frequency spectrum and the filter detects a particular characteristic of the frequency spectrum that is indicative of an end of life (EOL) condition of the one or more lamps. A control circuit is connected to the inverter circuit and to the filter. The control circuit is configured to discontinue energizing of the one or more lamps by the inverter circuit when the particular characteristic of the frequency spectrum of the primary winding signal is detected by the filter.
Abstract:
A ballast for driving one or more lamps includes a controller and a current reduction circuit for accelerating a controller reset. Upon detecting a fault, the controller disables the ballast for a preset period of time, and resets. The controller additionally resets when the ratio of a supplied second value to a supplied first value falls below a threshold value. The current reduction circuit reduces the supplied second value in less than the preset period of time, such that the ratio falls below the threshold value and the controller resets. An emergency lighting system includes the ballast as a primary ballast, a backup ballast, and a primary power source. The controller detects a fault if the primary power source de-energizes and the backup ballast disconnects the one or more lamps from the primary ballast. The current reduction circuit accelerates the reset of the controller when the primary power source de-energizes.
Abstract:
Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.
Abstract:
Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract:
A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.
Abstract:
Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.