METHOD FOR EVALUATING ANTI-INFECTIVE DRUGS, VACCINES, ETC. USING IMMORTALIZED MONOCYTIC CELLS AND INDUCED CELLS

    公开(公告)号:US20210277361A1

    公开(公告)日:2021-09-09

    申请号:US17271902

    申请日:2019-08-26

    Abstract: The present invention has been made in view of a problem regarding stability, reproducibility, economy, and easiness of operation in studies for a monocyte- or dendritic cell-mediated infectious microorganism, and is directed to provide a method for maintenance culturing a monocyte- or dendritic cell-mediated infectious microorganism utilizing a monocyte having a proliferative capacity. The present invention is based on the finding that a dengue virus efficiently infects a proliferable human monocytic cell obtained by introducing a gene into a CD14-positive cell and a cell having a phagocytic capacity obtained by inducing the monocytic cell to differentiate (e.g., dendritic cell) and proliferates therein. Thus, provided is a novel method for evaluating a pharmaceutical such as a compound or a vaccine for treating an infection with a monocyte- or dendritic cell-mediated infectious microorganism.

    NITRIDE CRYSTAL, OPTICAL DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE CRYSTAL

    公开(公告)号:US20210273057A1

    公开(公告)日:2021-09-02

    申请号:US17141273

    申请日:2021-01-05

    Abstract: According to one embodiment, a nitride crystal includes first, second, and third nitride crystal regions. The third nitride crystal region includes Al, and is provided between the first and second nitride crystal regions. A third oxygen concentration in the third nitride crystal region is greater than a first oxygen concentration in the first nitride crystal region and greater than a second oxygen concentration in the second nitride crystal region. A third carbon concentration in the third nitride crystal region is greater than a first carbon concentration in the first nitride crystal region and greater than a second carbon concentration in the second nitride crystal region. A direction of the first nitride crystal region is one of a first orientation from the second nitride crystal region toward the first nitride crystal region or a second orientation from the first nitride crystal region toward the second nitride crystal region.

    Method and system for predicting shape of human body after treatment

    公开(公告)号:US11065084B2

    公开(公告)日:2021-07-20

    申请号:US15770461

    申请日:2016-10-21

    Abstract: To have convenient and highly precise prediction of the shape of a human body after a treatment by calculation processing that includes extracting a feature vector Fnew from face data of a patient as an evaluation subject, selecting a plurality of case patients having feature vectors Fpre(i), extracted from the face data of a plurality of previous patients, obtaining pre-orthodontic facial shape models Hpre(i) and a post-orthodontic facial shape models Hpost(i) in which the faces of the selected previous case patients before and after a treatment have been normalized, obtaining a facial shape model Hnew, and obtaining a three-dimensional predicted facial shape model Hprd, by modifying the facial shape model Hnew of the patient as an evaluation subject, using a vector average difference AVEpost−AVEpre between the pre-treatment and post-treatment facial shape models.

    RESIST PATTERN FORMATION METHOD
    159.
    发明申请

    公开(公告)号:US20210216016A1

    公开(公告)日:2021-07-15

    申请号:US17251722

    申请日:2019-06-14

    Inventor: Seiichi TAGAWA

    Abstract: A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1

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